公开(公告)号：US20220223403A1

公开(公告)日：2022-07-14

申请号：US17456680

申请日：2021-11-29

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Jinseok KIM

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/52

Abstract: A deposition method of depositing a silicon nitride film on a surface of a substrate includes: (a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H); (b) exposing the substrate to a plasma formed from hydrogen (H2) gas; (c) exposing the substrate to a plasma formed from a process gas containing a halogen; (d) supplying trisilylamine (TSA) to the substrate; and (e) repeating (a) to (d) in this order.

公开(公告)号：US20220020571A1

公开(公告)日：2022-01-20

申请号：US17370024

申请日：2021-07-08

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Qingzhen WEN

IPC: H01J37/32 ,  G01K7/02 ,  G01K1/08 ,  G01K1/02

Abstract: A temperature sensor includes: a thermocouple having a temperature measurement contact in a processing container in which a plasma processing is performed, and configured to measure a temperature inside the processing container; a protective tube configured to accommodate and protect the thermocouple; and an electromagnetic shield provided in the protective tube to cover the thermocouple.

公开(公告)号：US20210142988A1

公开(公告)日：2021-05-13

申请号：US17084912

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

Abstract: A plasma processing apparatus includes: a processing container extended in a longitudinal direction; a raw material gas supply configured to supply a raw material gas into the processing container; a plasma partition wall provided along the longitudinal direction of the processing container, defining a plasma generation space therein, and having an opening through which the plasma generation space and an inside of the processing container communicate with each other; a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the plasma generation space; and an opening/closing unit configured to open/close the opening.

公开(公告)号：US20210057217A1

公开(公告)日：2021-02-25

申请号：US16993500

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/511

Abstract: A heat treatment method includes: forming an amorphous silicon film having a hydrogen concentration in a film of 5×1019 atoms/cm3 or more, on a substrate; and irradiating the substrate with microwaves to heat the amorphous silicon film thereby forming a polycrystalline silicon film from the amorphous silicon film.

公开(公告)号：US20220020572A1

公开(公告)日：2022-01-20

申请号：US17361572

申请日：2021-06-29

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Takeshi ANDO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a cylindrical processing chamber with a sidewall having an opening, to accommodate substrates on respective stages. The plasma processing apparatus includes a plasma compartment wall with an outer surface, the plasma compartment wall being hermetically provided at the sidewall of the processing chamber to close the opening of the sidewall of the processing chamber, and the plasma compartment wall defining a plasma formation space. The plasma processing apparatus includes a first plasma electrode pair consisting of first electrodes, the first electrodes being arranged opposite each other, on opposite sides of the outer surface of the plasma compartment wall. The plasma processing apparatus includes a second plasma electrode pair consisting of second electrodes, the second electrodes being arranged opposite each other, on the opposite sides of the outer surface of the plasma compartment wall.

公开(公告)号：US20150007772A1

公开(公告)日：2015-01-08

申请号：US14312137

申请日：2014-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei FUKUSHIMA ,  Hiroyuki MATSUURA ,  Yutaka MOTOYAMA ,  Koichi SHIMADA ,  Takeshi ANDO

IPC: C23C16/509

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32779

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

Abstract translation: 基板处理装置包括：被配置为被抽真空的处理容器; 保持单元，其构造成保持多个基板并插入到处理容器中或与处理容器分离; 气体供给单元，其构造成将气体供给到所述处理容器内; 由等离子体隔壁分隔和形成的等离子体产生箱; 电感耦合电极，位于等离子体发生箱的沿其长度方向的外侧壁; 高频电源，通过馈电线连接到电感耦合电极; 位于等离子体生成箱的外部，处理容器与电感耦合电极之间的配置在等离子体生成箱的外侧壁附近，或至少部分地与外侧壁接触的接地电极。

公开(公告)号：US20240018660A1

公开(公告)日：2024-01-18

申请号：US18218441

申请日：2023-07-05

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA

IPC: C23C16/52 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/52 ,  H01J37/32449 ,  C23C16/45544 ,  C23C16/45536 ,  H01J37/32568 ,  H01J2237/3321

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.

公开(公告)号：US20240014013A1

公开(公告)日：2024-01-11

申请号：US18217885

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Hiroyuki MATSUURA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/201 ,  H01J2237/332 ,  H01L21/32051

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

公开(公告)号：US20240170265A1

公开(公告)日：2024-05-23

申请号：US18388974

申请日：2023-11-13

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32715

Abstract: The plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and places a plurality of substrates in multiple tiers, a rotation shaft that rotates the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhauster that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container to face each other across a center of the processing container, and a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container.

公开(公告)号：US20240014005A1

公开(公告)日：2024-01-11

申请号：US18217896

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Nobuo MATSUKI ,  Taro IKEDA

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J37/3417

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.