公开(公告)号：US20230360913A1

公开(公告)日：2023-11-09

申请号：US18356636

申请日：2023-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/7845 ,  H01L29/786 ,  H10K10/84 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US11749528B2

公开(公告)日：2023-09-05

申请号：US17736505

申请日：2022-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC classification number: H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/786 ,  H01L29/7845 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US11239354B2

公开(公告)日：2022-02-01

申请号：US16926766

申请日：2020-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Lu ,  Chao-Ching Cheng ,  Tzu-Ang Chao ,  Lain-Jong Li

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A transistor device having fin structures, source and drain terminals, channel layers and a gate structure is provided. The fin structures are disposed on a material layer. The fin structures are arranged in parallel and extending in a first direction. The source and drain terminals are disposed on the fin structures and the material layer and cover opposite ends of the fin structures. The channel layers are disposed respectively on the fin structures, and each channel layer extends between the source and drain terminals on the same fin structure. The gate structure is disposed on the channel layers and across the fin structures. The gate structure extends in a second direction perpendicular to the first direction. The materials of the channel layers include a transition metal and a chalcogenide, the source and drain terminals include a metallic material, and the channel layers are covalently bonded with the source and drain terminals.