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    Semiconductor isolation structure and manufacturing method thereof
    2.
    发明授权
    Semiconductor isolation structure and manufacturing method thereof 有权
    半导体隔离结构及其制造方法

    公开(公告)号：US09484376B2

    公开(公告)日：2016-11-01

    申请号：US14291512

    申请日：2014-05-30

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Yu-Yi Wang ,  Keng-Ying Liao ,  Po-Zen Chen ,  Yi-Hung Chen

    IPC: H01L31/02 ,  H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

    Abstract: The present disclosure provides a method for manufacturing a semiconductor isolation structure, including providing a substrate with a top surface; forming a patterned mask over the top surface; forming a trench through the patterned mask in the substrate by a directional etch comprising nitrogen-containing substance, wherein an aspect ratio of the trench is formed to be greater than about 18, and a ratio of a width of a narrowest portion and a width of a widest portion of the isolation region is formed to be greater than about 0.7; and filling the trench with insulating materials. The present disclosure also provides an image sensing device, including a radiation sensing region with a first isolation region separating adjacent radiation detecting units and a peripheral region, wherein an aspect ratio of the first isolation region is greater than about 18.

    Abstract translation: 本公开提供了一种用于制造半导体隔离结构的方法，包括提供具有顶表面的基板; 在顶表面上形成图案化掩模; 通过包含含氮物质的定向蚀刻在衬底中形成通过图案化掩模的沟槽，其中沟槽的纵横比形成为大于约18，并且最窄部分的宽度与宽度之比 隔离区域的最宽部分形成为大于约0.7; 并用绝缘材料填充沟槽。 本公开还提供了一种图像感测装置，其包括具有分隔相邻辐射检测单元的第一隔离区域和周边区域的辐射感测区域，其中第一隔离区域的纵横比大于约18。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220077217A1

    公开(公告)日：2022-03-10

    申请号：US17525968

    申请日：2021-11-15

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yu-Chien Ku ,  Huai-Jen Tung ,  Keng-Ying Liao ,  Yi-Hung Chen ,  Shih-Hsun Hsu ,  Yi-Fang Yang

    IPC: H01L27/146 ,  H01L23/00

    Abstract: A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.

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