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公开(公告)号:US11094902B2
公开(公告)日:2021-08-17
申请号:US15030152
申请日:2014-10-27
Applicant: The Regents of the University of Michigan
Inventor: Stephen R. Forrest , Xiaozhou Che , Xin Xiao
Abstract: A high efficiency small molecule tandem solar cell is disclosed. The tandem cell may include a first subcell comprising a first photoactive region and a second subcell comprising a second photoactive region. The first and second photoactive regions are designed to minimize spectral overlap and maximize photocurrent. The device may further include an interconnecting layer, disposed between the first subcell and the second subcell, that is at least substantially transparent.
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公开(公告)号:US11031569B2
公开(公告)日:2021-06-08
申请号:US16685355
申请日:2019-11-15
Inventor: Stephen R. Forrest , Michael Slootsky , Mark E. Thompson
Abstract: Arrangements and techniques for providing organic emissive layers are provided, in which the emissive layer includes a first dopant having a dissociative energy level. A second dopant in the emissive layer provides a solid state sink energy level, to which doubly excited excitons and/or polarons may transition instead of to the dissociative energy level, thereby decreasing the undesirable effects of transitions to the dissociative energy level.
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公开(公告)号:US10778141B2
公开(公告)日:2020-09-15
申请号:US15534504
申请日:2015-12-11
Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
Inventor: Stephen R. Forrest , Kyusang Lee
IPC: H02S40/32 , H01L31/18 , H01L31/0735 , H01L31/0693
Abstract: A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.
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公开(公告)号:US20200243799A1
公开(公告)日:2020-07-30
申请号:US16752553
申请日:2020-01-24
Applicant: The Regents of the University of Michigan
Inventor: Yue QU , Xiaheng Huang , Stephen R. Forrest
Abstract: A method of fabricating a light emitting device comprises providing a mold having an unpolished surface with an arithmetic mean roughness Ra in a range from 0.1 μm to 10 μm, depositing a thin polymer film over the surface of the mold, wherein the film has a thickness in a range from 1 μm to 100 μm, positioning a light emitting body onto the thin polymer film, wherein the light emitting body includes an anode, a cathode, and a light emitting layer positioned between the anode and the cathode, and separating the thin polymer film with the light emitting body from the mold. A light emitting device is also described.
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15.
公开(公告)号:US10680132B2
公开(公告)日:2020-06-09
申请号:US15111218
申请日:2015-01-15
Applicant: The Regents of the University of Michigan
Inventor: Stephen R. Forrest , Kyusang Lee , Dejiu Fan
IPC: H01L31/00 , H01L31/18 , H01L31/0304 , H01L31/0352 , H01L31/0687 , H01L31/0693 , H01L31/0735
Abstract: The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.
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公开(公告)号:US10535685B2
公开(公告)日:2020-01-14
申请号:US15101287
申请日:2014-12-02
Applicant: The Regents of the University of Michigan
Inventor: Stephen R. Forrest , Kyusang Lee
Abstract: Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.
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公开(公告)号:US10480056B2
公开(公告)日:2019-11-19
申请号:US15719972
申请日:2017-09-29
Applicant: The Regents of the University of Michigan
Inventor: Stephen R. Forrest , Gregory McGraw
Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.
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公开(公告)号:US10297775B2
公开(公告)日:2019-05-21
申请号:US14417893
申请日:2013-07-31
Applicant: The Regents of the University of Michigan
Inventor: Brian Lassiter , Jeramy D. Zimmerman , Stephen R. Forrest
Abstract: There is disclosed an organic optoelectronic device comprising two electrodes in superposed relation comprising an anode and a cathode, at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction, an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, and an intermediate layer adjacent to at least one of the anode and cathode buffer layers, wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer. Also disclosed are methods of making the same.
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19.
公开(公告)号:US10211429B2
公开(公告)日:2019-02-19
申请号:US15669014
申请日:2017-08-04
Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
Inventor: Ardavan Oskooi , Stephen R. Forrest
IPC: H01L51/52 , H01L21/768
Abstract: An organic light emitting device is described, having an OLED including an anode, a cathode, and at least one organic layer between the anode and cathode. At least a portion of an electrode surface includes a plurality of scattering structures positioned in a partially disordered pattern resembling nodes of a two dimensional lattice. The scattering structures are positioned around the nodes of the two dimensional lattice with the average distance between the position of each scattering structure and a respective node of the lattice is from 0 to 0.5 of the distance between adjacent lattice nodes. A method of manufacturing an organic light emitting device and a method of enhancing the light-extraction efficiency of an organic light emitting device are also described.
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公开(公告)号:US10074815B2
公开(公告)日:2018-09-11
申请号:US15086795
申请日:2016-03-31
Inventor: Stephen R. Forrest , Jaesang Lee , Mark E. Thompson
CPC classification number: H01L51/0085 , C09K11/025 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/185 , H01L51/0058 , H01L51/0067 , H01L51/0072 , H01L51/5016 , H01L51/5096 , H01L2251/5346 , H05B33/14 , H05B33/20
Abstract: An organic light emitting device is disclosed in which the emissive dopant material in its organic emissive layer is an organic phosphorescent emissive material and a neat film of the organic phosphorescent emissive material is disposed between the organic emissive layer and the anode as an electron blocking layer.
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