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78 条记录 (耗时 0.03 秒)

    Specifically configured sheet members or articles for use in improving sound or image quality
    11.
    发明授权
    Specifically configured sheet members or articles for use in improving sound or image quality 失效
    用于改善声音或图像质量的具体配置的片材成分或物品

    公开(公告)号：US5412541A

    公开(公告)日：1995-05-02

    申请号：US165896

    申请日：1993-12-14

    申请人： Tatsuo Tanaka

    发明人： Tatsuo Tanaka

    IPC分类号： G10K11/36 ,  G11B33/14 ,  G12B17/02 ,  H01L23/04 ,  H04B15/02 ,  H05K1/00 ,  H05K1/02 ,  H05K9/00

    CPC分类号： H04B15/02 ,  H05K9/0098 ,  H05K1/02 ,  H05K1/0216

    摘要： A sheet member adapted for attachment to an acoustic or imaging apparatus to improve the acoustic or imaging performance thereof. The sheet member is generally circular, including a plurality of generally W-shaped cut-outs and a like plurality of generally V-shaped cut-outs both formed alternately and equi-angularly in the outer circumference thereof. The sheet member improves the acoustic or imaging performance by reducing the interference caused by electromagnetic radiations emitted from the acoustic or imaging apparatus or their components to which the sheet member is attached. The reduction of such interference can be attained also by forming a compact disc, a laser disc, a magnetic tape, a semiconductor chip, a circuit board, a magnetic or IC card or the like in a manner to have such cut-outs in their outer circumference.

    摘要翻译： 适于附接到声学或成像设备以改善其声学或成像性能的片材部件。 片状部件通常是圆形的，包括多个大致为W形的切口以及在其外圆周上交替且等角度地形成的多个大致V形的切口。 薄片构件通过减小由声学或成像设备或其附接到片材构件的组件的电磁辐射引起的干扰来改善声学或成像性能。 这样的干扰的减少也可以通过以下方式实现：通过以下方式形成光盘，激光盘，磁带，半导体芯片，电路板，磁性或IC卡等 外圆。

    Selenium electrophotographic photoreceptor
    12.
    发明授权
    Selenium electrophotographic photoreceptor 失效
    SELENIUM电子照相机

    公开(公告)号：US5075188A

    公开(公告)日：1991-12-24

    申请号：US472626

    申请日：1990-01-30

    申请人： Masahiko Kasahara ,  Tatsuo Tanaka ,  Mitsuru Narita

    发明人： Masahiko Kasahara ,  Tatsuo Tanaka ,  Mitsuru Narita

    IPC分类号： G03G5/08 ,  G03G5/043 ,  G03G5/082 ,  G03G5/147

    CPC分类号： G03G5/0433 ,  G03G5/08207 ,  G03G5/14704

    摘要： The present invention provides a seleniumn electrophotographic photoreceptor comprising a laminate of a conductive base, a carrier transportaion layer consisting of amorphous selenium or an amorphous Se-Te alloy, a carrier generation layer consisting of an amorphous Se-Te alloy containing 20 to 50 wt % of Te, and an overcoat layer composed of two layers consisting of Se-As alloys having different arsenic concentrations and different thickenesses. In one embodiment of the invention, the lower overcoat layer contains 2-10% by weight arsenic while the upper overcoat layer contains 10-30% by weight arsenic. In another embodiment of the invention, the thickness of the upper overcoat layer is greater than that of the lower overcoat layer but not more than 8 .mu.m.

    摘要翻译： 本发明提供一种硒电子照相感光体，其包含导电性基体，由无定形硒或非晶Se-Te合金构成的载体输送层的层叠体，由含有20〜50重量％的非晶Se-Te合金的非晶Se-Te合金构成的载体产生层， 的Te，以及由具有不同砷浓度和不同厚度的Se-As合金构成的两层构成的外涂层。 在本发明的一个实施方案中，较低外涂层含有2-10重量％的砷，而上覆盖层含有10-30重量％的砷。 在本发明的另一个实施方案中，上覆盖层的厚度大于较低外涂层的厚度，但不大于8μm。

    Charging/discharging circuit
    13.
    发明授权
    Charging/discharging circuit 失效
    充电/放电电路

    公开(公告)号：US4555655A

    公开(公告)日：1985-11-26

    申请号：US592857

    申请日：1984-03-23

    申请人： Tatsuo Tanaka

    发明人： Tatsuo Tanaka

    IPC分类号： G05F1/618 ,  G05F1/56 ,  G05F1/585 ,  H03H11/24 ,  H03G3/00

    CPC分类号： H03H11/24 ,  G05F1/585

    摘要： A charging/discharging circuit is formed of transistors Q1, Q2; resistors R1-R4; and a capacitor C. The series resistors R1, R2 are connected between the power supply line +Vcc and the circuit ground. The series resistors R3, R4 are connected between the line +Vcc and the circuit ground. The collector of NPN transistor Q1 is connected to +Vcc, the base thereof is connected to the junction between R3 and R4, and the emitter thereof is coupled to the junction between R1 and R2. The collector of PNP transistor Q1 is connected to the circuit ground, the base thereof is connected to the junction between R3 and R4, and the emitter thereof is coupled to the junction between R1 and R2. Capacitor C is connected in parallel to R2. The charged voltage of C is used as a reference potential VR for another linear circuit. Suppose that R1=R2, R3=R4 and +Vcc=10 V. When +Vcc rises from 0 V to 10 V but VR does not reach to 5 V, Q1 is forwardly biased so that C is quickly charged by the emitter current of Q1. When +Vcc falls from 10 V to 0 V but VR does not reach 0 V, Q2 is forwardly biased so that C is quickly discharged by the emitter current of Q2. When VR=5 V (stationary state), Q1 and Q2 are both cut-off, so that only small currents flow through the series circuits of R1, R2 and R3, R4. The time constant of (R1.vertline..vertline.R2).C can be made large so that VR is free from ripples of +Vcc.

