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公开(公告)号：US12207381B2
公开(公告)日：2025-01-21
申请号：US17712373
申请日：2022-04-04
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu Chen , Shang-Chieh Chien , Li-Jui Chen
Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.
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公开(公告)号：US10791616B1
公开(公告)日：2020-09-29
申请号：US16365905
申请日：2019-03-27
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu Chen , Chi Yang , Che-Chang Hsu , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
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公开(公告)号：US11320744B2
公开(公告)日：2022-05-03
申请号：US16882086
申请日：2020-05-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu Chen , Shang-Chieh Chien , Li-Jui Chen
Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.
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公开(公告)号：US11650508B2
公开(公告)日：2023-05-16
申请号：US16900735
申请日：2020-06-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu Chen , Hsin-Feng Chen , Chi Yang , Li-Jui Chen
IPC: G03F7/20
CPC classification number: G03F7/70033
Abstract: A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.
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公开(公告)号：US11086237B2
公开(公告)日：2021-08-10
申请号：US16805861
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Chen , Po-Chung Cheng , Li-Jui Chen , Che-Chang Hsu , Chi Yang
IPC: G03F7/20
Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.
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Patent Agency Ranking
公开(公告)号：US10824083B2
公开(公告)日：2020-11-03
申请号：US16057208
申请日：2018-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi Yang , Ssu-Yu Chen , Shang-Chieh Chien , Chieh Hsieh , Tzung-Chi Fu , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
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公开(公告)号：US10512147B1
公开(公告)日：2019-12-17
申请号：US16240951
申请日：2019-01-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi Yang , Sheng-Ta Lin , Ssu-Yu Chen , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
Abstract: An extreme ultraviolet radiation source is provided, including a droplet generator and a droplet catcher. The droplet generator is configured to output a plurality of target droplets along a target droplet path that is parallel to a horizontal direction. The droplet catcher includes an open end substantially aligned with the target droplet path, and an enclosed end that is opposite to the open end. The droplet catcher also includes a pipe wall disposed between the open end the enclosed end. The pipe wall includes a first pipe wall portion having an inner top surface parallel to the horizontal direction and an inner bottom surface inclined relative to the inner top surface. In addition, the droplet catcher includes at least one gutter formed on the inner bottom surface and having a long axis extending along the horizontal direction.
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公开(公告)号：US12130556B2
公开(公告)日：2024-10-29
申请号：US18304778
申请日：2023-04-21
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu Chen , Hsin-Feng Chen , Chi Yang , Li-Jui Chen
IPC: G03F7/00
CPC classification number: G03F7/70033
Abstract: A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.
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公开(公告)号：US11360392B2
公开(公告)日：2022-06-14
申请号：US16891067
申请日：2020-06-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Che-Chang Hsu , Chieh-Jen Cheng , Li-Jui Chen , Shang-Chieh Chien , Chao-Chen Chang , Ssu-Yu Chen
IPC: G03F7/20 , H01L21/027
Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.
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公开(公告)号：US20210033983A1
公开(公告)日：2021-02-04
申请号：US16805861
申请日：2020-03-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ssu-Yu Chen , Po-Chung Cheng , Li-Jui Chen , Che-Chang Hsu , Chi Yang
IPC: G03F7/20
Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a collecting tank and a temperature adjusting pack. The collecting tank has a cover and the cover includes a plurality of through holes. Thicknesses of edges of the cover is greater than a thickness of a center of the cover. The temperature adjusting pack surrounds the collecting tank. The temperature adjusting pack includes a plurality of inlets aligned with the through holes.
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