公开(公告)号：US20230245870A1

公开(公告)日：2023-08-03

申请号：US18101676

申请日：2023-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroyuki MATSUURA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32541 ,  C23C16/45536 ,  C23C16/46 ,  H01J2237/201 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

公开(公告)号：US20230053083A1

公开(公告)日：2023-02-16

申请号：US17882834

申请日：2022-08-08

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Takeshi ANDO ,  Takeshi KOBAYASHI

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/509 ,  C23C16/44

Abstract: A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

公开(公告)号：US20200378005A1

公开(公告)日：2020-12-03

申请号：US16883598

申请日：2020-05-26

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Kiyotaka ISHIBASHI

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/673 ,  C23C16/458 ,  C23C16/34 ,  C23C16/44

Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.