摘要:
The invention provides an electro-optical device that can include a plurality of scanning lines, a plurality of signal lines, a plurality of pixels arranged corresponding to intersections of the scanning lines and the signal lines, and heat-release sections. The pixels can each include corresponding transistors and corresponding light-emitting elements, the light-emitting elements emit light in the direction that light is withdrawn, and the heat-release sections include heat release portions, located on the side opposite to the light-withdrawing direction of the light-emitting elements, having electrical conductivity. Accordingly, the invention can enhance the environmental resistance of an electro-optical device including light-emitting elements.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
An electro-optical device includes a pixel circuit, and a driving circuit. The pixel circuit includes a driving transistor, a first capacitive element, an electro-optical element, and a switch. The driving circuit controls the switch to be turned off, varies a potential such that the driving transistor is turned on, during a first period, sets a potential at a control terminal to a compensation initial value by controlling the switch to be turned on, during a second period, supplies a grayscale potential corresponding to a designated grayscale, varies a driving potential such that the driving transistor is turned on, during a third period, and varies a voltage between the control terminal and a first terminal with the passage of time, during a fourth period.
摘要:
A method for driving a light-emitting device in which a plurality of pixel circuits are arranged in correspondence with the intersection of a plurality of scanning lines and a plurality data lines, the pixel circuit having a light-emitting element and a driving transistor that controls the current amount of a driving current flowing the light-emitting device, comprises repeating the process within unit period including a first period and a second period following the first period, wherein the second period process includes selecting one scanning line of the plurality of scanning lines, and supplying and holding a data voltage corresponding to the luminance of the light-emitting element to a gate of the driving transistor via the data lines with respect to the plurality pixel circuits connected the selected scanning lines, and wherein the first period process includes selecting two or more scanning lines of the plurality of scanning lines, and correcting the unbalance of the driving current output from the driving transistor in the plurality of pixel circuits connected to the selected scanning lines.
摘要:
To reduce time for writing a target voltage in the gate of a driving transistor. In a first period, a transistor 211 is switched on to allow a driving transistor 210 to function as a diode and transistors 212 and 213 are switched on to electrically connect the drain of the driving transistor 210 to a data line 112, to which an initial voltage is applied, such that the initial voltage is applied to the gate of the driving transistor 210. In a second period, a transistor 212 is switched off such that the gate of the driving transistor 210 is maintained to have an off voltage corresponding to the power source. In a third period, the transistor 211 is switched off such that the voltage of the data line 112 is converted into a grayscale voltage to maintain the gate of the driving transistor at the target voltage. In a fourth period, the driving transistor 210 flows the current corresponding to the maintained gate voltage to an OLED element 230.
摘要:
A method of manufacturing an electro-optical device having a plurality of unit regions arranged in a matrix on a surface of a flat plate-shaped base substrate. In each of the plurality of unit regions, a pixel electrode is formed. A counter electrode is formed on an opposite side to the base substrate with respect to the pixel electrodes. In pixel regions, which are first unit regions constituting a predetermined image among the plurality of unit regions, OLED elements are selectively formed. The OLED elements are interposed between the respective pixel electrodes and the counter electrode. In non-pixel regions, which are second unit regions other than the first unit regions among the plurality of unit regions, insulators are formed. The insulators are interposed between the respective pixel electrodes and the counter electrode.
摘要:
The present invention provides a systems and methods to perform an electrical test on a substrate assembly used as a TFT array substrate of a liquid-crystal device without detaching a mounted external IC. The substrate assembly can include a substrate, a peripheral circuit embedded in the substrate, a first wiring arranged on the substrate, and an external IC, mounted on the substrate, and having a first terminal connected to an interconnection portion arranged on the first wiring. The substrate assembly can further include a second wiring which extends from the interconnection portion in such a manner that the second wiring is routed in a portion of the substrate facing the integrated circuit, and a first external circuit connection terminal arranged on the second wiring in a portion of the substrate not facing the integrated circuit. The external IC is thus tested through the external circuit connection terminal.