公开(公告)号：US20200258989A1

公开(公告)日：2020-08-13

申请号：US16861478

申请日：2020-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Jiech-Fun Lu ,  Kuo-Hwa Tzeng ,  Shih-Pei Chou ,  Yu-Hung Cheng ,  Yeur-Luen Tu

IPC: H01L29/40 ,  H01L21/311 ,  H01L21/66 ,  H01L21/324 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

公开(公告)号：US10204822B2

公开(公告)日：2019-02-12

申请号：US15884304

申请日：2018-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Hsien Chou ,  Hung-Ling Shih ,  Tsun-Kai Tsao ,  Ming-Huei Shen ,  Kuo-Hwa Tzeng ,  Yeur-Luen Tu

IPC: H01L21/02 ,  H01L21/762

Abstract: In a method for fabricating a semiconductor device, a trench is etched in a semiconductor substrate having a top surface, and a lining oxide layer is formed conformal to the trench. A negatively-charged liner covering the lining oxide layer and conformal to the trench is formed. The trench is partially filled with a flowable oxide to a level below the top surface of the semiconductor substrate, and the flowable oxide in the trench is cured. The negatively-charged liner above the cured flowable oxide is optionally removed. A silicon oxide is deposited in the remaining portion of the trench, and a planarization process is performed to remove excess portions of the silicon oxide over the top surface of the semiconductor substrate.