摘要:
A method of forming a nonvolatile memory device which includes forming a first gate electrode on a gate insulating film formed on a semiconductor substrate. The first gate electrode having a lower portion formed on the gate insulating film and an upper portion having a gate length less than that of the lower portion formed on the lower portion. A spacer is formed contacting surfaces of the upper and lower portions, wherein a length of the spacer and the upper portion equals the length of the lower portion. An electric charge trapping film covers a portion of the semiconductor substrate, a surface of the lower portion, and a surface of the spacer. A second gate electrode is then formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film. The second gate electrode has a distance between the upper portion of the first gate electrode thai is greater than a distance between the lower portion and is separated from the upper portion of the first gate electrode by the electric charge trapping film and the spacer.
摘要:
A method of forming a nonvolatile semiconductor memory device includes forming a semiconductor substrate, forming upper and lower portions of a first gate electrode on a gate insulating film formed on the semiconductor substrate, the lower portion of the first gate electrode formed on the gate insulating film, the upper portion of the first gate electrode formed on the lower portion of the first gate electrode and having a gate length which is less than a gate length of the lower portion of the first gate electrode, forming a spacer insulating film to contact respective surfaces of the upper and lower portions of the first gate electrode, in which a length of the spacer insulating film combined with the gate length of the upper portion of the first gate electrode is equal to the gate length of the lower portion of the first gate electrode, forming an electric charge trapping film covering a portion of the semiconductor substrate, a surface of the lower portion of the first gate electrode, and a surface of the spacer insulating film, and forming a second gate electrode in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film, the second gate electrode having a distance between the upper portion of the first gate electrode that is greater than a distance between the lower portion of the first gate electrode, in which the second gate electrode is separated by the upper portion of the first gate electrode by the electric charge trapping film and the spacer insulating film.
摘要:
The invention relates to a method for hydrolyzing a plant fiber material to produce and separate a saccharide including glucose. The method includes a hydrolysis process of using a cluster acid catalyst in a pseudo-molten state to hydrolyze cellulose contained in the plant fiber material, and produce glucose. The cluster acid catalyst is subjected to a clustering enhancing treatment by which clustering of the cluster acid catalyst in a crystalline state is enhanced.
摘要:
A musical tone information transmitting apparatus that can efficiently transmit musical tone information comprises: a device for inputting musical tone information; a plurality of processing units which jointly process the musical tone information from said input means in distributed processing; a packet generator for measuring an amount of said musical tone information distributedly processed by the plurality of processing units at a predetermined cycle, for extracting and packetizing a predetermined amount of the musical tone information into a first packet when the amount of the musical tone information is greater than the predetermined amount and for further packetizing next musical tone information after said predetermined cycle is lapsed from the time corresponding to the last musical tone information of said first packet; and a device for transmitting said packets generated by said packet generator.
摘要:
The present invention relates to a method of manufacturing a semiconductor device; which comprises the steps of forming, upon a substrate having a plurality of raised sections on the surface, a polysilicon film so as to fill up recesses formed between these raised sections and, through patterning, forming a polysilicon line therefrom; forming a natural oxidation film or an oxide film with a thickness of 1 nm to 3 nm on the surface of said polysilicon line; forming an additional polysilicon film, and thereafter etching back said additional polysilicon film; forming an insulating film thereon, and thereafter forming sidewalls from said insulating film through eteching back; forming a diffusion region on said substrate; and forming a silicide film over said polysilicon line. According to the present invention, a silicide film can be formed evenly over a polysilicon line that is formed on a stepped substrate so that, with this technique, semiconductor devices having excellent characteristics and reliability can be manufactured with a high yield.
摘要:
A digital filter has a cut-off frequency which can be varied by a simple control circuit. The digital filter includes a tap coefficient setting section and a convolution calculation section. The convolution calculation section is constructed so as to repetitively perform the processing of first performing repetitive convolution calculation wherein a same convolution calculation operation is performed once or successively by a plurality of times using same tap coefficients or same input data and then varying the tap coefficient or the input data to allow the repetitive convolution calculation to be repeated subsequently. The digital filter can be applied to an oversampling analog to digital converter.
摘要:
An I-beam is made lighter in weight by corrugating the central portion of its web. Dimension of the corrugating is determined by predetermined experimental equations. The corrugating work is performed by a pair of complementary intermeshing rolls having the same dimensions.
摘要:
One embodiment provides a data transfer device, including: a register configured to set an upper limit value for a transfer data size; and a transfer size controller configured to compare the upper limit value and the transfer data size sent from an external device, and to reduce the transfer data size when the transfer data size is larger than the upper limit value.
摘要:
A gear device in which lubricating oil for cooling and lubricating gears to be driven therein is adjusted to a temperature and an amount suitable for the speed of a vehicle, and a vehicle having the gear device mounted thereon. A transmission adjusts the temperature of lubricating oil by supplying the lubricating oil from a lower part of a housing of the transmission into a heat exchanger by a circulation pump and causing the lubricating oil and engine cooling water to exchange heat with each other in the heat exchanger. A level of the lubricating oil retained in an oil pan when the circulation pump is stopped is defined as a highest oil level, while the level of the lubricating oil retained in the oil pan when the amount of the lubricating oil pumped up by the circulation pump is maximum is defined as a lowest oil level. The heat exchanger is disposed at a position outside the housing and higher than the highest oil level. The transmission includes a device which controls the amount of the oil to be pumped up by the lubricating pump to adjust the height of the level of the oil which varies between the highest oil level and the lowest oil level.
摘要:
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.