公开(公告)号：US20230360711A1

公开(公告)日：2023-11-09

申请号：US17737259

申请日：2022-05-05

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Kuo-Pin Chang ,  Kuo-Ching Huang

IPC: G11C17/16 ,  G11C13/00

CPC classification number: G11C17/16 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069

Abstract: A one-time programmable (OTP) memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, each memory cell of the plurality of memory cells including a first terminal coupled to a bit line of the plurality of bit lines, a second terminal coupled to a word line of the plurality of word lines, and a selector coupled between the first terminal and the second terminal and having a threshold voltage that is alterable by an electric current.

公开(公告)号：US20240389486A1

公开(公告)日：2024-11-21

申请号：US18317120

申请日：2023-05-15

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Kuo-Pin Chang ,  Yu-Wei Ting ,  Kuo-Ching Huang

IPC: H10N79/00

Abstract: A device structure includes a parallel connection of capacitor-switch assemblies located over a substrate. The capacitor-switch assemblies include a first capacitor-switch assembly that includes a first series connection of a first capacitor and a first non-Ohmic switching device, which has a first threshold voltage and includes a first primary switch electrode, a first secondary switch electrode, and a first non-Ohmic switching material portion. The capacitor switch assemblies further include a second capacitor-switch assembly that includes a second series connection of a second capacitor and a second non-Ohmic switching device, which has a second threshold voltage and includes a second primary switch electrode, a second secondary switch electrode, and a second non-Ohmic switching material portion. The second threshold voltage is different from the first threshold voltage. The non-Ohmic switching devices may be conditionally turned on depending on a magnitude of applied voltage spikes.

公开(公告)号：US20240276893A1

公开(公告)日：2024-08-15

申请号：US18327432

申请日：2023-06-01

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Hung-Ju Li ,  Kuo-Ching Huang ,  Yu-Wei Ting ,  Kuo-Pin Chang

IPC: H10N70/20 ,  H10N70/00

CPC classification number: H10N70/231 ,  H10N70/011 ,  H10N70/8413 ,  H10N70/8828

Abstract: Phase change material (PCM) switches and methods of fabrication thereof that include a phase change material layer and a selector having a first electrode and an ovonic threshold switching (OTS) material layer. The first electrode may selectively apply a bias voltage to the OTS layer, causing localized heating within the OTS layer. The phase change material layer may be in thermal contact with the OTS layer such that the OTS layer may heat an active region of the phase change material layer. By controlling the voltage applied to the first electrode and the resultant heating within the OTS layer, the active region of the phase change material layer may be selectively transitioned between a high resistivity state and a low resistivity state. A PCM switch according to various embodiments may enable low power and fast switching between high resistivity and low resistivity states and reduced parasitic capacitance.