中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

102 records (took 0.032 seconds)

    Methods And Apparatus For Removing Solids From A Membrane Module
    12.
    发明申请
    Methods And Apparatus For Removing Solids From A Membrane Module 有权
    用于从膜模块中去除固体的方法和装置

    公开(公告)号：US20080053923A1

    公开(公告)日：2008-03-06

    申请号：US11575234

    申请日：2005-09-13

    Applicant: Thomas Beck ,  Warren Johnson

    Inventor： Thomas Beck ,  Warren Johnson

    IPC: B01D65/02

    CPC classification number: B01D65/02 ,  B01D61/14 ,  B01D61/18 ,  B01D61/20 ,  B01D63/024 ,  B01D63/043 ,  B01D2313/10 ,  B01D2313/12 ,  B01D2315/06 ,  B01D2321/02 ,  B01D2321/185 ,  C02F1/444

    Abstract: A method of operating a membrane filtration module (5), the module (5) including one or more membranes (7) extending longitudinally between vertically spaced upper and lower headers (8, 9) into which the ends of the membranes (7) are potted. The membranes (7) have a permeable wall which is subjected to a filtration operation wherein feed containing contaminant matter is applied to one side of the membrane wall and filtrate is withdrawn from the other side of the membrane wall. At least one of the upper and/or lower headers (8, 9) has one or more openings (10) therein and the method including flowing the feed, at least in part, through the one or more openings (10) for application to the membrane wall. Apparatus for performing the method is also disclosed.

    Abstract translation: 一种操作膜过滤模块（5）的方法，所述模块（5）包括一个或多个膜（7），所述膜（7）在垂直间隔开的上和下集管（8,9）之间纵向延伸，膜（7）的端部 盆栽。 膜（7）具有渗透壁，其进行过滤操作，其中将含有污染物质的进料施加到膜壁的一侧，并且滤液从膜壁的另一侧排出。 上集管和/或下集管（8,9）中的至少一个在其中具有一个或多个开口（10），并且所述方法包括至少部分地通过所述一个或多个开口（10）使进料流动以用于 膜壁。 还公开了用于执行该方法的装置。

    Holder for holding a metal component part of a turbine
    13.
    发明申请
    Holder for holding a metal component part of a turbine 审中-公开
    用于保持涡轮机的金属部件的支架

    公开(公告)号：US20070274831A1

    公开(公告)日：2007-11-29

    申请号：US11651378

    申请日：2007-01-09

    Applicant: Thomas Beck ,  Thomas Berndt ,  Gerhard Reich ,  Helge Reymann

    Inventor： Thomas Beck ,  Thomas Berndt ,  Gerhard Reich ,  Helge Reymann

    IPC: F01D5/18

    CPC classification number: C23C16/12 ,  C23C16/045 ,  C23C16/45563 ,  F01D5/187 ,  F01D5/288 ,  F01D25/285 ,  Y02T50/67 ,  Y02T50/676

    Abstract: A holder for holding a metal component part, which has at least one internal passage which is accessible by an opening in an external surface of the component part. The holder is equipped with a bearing element, which comprises a bearing surface, which is designed in such a way that it allows a seating of the component part on the bearing element, and in this case serves as a support for at least a part of the external surface of the component part which has the opening, and a flow passage, which leads through the bearing element, with at least one outlet opening located in the bearing surface. The outlet opening is located in the bearing surface in such a way that, with the component part seated, it lies opposite the opening of the internal passage. Furthermore, the outlet opening in shape and flow cross section is adapted to the opening of the internal passage.

    Abstract translation: 用于保持金属部件的保持器，其具有至少一个内部通道，该内部通道可由组件的外表面中的开口接近。 支架装有轴承元件，该轴承元件包括轴承表面，该轴承表面被设计成使得该元件可以将元件部件安置在轴承元件上，并且在这种情况下用作至少一部分的支撑件 具有开口的部件的外表面和通过轴承元件的流动通道，其中至少一个出口开口位于支承表面中。 出口开口位于支承表面中，使得在组件部分就座的情况下，其与内部通道的开口相对。 此外，形状和流动横截面的出口开口适于内部通道的打开。

    DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS
    19.
    发明授权
    DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS 有权
    使用等离子体蚀刻安装的基板的高频蚀刻的装置和方法以及用于点燃等离子体并用于脉冲等离子体输出或调整相同UPWARDS的方法

    公开(公告)号：US06720273B1

    公开(公告)日：2004-04-13

    申请号：US09763138

    申请日：2001-04-20

    Applicant: Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

    Inventor： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

    IPC: H01L213065

    CPC classification number: H01J37/32174 ,  C30B33/12 ,  H01J37/32082 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085 ,  H01L21/3086

    Abstract: A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma (14), is proposed. In the process, the plasma (14) is produced by a plasma source (13) to which a high-frequency generator (17) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source (13). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator (17) to the prevailing impedance of the plasma source (13) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source (13) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma (14) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.

    Abstract translation: 提出了一种借助于等离子体（14）能够进行优选地各向异性地蚀刻衬底（10）特别是图案化硅体的装置和方法。 在该过程中，等离子体（14）由连接有高频发生器（17）的等离子体源（13）产生，以施加高频电力。 此外，该高频发生器与周期性地改变施加到等离子体源（13）的高频功率的第一装置通信。 此外，优选地对于将高频发生器（17）的输出阻抗适配为等离子体源（13）的主要阻抗（其随高频功率变化而变化）的第二装置进行设置。 所提出的各向异性蚀刻方法在分离和交替的蚀刻和聚合步骤中进行，在蚀刻步骤期间至少暂时施加高达5000瓦特的高频功率至等离子体源（13）比在沉积期间更高 脚步。 所提出的装置还适用于点燃等离子体（14）并且用于将等离子体功率从起始值向上调节或脉冲至高达5000瓦特。

Patent Agency Ranking