    摘要翻译： 充电/放电电路由晶体管Q1，Q2形成; 电阻R1-R4; 和电容器C.串联电阻器R1，R2连接在电源线+ Vcc和电路接地之间。 串联电阻R3，R4连接在线路+ Vcc和电路接地之间。 NPN晶体管Q1的集电极连接到+ Vcc，其基极连接到R3和R4之间的结，其发射极耦合到R1和R2之间的连接处。 PNP晶体管Q1的集电极连接到电路地，其基极连接到R3和R4之间的结，其发射极耦合到R1和R2之间的连接处。 电容器C与R2并联连接。 C的充电电压用作另一线性电路的基准电位VR。 假设R1 = R2，R3 = R4和+ Vcc = 10V。当+ Vcc从0V升至10V但VR不达到5V时，Q1被正向偏置，使得C被发射极电流快速充电 Q1。 当+ Vcc从10V下降到0V而VR不达到0V时，Q2被向前偏置，使得C被Q2的发射极电流快速放电。 当VR = 5 V（静止状态）时，Q1和Q2都截止，只有小电流流过R1，R2和R3，R4的串联电路。 （R1||R2）.C的时间常数可以变大，使得VR没有+ Vcc的波纹。

    Organic electroluminescent element, display device and lighting device
    18.
    发明授权
    Organic electroluminescent element, display device and lighting device 有权
    有机电致发光元件，显示装置和照明装置

    公开(公告)号：US08114532B2

    公开(公告)日：2012-02-14

    申请号：US12442540

    申请日：2008-01-17

    申请人： Tatsuo Tanaka ,  Hiroshi Kita ,  Rie Katakura ,  Hideo Taka

    发明人： Tatsuo Tanaka ,  Hiroshi Kita ,  Rie Katakura ,  Hideo Taka

    IPC分类号： H01J1/62 ,  C07F15/00

    CPC分类号： H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  C09K2211/185 ,  H01L51/0037 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5012 ,  H01L2251/308 ,  H05B33/14 ,  Y10T428/265 ,  Y10T428/31504

    摘要： Disclosed is an organic electroluminescent device having high external quantum efficiency and long life. Also disclosed are an illuminating device and, a display device. The organic electroluminescent device is characterized by containing at least one compound having a partial structure represented by the following general formula (1). [chemical formula 1] (1) In the formula, R1 represents a group (preferably an aromatic hydrocarbon group, an aromatic heterocyclic group, an alkyl group or an alkoxy group) having 4-20 carbon atoms in total and a substituent having a formula weight of 70-350 (preferably an alkyl group or an alkoxy group); R2-R4 independently represent a substituent; n2 represents a number of 0-4; n3 represents a number of 0-2; n4 represents a number of 0-8; and Q represents an atomic group necessary for forming an aromatic hydrocarbon ring or an aromatic heterocyclic ring.

    摘要翻译： 公开了具有高外部量子效率和长寿命的有机电致发光器件。 还公开了照明装置和显示装置。 有机电致发光器件的特征在于含有至少一种具有由以下通式（1）表示的部分结构的化合物。 [化学式1]（1）式中，R1表示总共具有4-20个碳原子的基团（优选芳香族烃基，芳香族杂环基，烷基或烷氧基），具有式 重量为70-350（优选烷基或烷氧基）; R2-R4独立地表示取代基; n2表示0-4的数; n3表示0-2的数; n4表示0-8的数; Q表示形成芳香族烃环或芳香族杂环所必需的原子团。

    Method of manufacturing organic film transistor
    19.
    发明授权
    Method of manufacturing organic film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US08003435B2

    公开(公告)日：2011-08-23

    申请号：US11721523

    申请日：2005-12-13

    申请人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    发明人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

    摘要： A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

    摘要翻译： 一种制造有机薄膜晶体管的方法，其通过简单的涂覆工艺可以在诸如聚合物载体的柔性基底上连续地形成有机TFT，从而可以显着降低制造成本，并且有机物 在通过在载体上依次形成栅电极，栅极绝缘层，有机半导体层，源电极和漏电极来制造有机薄膜晶体管的方法中，有机物 半导体层包含在差示扫描热分析中具有放热点和吸热点的有机半导体材料，并且将如此形成的有机半导体层在不低于放热点且小于吸热点的温度下进行热处理。

    METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR
    20.
    发明申请
    METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US20100178727A1

    公开(公告)日：2010-07-15

    申请号：US11721523

    申请日：2005-12-13

    申请人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    发明人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0068 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

    摘要： A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

    摘要翻译： 一种制造有机薄膜晶体管的方法，其通过简单的涂覆工艺可以在诸如聚合物载体的柔性基底上连续地形成有机TFT，从而可以显着降低制造成本，并且有机物 在通过在载体上依次形成栅电极，栅极绝缘层，有机半导体层，源电极和漏电极来制造有机薄膜晶体管的方法中，有机物 半导体层包含在差示扫描热分析中具有放热点和吸热点的有机半导体材料，并且将如此形成的有机半导体层在不低于放热点且小于吸热点的温度下进行热处理。