公开(公告)号：US20210033982A1

公开(公告)日：2021-02-04

申请号：US16891067

申请日：2020-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Chang Hsu ,  Chieh-Jen Cheng ,  Li-Jui Chen ,  Shang-Chieh Chien ,  Chao-Chen Chang ,  Ssu-Yu Chen

IPC: G03F7/20 ,  H01L21/027

Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.

公开(公告)号：US12282262B2

公开(公告)日：2025-04-22

申请号：US17734774

申请日：2022-05-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu Chen ,  Shang-Chieh Chien ,  Li-Jui Chen

IPC: G03F7/00 ,  G03F7/20 ,  H05G2/00

Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

公开(公告)号：US11297710B2

公开(公告)日：2022-04-05

申请号：US16787947

申请日：2020-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu Chen ,  Shang-Chieh Chien ,  Li-Jui Chen

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.

公开(公告)号：US10955762B2

公开(公告)日：2021-03-23

申请号：US16927142

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Chieh Hsieh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.

公开(公告)号：US10712676B2

公开(公告)日：2020-07-14

申请号：US16675921

申请日：2019-11-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Ssu-Yu Chen ,  Shang-Chieh Chien ,  Chieh Hsieh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.