公开(公告)号：USRE46785E1

公开(公告)日：2018-04-10

申请号：US14992650

申请日：2016-01-11

申请人： TOSHIBA MEMORY CORPORATION

发明人： Ryota Katsumata ,  Hideaki Aochi ,  Hiroyasu Tanaka ,  Masaru Kito ,  Yoshiaki Fukuzumi ,  Masaru Kidoh ,  Yosuke Komori ,  Megumi Ishiduki ,  Junya Matsunami ,  Tomoko Fujiwara ,  Ryouhei Kirisawa ,  Yoshimasa Mikajiri ,  Shigeto Oota

IPC分类号： G11C11/14 ,  H01L27/11578 ,  G11C16/06 ,  H01L27/11582 ,  G11C16/04 ,  H01L27/11565

CPC分类号： H01L27/11578 ,  G11C16/0466 ,  G11C16/06 ,  H01L27/11565 ,  H01L27/11582

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.