公开(公告)号：US20160075560A1

公开(公告)日：2016-03-17

申请号：US14947659

申请日：2015-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Takashi MATSUMOTO ,  Daisuke NISHIDE

IPC: C01B31/04 ,  C23C16/26 ,  C23C16/50

CPC classification number: C01B32/186 ,  C01B2204/32 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574

Abstract: A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.

Abstract translation: 能够增加石墨烯每个畴的尺寸的石墨烯制造方法。 一种激活形成在晶片上的催化剂金属层的等离子体CVD膜形成装置; 将其改变为活化的催化剂金属层; 在与晶片相对的空间中通过等离子体分解C2H4气体作为低反应性含碳气体; 并通过空间中的热量将C2H2气体分解为高反应性含碳气体。