Magnetic field detector and manufacturing method thereof
    1.
    发明授权
    Magnetic field detector and manufacturing method thereof 有权
    磁场检测器及其制造方法

    公开(公告)号:US07733210B2

    公开(公告)日:2010-06-08

    申请号:US11378645

    申请日:2006-03-20

    IPC分类号: H01L43/00

    CPC分类号: G01R33/093 B82Y25/00

    摘要: A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.

    摘要翻译: 磁场检测器包括:磁体; 具有包含铁磁层的层结构的检测磁阻元件,所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。 其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。

    Magnetic field detector and manufacturing method thereof
    2.
    发明申请
    Magnetic field detector and manufacturing method thereof 有权
    磁场检测器及其制造方法

    公开(公告)号:US20070069849A1

    公开(公告)日:2007-03-29

    申请号:US11378645

    申请日:2006-03-20

    IPC分类号: H01L43/00

    CPC分类号: G01R33/093 B82Y25/00

    摘要: A magnetic field detector includes: a magnet; a magnetic resistance element used for detection having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a magnetic resistance element used for reference having the substantially same layer structure as that of the magnetic resistance element used for detection, wherein a magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in the direction which is felt by the ferromagnetic layer of the magnetic resistance element used for reference.

    摘要翻译: 磁场检测器包括:磁体; 用于检测的磁阻元件具有包含铁磁层的层结构,当铁磁层的磁化方向改变时,电阻改变; 以及用于参考的磁阻元件,其具有与用于检测的磁阻元件基本相同的层结构,其中磁场强度高于饱和磁场的磁场被磁体施加在 由用于参考的磁阻元件的铁磁层感觉到的方向。

    Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same
    3.
    发明授权
    Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same 有权
    用于检测施加到磁阻效应元件的外部磁场的磁场检测装置及其调整方法

    公开(公告)号:US07786725B2

    公开(公告)日:2010-08-31

    申请号:US11509609

    申请日:2006-08-25

    IPC分类号: G01B7/30

    摘要: A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.

    摘要翻译: 公开了能够根据具体应用需要改变检测范围和检测灵敏度的磁场检测装置。 磁阻效应元件施加偏置磁场和外部磁场。 在相同的直线上产生偏置磁场和外部磁场,因此偏置磁场用于阻止施加到磁阻效应元件的外部磁场。 因此,磁阻效应元件的自由层的磁化被抑制,并且磁化矢量的旋转角度减小。 结果,磁阻效应元件对外部磁场的电阻值的特性偏移与偏置磁场相当的量。

    Magnetic field detection apparatus and method of adjusting the same
    4.
    发明申请
    Magnetic field detection apparatus and method of adjusting the same 有权
    磁场检测装置及其调整方法

    公开(公告)号:US20070047152A1

    公开(公告)日:2007-03-01

    申请号:US11509609

    申请日:2006-08-25

    IPC分类号: G11B5/33

    摘要: A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.

    摘要翻译: 公开了能够根据具体应用需要改变检测范围和检测灵敏度的磁场检测装置。 磁阻效应元件施加偏置磁场和外部磁场。 在相同的直线上产生偏置磁场和外部磁场,因此偏置磁场用于阻止施加到磁阻效应元件的外部磁场。 因此,磁阻效应元件的自由层的磁化被抑制,并且磁化矢量的旋转角度减小。 结果,磁阻效应元件对外部磁场的电阻值的特性偏移与偏置磁场相当的量。

    Magnetic field detection device
    5.
    发明授权
    Magnetic field detection device 有权
    磁场检测装置

    公开(公告)号:US08378674B2

    公开(公告)日:2013-02-19

    申请号:US12601098

    申请日:2008-05-27

    IPC分类号: G01R33/02

    摘要: A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

    摘要翻译: 一种磁场检测装置,包括用于调整施加到磁阻元件的磁场的磁体(磁通量)。 平面图中的基板上磁体的形状在一端部侧呈锥形,在与一端部相反的另一端部侧呈大致漏斗状,另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中,锥形部分的轮廓不像漏斗那样呈直线状,而是具有弯曲形状,其中第一弯曲部分以柔和曲率向外突出,第二弯曲部分向内突出,曲率类似于 第一弯曲部分的连续形成。

    NONVOLATILE MEMORY DEVICE
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号:US20100270633A1

