Device and method of monolithic integration of microinverters on solar cells

    公开(公告)号:US10778141B2

    公开(公告)日:2020-09-15

    申请号:US15534504

    申请日:2015-12-11

    Abstract: A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.

    FLEXIBLE ELECTRONIC DISPLAY DEVICE
    14.
    发明申请

    公开(公告)号:US20200243799A1

    公开(公告)日:2020-07-30

    申请号:US16752553

    申请日:2020-01-24

    Abstract: A method of fabricating a light emitting device comprises providing a mold having an unpolished surface with an arithmetic mean roughness Ra in a range from 0.1 μm to 10 μm, depositing a thin polymer film over the surface of the mold, wherein the film has a thickness in a range from 1 μm to 100 μm, positioning a light emitting body onto the thin polymer film, wherein the light emitting body includes an anode, a cathode, and a light emitting layer positioned between the anode and the cathode, and separating the thin polymer film with the light emitting body from the mold. A light emitting device is also described.

    Fabrication of thin-film electronic devices with non-destructive wafer reuse

    公开(公告)号:US10535685B2

    公开(公告)日:2020-01-14

    申请号:US15101287

    申请日:2014-12-02

    Abstract: Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

    Organic optoelectronics with electrode buffer layers

    公开(公告)号:US10297775B2

    公开(公告)日:2019-05-21

    申请号:US14417893

    申请日:2013-07-31

    Abstract: There is disclosed an organic optoelectronic device comprising two electrodes in superposed relation comprising an anode and a cathode, at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction, an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, and an intermediate layer adjacent to at least one of the anode and cathode buffer layers, wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer. Also disclosed are methods of making the same.

    Enhancing light extraction of organic light emitting diodes via nanoscale texturing of electrode surfaces

    公开(公告)号:US10211429B2

    公开(公告)日:2019-02-19

    申请号:US15669014

    申请日:2017-08-04

    Abstract: An organic light emitting device is described, having an OLED including an anode, a cathode, and at least one organic layer between the anode and cathode. At least a portion of an electrode surface includes a plurality of scattering structures positioned in a partially disordered pattern resembling nodes of a two dimensional lattice. The scattering structures are positioned around the nodes of the two dimensional lattice with the average distance between the position of each scattering structure and a respective node of the lattice is from 0 to 0.5 of the distance between adjacent lattice nodes. A method of manufacturing an organic light emitting device and a method of enhancing the light-extraction efficiency of an organic light emitting device are also described.

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