公开(公告)号：US20240297140A1

公开(公告)日：2024-09-05

申请号：US18656277

申请日：2024-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/13 ,  H01L25/0655 ,  H01L2224/2101 ,  H01L2924/35121 ,  H01L2924/37001

Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

公开(公告)号：US20230215831A1

公开(公告)日：2023-07-06

申请号：US18182470

申请日：2023-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L25/18 ,  H01L23/29

CPC classification number: H01L24/20 ,  H01L25/0652 ,  H01L25/50 ,  H01L24/19 ,  H01L24/82 ,  H01L24/96 ,  H01L25/18 ,  H01L23/296 ,  H01L23/295 ,  H01L21/561

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US11164839B2

公开(公告)日：2021-11-02

申请号：US16413591

申请日：2019-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Po-Han Wang ,  Yung-Chi Chu ,  Hung-Chun Cho

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L21/683 ,  C09J165/00

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a patterned conductive layer, a dielectric layer, and an inter-layer film. The dielectric layer is disposed on the patterned conductive layer. The inter-layer film is sandwiched between the dielectric layer and the patterned conductive layer, and the patterned conductive layer is separated from the dielectric layer through the inter-layer film.

公开(公告)号：US20210057308A1

公开(公告)日：2021-02-25

申请号：US16547590

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Wei-Chih Chen

IPC: H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00

Abstract: A package structure and method of forming the same are provided. The package structure includes a die, a TIV, an encapsulant, an adhesion promoter layer, a RDL structure and a conductive terminal. The TIV is laterally aside the die. The encapsulant laterally encapsulates the die and the TIV. The adhesion promoter layer is sandwiched between the TIV and the encapsulant. The RDL structure is electrically connected to the die and the TIV. The conductive terminal is electrically connected to the die through the RDL structure.

公开(公告)号：US12249588B2

公开(公告)日：2025-03-11

申请号：US18182470

申请日：2023-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L23/29 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US12009331B2

公开(公告)日：2024-06-11

申请号：US18330616

申请日：2023-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/13 ,  H01L25/0655 ,  H01L2224/2101 ,  H01L2924/35121 ,  H01L2924/37001

Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

公开(公告)号：US20230154830A1

公开(公告)日：2023-05-18

申请号：US18150552

申请日：2023-01-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/481 ,  H01L21/565 ,  H01L21/76871 ,  H01L24/09 ,  H01L24/32 ,  H01L23/3107 ,  H01L2224/02372 ,  H01L2224/02379

Abstract: A semiconductor device includes a first die, a second die, a first redistribution layer (RDL) structure and a connector. The RDL structure is disposed between the first die and the second die and is electrically connected to the first die and the second die and includes a first polymer layer, a second polymer layer, a first conductive pattern and an adhesion promoter layer. The adhesion promoter layer is between and in direct contact with the second polymer layer and the first conductive pattern. The connector is disposed in the first polymer layer and in direct contact with the second die and the first conductive pattern.

公开(公告)号：US11715717B2

公开(公告)日：2023-08-01

申请号：US17338872

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/29 ,  H01L25/065 ,  H01L21/56 ,  H01L23/538

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/13 ,  H01L25/0655 ,  H01L2224/2101 ,  H01L2924/35121 ,  H01L2924/37001

Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

公开(公告)号：US20220302066A1

公开(公告)日：2022-09-22

申请号：US17338872

申请日：2021-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56 ,  H01L23/48

Abstract: In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

公开(公告)号：US10833053B1

公开(公告)日：2020-11-10

申请号：US16513732

申请日：2019-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Hung-Chun Cho

IPC: H01L23/495 ,  H01L25/065 ,  H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48

Abstract: A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound. The redistribution structure has a first via portion embedded in the first polymer dielectric layer and a second via portion embedded in the second polymer dielectric layer. A base angle of the first via portion is greater than a base angle of the second via portion.