公开(公告)号：US20230317664A1

公开(公告)日：2023-10-05

申请号：US18330616

申请日：2023-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L23/48 ,  H01L23/538

CPC classification number: H01L24/20 ,  H01L23/293 ,  H01L23/3142 ,  H01L23/3135 ,  H01L25/0655 ,  H01L21/56 ,  H01L23/481 ,  H01L24/13 ,  H01L23/5384 ,  H01L2924/37001 ,  H01L2224/2101 ,  H01L2924/35121

Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

公开(公告)号：US20200083189A1

公开(公告)日：2020-03-12

申请号：US16413591

申请日：2019-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Po-Han Wang ,  Yung-Chi Chu ,  Hung-Chun Cho

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L21/683 ,  C09J165/00

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a patterned conductive layer, a dielectric layer, and an inter-layer film. The dielectric layer is disposed on the patterned conductive layer. The inter-layer film is sandwiched between the dielectric layer and the patterned conductive layer, and the patterned conductive layer is separated from the dielectric layer through the inter-layer film.

公开(公告)号：US20240395757A1

公开(公告)日：2024-11-28

申请号：US18791201

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US11605607B2

公开(公告)日：2023-03-14

申请号：US17206442

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L25/18 ,  H01L23/29 ,  H01L21/56

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US20220302065A1

公开(公告)日：2022-09-22

申请号：US17206442

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L25/18 ,  H01L25/065 ,  H01L25/00

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US11270927B2

公开(公告)日：2022-03-08

申请号：US16547590

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Wei-Chih Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

Abstract: A package structure and method of forming the same are provided. The package structure includes a die, a TIV, an encapsulant, an adhesion promoter layer, a RDL structure and a conductive terminal. The TIV is laterally aside the die. The encapsulant laterally encapsulates the die and the TIV. The adhesion promoter layer is sandwiched between the TIV and the encapsulant. The RDL structure is electrically connected to the die and the TIV. The conductive terminal is electrically connected to the die through the RDL structure.