公开(公告)号：US20210005502A1

公开(公告)日：2021-01-07

申请号：US16909228

申请日：2020-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  C23C16/455

Abstract: A stage on which a substrate is mounted, includes a stage body having an upper surface on which the substrate is mounted, a cover member configured to cover an outer edge portion of the upper surface of the stage body, and a positional deviation preventing member provided between the upper surface of the stage body and a lower surface of the cover member and configured to roll or slide. A body-side recess configured to accommodate the positional deviation preventing member is formed on the upper surface of the stage body. A cover-side recess configured to accommodate the positional deviation preventing member accommodated in the body-side recess is formed on the lower surface of the cover member. At least one of the body-side recess and the cover-side recess is formed in a bowl shape having an inclined surface extending along a radial direction of the stage body.

公开(公告)号：US20190284687A1

公开(公告)日：2019-09-19

申请号：US16353213

申请日：2019-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya MIYAHARA ,  Masahisa WATANABE ,  Sena FUJITA

IPC: C23C16/44 ,  H01L21/02 ,  C23C16/40 ,  C23C16/34

Abstract: In a method of cleaning a film-forming apparatus, having a processing container configured to accommodate a substrate therein and to perform film-forming processing in a state in which a pressure-reduced atmosphere is formed therein and a pressure gauge configured to monitor a pressure in the processing container, the method includes supplying a cleaning gas for removing a film formed by the film-forming processing to an inside of the processing container in which the film-forming processing has been performed and to the pressure gauge.

公开(公告)号：US20170263455A1

公开(公告)日：2017-09-14

申请号：US15451466

申请日：2017-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahisa WATANABE ,  Hiroshi KUBOTA

IPC: H01L21/033 ,  C23C16/455 ,  C23C16/52 ,  C23C16/46 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C23C16/08 ,  C23C16/36 ,  C23C16/402 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02142 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/0332 ,  H01L21/31144

Abstract: There is provided a method of forming an etching-purpose mask structure on an insulating film containing silicon and oxygen, which includes: forming an intermediate film containing silicon, carbon, nitrogen and hydrogen as main components by supplying a first process gas onto the insulating film formed on a substrate; and subsequently, forming a tungsten film by supplying a second process gas containing a compound of tungsten to the substrate to replace some of silicon constituting the intermediate film with tungsten.