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公开(公告)号：US20200274511A1
公开(公告)日：2020-08-27
申请号：US16874067
申请日：2020-05-14
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE
Abstract: Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
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公开(公告)号：US20180315535A1
公开(公告)日：2018-11-01
申请号：US15962286
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Junichiro URABE , Tsuyoshi SUZUKI , Atsushi SHIMURA
CPC classification number: H01F10/329 , G11C11/02 , G11C11/15 , G11C11/16 , G11C11/1673 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01P1/218 , H03H2/00 , H03H11/04
Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
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公开(公告)号：US20180159492A1
公开(公告)日：2018-06-07
申请号：US15870243
申请日：2018-01-12
Applicant: TDK CORPORATION
Inventor： Tetsuya SHIBATA , Junichiro URABE , Atsushi SHIMURA , Takekazu YAMANE
CPC classification number: H03H1/0007 , H01L43/00 , H01L43/08 , H03H2/00 , H03H2001/0057 , H03H2001/0085
Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.
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公开(公告)号：US20180040666A1
公开(公告)日：2018-02-08
申请号：US15662697
申请日：2017-07-28
Applicant: TDK CORPORATION
Inventor： Tetsuya SHIBATA , Tsuyoshi SUZUKI , Junichiro URABE , Takekazu YAMANE , Atsushi SHIMURA
CPC classification number: H01L27/22 , G11B5/3903 , G11B5/3945 , H01L43/02 , H01L43/08 , H03H1/0007 , H03H2/00 , H03H7/0153
Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.
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公开(公告)号：US20170244377A1
公开(公告)日：2017-08-24
申请号：US15439640
申请日：2017-02-22
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Tetsuya SHIBATA , Junichiro URABE , Atsushi SHIMURA
Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.
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Patent Agency Ranking
公开(公告)号：US20220231181A1
公开(公告)日：2022-07-21
申请号：US17576467
申请日：2022-01-14
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Tomohito MIZUNO
Abstract: A photodetection element includes a magnetic element including a first ferromagnetic layer to which light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first electrode in contact with a first surface of the magnetic element, the first surface being located on a first ferromagnetic layer side of the magnetic element in a lamination direction; a second electrode in contact with a second surface of the magnetic element, the second surface being opposite to the first surface; and a first high thermal conductivity layer disposed outside of the first ferromagnetic layer and having higher thermal conductivity than the first electrode.
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公开(公告)号：US20220131020A1
公开(公告)日：2022-04-28
申请号：US17509730
申请日：2021-10-25
Applicant: TDK CORPORATION
Inventor： Tomohito MIZUNO , Takekazu YAMANE , Hideaki FUKUZAWA , Tetsuya SHIBATA
IPC: H01L31/0224 , H01L27/146 , H04B10/50 , H04B10/69 , H04B10/114
Abstract: An electrode structure includes: a metal film with an opening formed in a part of the metal film; and a transparent conductive film disposed in the opening, wherein the transparent conductive film is electronically connected to an element and overlaps with the element as viewed in a plan view in a thickness direction of the transparent conductive film.
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公开(公告)号：US20190044500A1
公开(公告)日：2019-02-07
申请号：US16048034
申请日：2018-07-27
Applicant: TDK CORPORATION
Inventor： Naomichi DEGAWA , Takekazu YAMANE
CPC classification number: H03H11/04 , H01F10/3286 , H01F10/329 , H03F15/00 , H03H2/00 , H03H11/16
Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
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公开(公告)号：US20180277749A1
公开(公告)日：2018-09-27
申请号：US15764848
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro URABE , Tetsuya SHIBATA , Atsushi SHIMURA , Takekazu YAMANE , Tsuyoshi SUZUKI
CPC classification number: H01L43/08 , H01F10/325 , H01F10/3254 , H01F10/329 , H01F10/3295 , H01L27/22 , H01L43/02 , H03H2/00 , H03H11/04
Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
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公开(公告)号：US20170345449A1
公开(公告)日：2017-11-30
申请号：US15600066
申请日：2017-05-19
Applicant: TDK CORPORATION
Inventor： Tetsuya SHIBATA , Junichiro URABE , Takekazu YAMANE , Tsuyoshi SUZUKI
IPC: G11B5/39
CPC classification number: H03H2/00 , G01R33/00 , G01R33/093 , G01R33/1284 , G11B5/3945 , H01L43/00
Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.
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