TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-IN MEMORY

    公开(公告)号:US20190214549A1

    公开(公告)日:2019-07-11

    申请号:US16082913

    申请日:2017-11-08

    CPC classification number: H01L43/08 G11C11/161 H01L27/222 H01L43/02 H01L43/10

    Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that is disposed on a side surface of the magnetic tunnel junction, a cap layer that covers a top surface of the magnetic tunnel junction and a surface of the side wall portion, and an upper electrode layer that is disposed on the cap layer. The cap layer includes an upper surface and a lower surface. The upper surface has a protruding shape that protrudes in a direction away from the magnetic tunnel junction in a first region which is positioned immediately above the top surface of the magnetic tunnel junction. The upper surface has a recess that is recessed in a direction toward the side wall portion in a second region which is positioned immediately above the surface of the side wall portion.

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