公开(公告)号：US09556015B1

公开(公告)日：2017-01-31

申请号：US14925867

申请日：2015-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Hao Hung ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Tao-Cheng Liu

IPC: H01L21/00 ,  B81B1/00 ,  B81C1/00

CPC classification number: B81B1/004 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00087 ,  B81C1/00619 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2203/0118

Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

Abstract translation: 本公开提供了一种用于微机电系统（MEMS）装置的衬底结构。 衬底结构包括帽和微机电系统（MEMS）衬底。 盖具有空腔，并且MEMS基板设置在盖上。 MEMS基板具有暴露空腔的多个通孔，并且通孔的纵横比大于30。