Nonvolatile semiconductor memory and method of manufacturing the same
    11.
    发明授权
    Nonvolatile semiconductor memory and method of manufacturing the same 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号:US08114742B2

    公开(公告)日:2012-02-14

    申请号:US13067141

    申请日:2011-05-11

    申请人: Takeshi Kikuchi

    发明人: Takeshi Kikuchi

    IPC分类号: H01L21/8247

    摘要: A method of forming a nonvolatile memory device which includes forming a first gate electrode on a gate insulating film formed on a semiconductor substrate. The first gate electrode having a lower portion formed on the gate insulating film and an upper portion having a gate length less than that of the lower portion formed on the lower portion. A spacer is formed contacting surfaces of the upper and lower portions, wherein a length of the spacer and the upper portion equals the length of the lower portion. An electric charge trapping film covers a portion of the semiconductor substrate, a surface of the lower portion, and a surface of the spacer. A second gate electrode is then formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film. The second gate electrode has a distance between the upper portion of the first gate electrode thai is greater than a distance between the lower portion and is separated from the upper portion of the first gate electrode by the electric charge trapping film and the spacer.

    摘要翻译: 一种形成非易失性存储器件的方法,包括在形成在半导体衬底上的栅极绝缘膜上形成第一栅电极。 所述第一栅电极具有形成在所述栅极绝缘膜上的下部,所述第一栅电极的栅极长度小于形成在所述下部的下部的栅极长度。 形成间隔件,接触上部和下部的表面,其中间隔件和上部的长度等于下部的长度。 电荷捕获膜覆盖半导体衬底的一部分,下部的表面和间隔物的表面。 然后在第一栅电极的侧面方向上形成第二栅电极,并通过电荷捕获膜与第一栅极电绝缘。 第二栅极电极具有大于第一栅极电极的上部之间的距离,并且通过电荷捕获膜和间隔物与第一栅电极的上部分离。

    Nonvolatile semiconductor memory and method of manufacturing the same
    12.
    发明申请
    Nonvolatile semiconductor memory and method of manufacturing the same 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号:US20110217831A1

    公开(公告)日:2011-09-08

    申请号:US13067141

    申请日:2011-05-11

    申请人: Takeshi Kikuchi

    发明人: Takeshi Kikuchi

    IPC分类号: H01L21/3205

    摘要: A method of forming a nonvolatile semiconductor memory device includes forming a semiconductor substrate, forming upper and lower portions of a first gate electrode on a gate insulating film formed on the semiconductor substrate, the lower portion of the first gate electrode formed on the gate insulating film, the upper portion of the first gate electrode formed on the lower portion of the first gate electrode and having a gate length which is less than a gate length of the lower portion of the first gate electrode, forming a spacer insulating film to contact respective surfaces of the upper and lower portions of the first gate electrode, in which a length of the spacer insulating film combined with the gate length of the upper portion of the first gate electrode is equal to the gate length of the lower portion of the first gate electrode, forming an electric charge trapping film covering a portion of the semiconductor substrate, a surface of the lower portion of the first gate electrode, and a surface of the spacer insulating film, and forming a second gate electrode in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film, the second gate electrode having a distance between the upper portion of the first gate electrode that is greater than a distance between the lower portion of the first gate electrode, in which the second gate electrode is separated by the upper portion of the first gate electrode by the electric charge trapping film and the spacer insulating film.

    摘要翻译: 形成非易失性半导体存储器件的方法包括形成半导体衬底,在形成于半导体衬底上的栅极绝缘膜上形成第一栅电极的上部和下部,形成在栅极绝缘膜上的第一栅电极的下部 ,所述第一栅电极的上部形成在所述第一栅电极的下部,并且栅极长度小于所述第一栅电极的下部的栅极长度,形成间隔绝缘膜以接触各个表面 所述第一栅极的上部和下部的所述间隔绝缘膜的长度与所述第一栅电极的上部的栅极长度相结合的长度等于所述第一栅电极的下部的栅极长度 形成覆盖半导体衬底的一部分的电荷捕获膜,第一栅极电极的下部的表面 de和间隔绝缘膜的表面,并且在第一栅电极的侧面方向上形成第二栅电极,并通过电荷捕获膜与第一栅极电绝缘,第二栅电极具有距离 所述第一栅电极的上部比所述第一栅电极的下部与所述第一栅电极的上部与所述第一栅电极的上部分别由所述电荷捕获膜和所述间隔绝缘体 电影。

    METHOD FOR GLYCOSYLATING AND SEPARATING PLANT FIBER MATERIAL
    13.
    发明申请
    METHOD FOR GLYCOSYLATING AND SEPARATING PLANT FIBER MATERIAL 有权
    用于糖化和分离植物纤维材料的方法

    公开(公告)号:US20110082291A1

    公开(公告)日:2011-04-07

    申请号:US12995756

    申请日:2009-06-02

    IPC分类号: C07H1/08 C07H1/00

    CPC分类号: C13K1/02

    摘要: The invention relates to a method for hydrolyzing a plant fiber material to produce and separate a saccharide including glucose. The method includes a hydrolysis process of using a cluster acid catalyst in a pseudo-molten state to hydrolyze cellulose contained in the plant fiber material, and produce glucose. The cluster acid catalyst is subjected to a clustering enhancing treatment by which clustering of the cluster acid catalyst in a crystalline state is enhanced.