    公开(公告)日:2010-10-28

    申请号:US12830954

    申请日:2010-07-06

    IPC分类号: H01L29/82

    摘要: Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

    摘要翻译: 铁磁层具有朝向彼此抵消的方向取向的磁化,使得铁磁层的净磁化基本上为零。 也就是说,铁磁层与插入其间的非磁性层交换耦合,从而形成SAF结构。 由于形成SAF结构的铁磁层的净磁化基本上为零,记录层的磁化由铁磁层的磁化决定。 因此,铁磁层由具有高的单轴磁各向异性的CoFeB合金制成,铁磁层由具有高交换耦合力的CoFe合金制成。

    MAGNETIC FIELD DETECTION DEVICE
    7.
    发明申请
    MAGNETIC FIELD DETECTION DEVICE 有权
    磁场检测装置

    公开(公告)号:US20100156405A1

    公开(公告)日:2010-06-24

    申请号:US12601098

    申请日:2008-05-27

    IPC分类号: G01R33/02

    摘要: A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

    摘要翻译: 一种磁场检测装置,包括用于调整施加到磁阻元件的磁场的磁体(磁通量)。 平面图中的基板上磁体的形状在一端部侧呈锥形,在与一端部相反的另一端部侧呈大致漏斗状,另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中,锥形部分的轮廓不像漏斗那样呈直线状,而是具有弯曲形状,其中第一弯曲部分以柔和曲率向外突出,第二弯曲部分向内突出,曲率类似于 第一弯曲部分的连续形成。

    Nonvolatile memory device
    8.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号:US07983075B2

    公开(公告)日:2011-07-19

    申请号:US12830954

    申请日:2010-07-06

    IPC分类号: G11C11/00

    摘要: Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

    摘要翻译: 铁磁层具有朝向彼此抵消的方向取向的磁化,使得铁磁层的净磁化基本上为零。 也就是说,铁磁层与插入其间的非磁性层交换耦合,从而形成SAF结构。 由于形成SAF结构的铁磁层的净磁化基本上为零,记录层的磁化由铁磁层的磁化决定。 因此,铁磁层由具有高的单轴磁各向异性的CoFeB合金制成,铁磁层由具有高交换耦合力的CoFe合金制成。

    Nonvolatile Memory Device
    9.
    发明申请
    Nonvolatile Memory Device 失效
    非易失性存储器件

    公开(公告)号:US20090273965A1

    公开(公告)日:2009-11-05

    申请号:US12085664

    申请日:2006-11-17

    IPC分类号: G11C11/00 H01L29/82

    摘要: Ferromagnetic layers (18, 22) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers (18, 22) is substantially zero. That is, the ferromagnetic layers (18, 22) are exchange-coupled with a nonmagnetic layer (20) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers (18, 22) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer (14). Therefore, the ferromagnetic layer (14) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers (18, 22) are made of a CoFe alloy having a high exchange-coupling force.

    摘要翻译: 铁磁层(18,22)具有朝向彼此抵消的方向的磁化,使得铁磁层(18,22)的净磁化基本上为零。 也就是说,铁磁层(18,22)与插入其间的非磁性层(20)交换耦合,从而形成SAF结构。 由于形成SAF结构的铁磁层(18,22)的净磁化基本上为零,记录层(RL)的磁化由铁磁层(14)的磁化决定。 因此,铁磁层(14)由具有高的单轴磁各向异性的CoFeB合金制成,并且铁磁层(18,22)由具有高交换耦合力的CoFe合金制成。

    Nonvolatile memory device
    10.
    发明授权
    Nonvolatile memory device 失效
    非易失性存储器件

    公开(公告)号:US07773408B2

    公开(公告)日:2010-08-10

    申请号:US12085664

    申请日:2006-11-17

    IPC分类号: G11C11/00

    摘要: Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

    摘要翻译: 铁磁层具有朝向彼此抵消的方向取向的磁化,使得铁磁层的净磁化基本上为零。 也就是说,铁磁层与插入其间的非磁性层交换耦合,从而形成SAF结构。 由于形成SAF结构的铁磁层的净磁化基本上为零,记录层的磁化由铁磁层的磁化决定。 因此,铁磁层由具有高的单轴磁各向异性的CoFeB合金制成,铁磁层由具有高交换耦合力的CoFe合金制成。