摘要:
Ferromagnetic layers (18, 22) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers (18, 22) is substantially zero. That is, the ferromagnetic layers (18, 22) are exchange-coupled with a nonmagnetic layer (20) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers (18, 22) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer (14). Therefore, the ferromagnetic layer (14) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers (18, 22) are made of a CoFe alloy having a high exchange-coupling force.
摘要:
A magnetic field detector includes: a magnet; a magnetic resistance element used for detection having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a magnetic resistance element used for reference having the substantially same layer structure as that of the magnetic resistance element used for detection, wherein a magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in the direction which is felt by the ferromagnetic layer of the magnetic resistance element used for reference.
摘要:
There are provided magnetic storage elements capable of performing a high-reliability write operation by inhibiting erroneous reversal of data of the magnetic storage element put in a semi-selected state, and a magnetic storage device using this. A recording layer having an easy axis and a hard axis overlaps at least one of a first or second conductive layer at the entire region thereof in plan view. First endpoints of a first line segment along the easy axis and maximum in dimension overlapping the recording layer in plan view don't overlap the second conductive layer in plan view. At least one of second endpoints of a pair of endpoints of a second line segment passing through the middle point of the first line segment, orthogonal to the first line segment in plan view, and overlapping the recording layer in plan view doesn't overlap the first conductive layer in plan view.
摘要:
Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.
摘要:
Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
摘要:
A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要:
A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要:
A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.
摘要:
A magnetic position detecting device includes a magnet; first to fourth magnetoelectric conversion elements formed on a virtual plane; and a flux guide made of a magnetic material. The flux guide includes first and second protrusions provided at a distance from each other in a direction parallel to the virtual plane. A specific portion recessed in a concave shape is provided in the flux guide in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements are provided approximately in the mid-portion between the first and second protrusions. The second magnetoelectric conversion element is provided between the first protrusion and the mid-portion.
摘要:
A magnetic position detecting device (10) includes a magnet (4); first to fourth magnetoelectric conversion elements (1A to 1D) formed on a virtual plane along a substrate (3); and a flux guide (5) made of a magnetic material. The flux guide (5) includes first and second protrusions (9B, 9A) provided at a distance from each other in the X-axis direction parallel to the virtual plane. As seen in the Z-axis direction perpendicular to the virtual plane, a center portion (MP) recessed in a concave shape is provided in the flux guide (5) in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements (1A to 1D) are provided approximately in the mid-portion between the first and second protrusions so as to cover a part of the center portion (MP) as seen in the Z-axis direction. The second magnetoelectric conversion element (1B) is provided between the first protrusion (9B) and the center portion (MP) as seen in the Z-axis direction. The second magnetoelectric conversion element (1B) is provided between the second protrusion (9A) and the center portion (MP) as seen in the Z-axis direction.