    摘要翻译: 本发明涉及一种用于水解植物纤维材料以产生和分离包括葡萄糖的糖的方法。 该方法包括使用假熔融状态的簇酸催化剂水解纤维素中所含的纤维素并产生葡萄糖的水解方法。 聚簇酸催化剂进行聚簇增强处理,通过该聚集增强处理,晶体状态的聚集酸催化剂的聚集得到增强。

    Transmission of musical tone information
    14.
    发明授权
    Transmission of musical tone information 失效
    传播音乐信息

    公开(公告)号:US06525253B1

    公开(公告)日:2003-02-25

    申请号:US09337958

    申请日:1999-06-22

    IPC分类号: G10H700

    摘要: A musical tone information transmitting apparatus that can efficiently transmit musical tone information comprises: a device for inputting musical tone information; a plurality of processing units which jointly process the musical tone information from said input means in distributed processing; a packet generator for measuring an amount of said musical tone information distributedly processed by the plurality of processing units at a predetermined cycle, for extracting and packetizing a predetermined amount of the musical tone information into a first packet when the amount of the musical tone information is greater than the predetermined amount and for further packetizing next musical tone information after said predetermined cycle is lapsed from the time corresponding to the last musical tone information of said first packet; and a device for transmitting said packets generated by said packet generator.

    摘要翻译: 能够有效地发送乐音信息的乐音信息发送装置包括:用于输入乐音信息的装置; 多个处理单元,其以分布式处理联合地处理来自所述输入装置的乐音信息; 分组发生器,用于以预定周期测量由所述多个处理单元分配处理的所述乐音信息的量,用于当所述乐音信息的量为音乐信息的数量时将预定量的所述乐音信息提取和分组为第一分组 大于预定量,并且在从与所述第一分组的最后乐曲信息相对应的时间过去所述预定周期之后进一步分组下一个音调信息; 以及用于发送由所述分组生成器生成的所述分组的装置。

    Manufacturing method of semiconductor device
    15.
    发明授权
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号:US06335289B1

    公开(公告)日:2002-01-01

    申请号:US09525745

    申请日:2000-03-14

    申请人: Takeshi Kikuchi

    发明人: Takeshi Kikuchi

    IPC分类号: H01L21311

    CPC分类号: H01L27/11521 H01L27/115

    摘要: The present invention relates to a method of manufacturing a semiconductor device; which comprises the steps of forming, upon a substrate having a plurality of raised sections on the surface, a polysilicon film so as to fill up recesses formed between these raised sections and, through patterning, forming a polysilicon line therefrom; forming a natural oxidation film or an oxide film with a thickness of 1 nm to 3 nm on the surface of said polysilicon line; forming an additional polysilicon film, and thereafter etching back said additional polysilicon film; forming an insulating film thereon, and thereafter forming sidewalls from said insulating film through eteching back; forming a diffusion region on said substrate; and forming a silicide film over said polysilicon line. According to the present invention, a silicide film can be formed evenly over a polysilicon line that is formed on a stepped substrate so that, with this technique, semiconductor devices having excellent characteristics and reliability can be manufactured with a high yield.

    摘要翻译: 本发明涉及一种制造半导体器件的方法; 该方法包括以下步骤:在表面上具有多个凸起部分的基底上形成多晶硅膜,以填充形成在这些凸起部分之间的凹槽,并通过图案化形成多晶硅线; 在所述多晶硅线的表面上形成厚度为1nm至3nm的自然氧化膜或氧化物膜; 形成另外的多晶硅膜,然后蚀刻所述附加多晶硅膜; 在其上形成绝缘膜,然后通过后退从所述绝缘膜形成侧壁; 在所述衬底上形成扩散区; 以及在所述多晶硅线上形成硅化物膜。 根据本发明,可以在形成在阶梯状基板上的多晶硅线路上均匀地形成硅化物膜,从而可以以高产率制造具有优异特性和可靠性的半导体器件。

    Digital filter and oversampling analog to digital converter employing
the same
    16.
    发明授权
    Digital filter and oversampling analog to digital converter employing the same 失效
    数字滤波器和采样模数转换器的过采样

    公开(公告)号:US5506798A

    公开(公告)日:1996-04-09

    申请号:US312195

    申请日:1994-09-26

    CPC分类号: H03H17/0266 H03H17/0294

    摘要: A digital filter has a cut-off frequency which can be varied by a simple control circuit. The digital filter includes a tap coefficient setting section and a convolution calculation section. The convolution calculation section is constructed so as to repetitively perform the processing of first performing repetitive convolution calculation wherein a same convolution calculation operation is performed once or successively by a plurality of times using same tap coefficients or same input data and then varying the tap coefficient or the input data to allow the repetitive convolution calculation to be repeated subsequently. The digital filter can be applied to an oversampling analog to digital converter.

