公开(公告)号：US20210403323A1

公开(公告)日：2021-12-30

申请号：US17357232

申请日：2021-06-24

Applicant: TOKUYAMA CORPORATION

Inventor： Takayuki NEGISHI ,  Takafumi SHIMODA ,  Akihiro SAITO ,  Naoki MATSUDA ,  Kenichi KAKIZONO ,  Takeshi KAWANO ,  Masayuki MORIWAKI

IPC: C01B11/06 ,  B01F5/06

Abstract: The present invention provides industrially advantageous production method and production apparatus, with respect to production of a halogen oxyacid solution. There is solved by a method for producing a halogen oxyacid solution, comprising continuously supplying an organic alkaline solution and halogen to a static mixer and mixing them, to thereby continuously obtain a halogen oxyacid generated.

公开(公告)号：US20210155878A1

公开(公告)日：2021-05-27

申请号：US16953754

申请日：2020-11-20

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: C11D3/395 ,  C11D11/00 ,  C07C209/68 ,  H01L21/02 ,  B08B3/08

Abstract: Provided is a method of producing a quatenary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

公开(公告)号：US20240014045A1

公开(公告)日：2024-01-11

申请号：US18019942

申请日：2021-08-06

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: Provided is a treatment liquid for treating a semiconductor wafer in a semiconductor forming process, the treatment liquid containing (A) a hypobromite ion, (B) a pH buffer, and (C) an onium ion represented by formula (1):




(wherein R1, R2, R3, and R4 each independently denote an alkyl group having carbon number from 1 to 25,)

公开(公告)号：US20230126771A1

公开(公告)日：2023-04-27

申请号：US17915697

申请日：2021-03-31

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C09K13/00 ,  H01L21/3213

Abstract: A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.

公开(公告)号：US20220356061A1

公开(公告)日：2022-11-10

申请号：US17618762

申请日：2021-04-16

Applicant: TOKUYAMA CORPORATION

Inventor： Takayuki NEGISHI ,  Takafumi SHIMODA ,  Akihiro SAITO ,  Naoki MATSUDA ,  Masayuki MORIWAKI

IPC: C01B11/04 ,  C07C209/68

Abstract: A method for producing halogen oxyacid, which includes a step of continuously supplying and mixing an organic alkali solution and a halogen and continuously collecting a reaction solution containing halogen oxyacid, and an production apparatus of halogen oxyacid, which includes a reactor, a means of supplying an organic alkali solution to the reactor, a means of supplying a halogen to the reactor, and a means of collecting a reaction solution for taking out the reaction solution from the reactor, in which the organic alkali solution and the halogen are continuously supplied by the means of supplying an organic alkali solution and the means of supplying a halogen, respectively, to the reactor so as to be mixed therein such that a solution containing halogen oxyacid is generated as a reaction solution, and the reaction solution is continuously collected by the means of collecting a reaction solution are provided.

公开(公告)号：US20210388508A1

公开(公告)日：2021-12-16

申请号：US17261387

申请日：2020-07-08

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C23F1/40 ,  H01L21/306

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.