公开(公告)号：US20080186635A1

公开(公告)日：2008-08-07

申请号：US12098291

申请日：2008-04-04

申请人： Takashi TAKENAGA ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

发明人： Takashi TAKENAGA ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

IPC分类号： G11B5/33

CPC分类号： G01R33/09 ,  B82Y25/00 ,  G01R15/205 ,  G01R33/093

摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.

摘要翻译： 具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。 参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性自由层 具有适于由外部磁场改变的磁化方向的材料。 参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向 和非磁场中的自由层的磁化方向彼此不同。 因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

公开(公告)号：US20090261435A1

公开(公告)日：2009-10-22

申请号：US12427024

申请日：2009-04-21

申请人： Hiroshi TAKADA ,  Takashi TAKENAGA ,  Takeharu KUROIWA ,  Taisuke FURUKAWA

发明人： Hiroshi TAKADA ,  Takashi TAKENAGA ,  Takeharu KUROIWA ,  Taisuke FURUKAWA

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  H01L43/08

摘要： A magnetic memory element having a layer structure containing a fixing layer (pinned layer: PL) having a magnetization direction fixed unidirectionally, a nonmagnetic dielectric layer (TN1) in contact with the fixing layer (PL), and a memory layer (free layer: FL) having a first surface in contact with the nonmagnetic dielectric layer (TN1) and a second surface on the opposite to the first surface, the magnetization direction of the memory layer (FL) having a reversible magnetization direction in response to the current through the layer structure. The entire surface of the first surface of the memory layer (FL) is covered with the nonmagnetic dielectric layer (TN1) and in the joint surface of the nonmagnetic dielectric layer (TN1) and the fixing layer (PL), the first surface of the nonmagnetic dielectric layer (TN1) is exposed in a manner of surrounding the joint surface.

摘要翻译： 具有层状结构的磁记忆元件，其具有单向固定磁化方向的固定层（被钉扎层：PL），与固定层（PL）接触的非磁性介电层（TN1），以及存储层（自由层： FL），其具有与非磁性介电层（TN1）接触的第一表面和与第一表面相反的第二表面，存储层（FL）的磁化方向响应于通过所述第一表面的电流而具有可逆磁化方向 层结构。 存储层（FL）的第一表面的整个表面被非磁性介电层（TN1）覆盖，并且在非磁性介电层（TN1）和固定层（PL）的接合表面中，第一表面 非磁性介电层（TN1）以包围接合面的方式露出。

公开(公告)号：US20120251847A1

公开(公告)日：2012-10-04

申请号：US13397615

申请日：2012-02-15

申请人： Takashi TAKENAGA ,  Takeharu KUROIWA ,  Taisuke FURUKAWA

发明人： Takashi TAKENAGA ,  Takeharu KUROIWA ,  Taisuke FURUKAWA

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

摘要： There are provided magnetic storage elements capable of performing a high-reliability write operation by inhibiting erroneous reversal of data of the magnetic storage element put in a semi-selected state, and a magnetic storage device using this. A recording layer having an easy axis and a hard axis overlaps at least one of a first or second conductive layer at the entire region thereof in plan view. First endpoints of a first line segment along the easy axis and maximum in dimension overlapping the recording layer in plan view don't overlap the second conductive layer in plan view. At least one of second endpoints of a pair of endpoints of a second line segment passing through the middle point of the first line segment, orthogonal to the first line segment in plan view, and overlapping the recording layer in plan view doesn't overlap the first conductive layer in plan view.

摘要翻译： 提供了能够通过抑制放置在半选择状态的磁存储元件的数据的错误反转来执行高可靠性写入操作的磁存储元件，以及使用该存储元件的磁存储器件。 具有容易轴和硬轴的记录层在平面图中在其整个区域与第一或第二导电层中的至少一个重叠。 在俯视图中沿着容易轴的第一线段的第一端点和与记录层重叠的尺寸的最大值在平面图中不与第二导电层重叠。 穿过第一线段的中点的平面图中与第一线段正交并且在平面图中与记录层重叠的第二线段的一对端点中的至少一个端点不重叠 第一导电层在平面图中。

公开(公告)号：US20050027448A1

公开(公告)日：2005-02-03

申请号：US10710228

申请日：2004-06-28

申请人： Takashi TAKENAGA ,  Kouji AMANO

发明人： Takashi TAKENAGA ,  Kouji AMANO

IPC分类号： G09B29/00 ,  G01C21/00 ,  G01C21/34 ,  G08G1/01 ,  G08G1/0967 ,  G08G1/0969 ,  G09B29/10 ,  G01C21/30

CPC分类号： G08G1/096716 ,  G01C21/3694 ,  G08G1/09675 ,  G08G1/096775

摘要： A processor acquires VICS data that provide map information and traffic jam information of a vehicle. As it recognizes a request for displaying the transition of a traffic jam, if any, it computationally generates traffic jam prediction information after the elapse of a predetermined time, e.g., every 30 minutes, using a traffic jam prediction table and calendar template obtained by statistically processing past data with temporal elements on the basis of the current time and day. Then, it causes a terminal display (140) to display a map corresponding to the map information and superimposed by an icon reflecting the traffic jam prediction information at predetermined time intervals of 0.5 seconds or 1 second for instance, in a switched manner to make the map being displayed appear as if it is animated so that a user can easily recognize the transition of the traffic jam condition.

摘要翻译： 处理器获取提供车辆的地图信息和交通堵塞信息的VICS数据。 由于它识别到显示交通堵塞转移的请求（如果有的话），在经过预定时间（例如，每30分钟）之后，使用通过统计学方法获得的交通堵塞预测表和日历模板来计算地产生交通堵塞预测信息 基于当前时间和日期处理具有时间要素的过去数据。 然后，以切换的方式使终端显示（140）以0.5秒或1秒的预定时间间隔显示对应于地图信息的地图并叠加反映交通拥堵预测信息的图标， 正在显示的地图似乎被动画化，使得用户可以容易地识别交通堵塞状况的转变。

公开(公告)号：US20110291209A1

公开(公告)日：2011-12-01

申请号：US13150719

申请日：2011-06-01

申请人： Takashi TAKENAGA ,  Ryoji MATSUDA ,  Junichi TSUCHIMOTO

发明人： Takashi TAKENAGA ,  Ryoji MATSUDA ,  Junichi TSUCHIMOTO

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

摘要： To provide a magnetic memory device having an increased write current and improved reliability in writing. The magnetic memory device of the invention has a substrate, a write line provided over the substrate, a bit line placed with a space from the write line in a thickness direction of the substrate and extending in a direction crossing with an extending direction of the write line, and a magnetic memory element positioned between the write line and the bit line. The magnetic memory element has a pinned layer whose magnetization direction has been fixed and a recording layer whose magnetization direction changes, depending on an external magnetic field. The recording layer contains an alloy film. The alloy film contains cobalt, iron, and boron and its boron content exceeds 21 at %.

摘要翻译： 提供具有增加的写入电流和提高写入可靠性的磁存储器件。 本发明的磁存储装置具有基板，设置在基板上的写入线，沿着基板的厚度方向从写入线放置空间的位线，并且沿与写入的延伸方向交叉的方向延伸 线和位于写入线和位线之间的磁存储元件。 磁存储元件具有磁化方向固定的钉扎层和磁化方向根据外部磁场而变化的记录层。 记录层含有合金膜。 合金膜含有钴，铁和硼，其硼含量超过21原子％。