    摘要翻译: 数字滤波器具有可以通过简单的控制电路来改变的截止频率。 数字滤波器包括抽头系数设置部分和卷积计算部分。 卷积计算部被构造成重复执行第一次执行重复卷积计算的处理,其中使用相同的抽头系数或相同的输入数据一次或连续地执行相同的卷积计算操作,然后改变抽头系数或 随后重复输入数据以重复卷积计算。 数字滤波器可以应用于过采样模数转换器。

    Data transfer device and data transfer method
    18.
    发明授权
    Data transfer device and data transfer method 有权
    数据传输设备和数据传输方式

    公开(公告)号:US08799528B2

    公开(公告)日:2014-08-05

    申请号:US13408554

    申请日:2012-02-29

    申请人: Takeshi Kikuchi

    发明人: Takeshi Kikuchi

    IPC分类号: G06F3/00 G06F13/00

    摘要: One embodiment provides a data transfer device, including: a register configured to set an upper limit value for a transfer data size; and a transfer size controller configured to compare the upper limit value and the transfer data size sent from an external device, and to reduce the transfer data size when the transfer data size is larger than the upper limit value.

    摘要翻译: 一个实施例提供了一种数据传输装置,包括:配置为设置传输数据大小的上限值的寄存器; 以及传送大小控制器,被配置为比较从外部设备发送的上限值和传送数据大小,并且当传送数据大小大于上限值时减小传送数据大小。

    GEAR DEVICE AND VEHICLE HAVING SAME MOUNTED THEREON
    19.
    发明申请
    GEAR DEVICE AND VEHICLE HAVING SAME MOUNTED THEREON 有权
    齿轮装置及其安装的车辆

    公开(公告)号:US20140190428A1

    公开(公告)日:2014-07-10

    申请号:US14118521

    申请日:2012-05-10

    IPC分类号: F01M5/00

    摘要: A gear device in which lubricating oil for cooling and lubricating gears to be driven therein is adjusted to a temperature and an amount suitable for the speed of a vehicle, and a vehicle having the gear device mounted thereon. A transmission adjusts the temperature of lubricating oil by supplying the lubricating oil from a lower part of a housing of the transmission into a heat exchanger by a circulation pump and causing the lubricating oil and engine cooling water to exchange heat with each other in the heat exchanger. A level of the lubricating oil retained in an oil pan when the circulation pump is stopped is defined as a highest oil level, while the level of the lubricating oil retained in the oil pan when the amount of the lubricating oil pumped up by the circulation pump is maximum is defined as a lowest oil level. The heat exchanger is disposed at a position outside the housing and higher than the highest oil level. The transmission includes a device which controls the amount of the oil to be pumped up by the lubricating pump to adjust the height of the level of the oil which varies between the highest oil level and the lowest oil level.

    摘要翻译: 一种齿轮装置,其中用于驱动其中的用于冷却和润滑齿轮的润滑油被调节到适合于车辆速度的温度和量,以及安装有齿轮装置的车辆。 变速器通过循环泵将变速器的壳体的下部的润滑油供给到热交换器中并使润滑油和发动机冷却水在热交换器中彼此进行热交换来调节润滑油的温度 。 当循环泵停止时,保持在油盘中的润滑油的水平被定义为最高油位,而当由循环泵抽出的润滑油的量被保持在油盘中时的润滑油的水平 最大值定义为最低油位。 热交换器设置在壳体外部的位置,高于最高油位。 变速器包括控制由润滑泵泵送的油量的装置,以调节在最高油位和最低油位之间变化的油位高度。

    Nonvolatile semiconductor memory and method of manufacturing the same
    20.
    发明授权
    Nonvolatile semiconductor memory and method of manufacturing the same 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号:US07973356B2

    公开(公告)日:2011-07-05

    申请号:US12285167

    申请日:2008-09-30

    申请人: Takeshi Kikuchi

    发明人: Takeshi Kikuchi

    IPC分类号: H01L29/792 H01L21/8247

    摘要: A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.

    摘要翻译: 非易失性半导体存储器件包括:半导体衬底; 通过栅极绝缘膜形成在所述半导体衬底上的第一栅电极; 第二栅电极,形成在所述第一栅电极的侧方并与所述第一栅极电绝缘; 以及至少形成在半导体衬底和第二栅电极之间以将电荷捕获作为电荷捕获膜的绝缘膜。 第一栅电极包括接触栅极绝缘膜的下部和在第一栅电极的下部上方的上部,并且第一栅电极的上部与第二栅电极之间的距离长于 第一栅电极和第二栅电极的下部。