公开(公告)号：US20200035508A1

公开(公告)日：2020-01-30

申请号：US16514989

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI

IPC: H01L21/3213 ,  H01L21/02

Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.

公开(公告)号：US20190267236A1

公开(公告)日：2019-08-29

申请号：US16283138

申请日：2019-02-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/28 ,  C23C16/30 ,  C23C16/52 ,  C23C16/56 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B25/16

Abstract: There is provided a method of forming a silicon film, a germanium, or a silicon germanium film on a surface to be processed of a workpiece, which has single crystalline silicon, single crystalline germanium, or single crystalline silicon germanium as the surface to be processed, includes: a first process of preparing the workpiece; a second process of adsorbing a halogen element on the surface to be processed of the workpiece; and a third process of forming an amorphous silicon film, an amorphous germanium film, or an amorphous silicon germanium film on the surface to be processed of the workpiece by supplying a source gas for forming a silicon film, a germanium film, or a silicon germanium film to the workpiece.

公开(公告)号：US20190043719A1

公开(公告)日：2019-02-07

申请号：US16046222

申请日：2018-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Hiroyuki HAYASHI ,  Hsiulin TSAI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

公开(公告)号：US20180179625A1

公开(公告)日：2018-06-28

申请号：US15852668

申请日：2017-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Katsuhiko KOMORI ,  Mitsuhiro OKADA ,  Masahisa WATANABE ,  Kazuya TAKAHASHI ,  Kazuki YANO ,  Keisuke FUJITA

IPC: C23C16/24 ,  H01L21/22 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/205 ,  H01L21/22 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67303

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.