公开(公告)号：US20150017811A1

公开(公告)日：2015-01-15

申请号：US14371584

申请日：2012-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masaki Inoue ,  Toshihisa Ozu ,  Takehiro Tanikawa ,  Jun Yoshikawa

IPC: H01L21/3065 ,  H01L29/49

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/4916 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

Abstract translation: 示例性实施例提供了一种蚀刻待处理的基体中的第二层的方法，该第一层具有包含Ni和Si的第一层和暴露于其表面的含有Si和N的第二层。 根据示例性实施例的方法包括（a）在处理室中准备待加工的基体，以及（b）将含有碳和氟但不含氧的第一处理气体供应到处理室中并产生等离子体 处理室。

公开(公告)号：US12230483B2

公开(公告)日：2025-02-18

申请号：US18178801

申请日：2023-03-06

Applicant: Tokyo Electron Limited

Inventor： Takehiro Tanikawa

IPC: H01J37/32

Abstract: A stage includes a base and an electrostatic chuck provided on the base and including N electrodes in the electrostatic chuck, where N is an integer greater than or equal to two. The stage a power supply configured to apply voltages of different N-phases to the respective N electrodes. Each of the voltages has a positive level and a negative level that periodically alternate. A center line of an electrode gap provided between adjacent electrodes is represented by x=x=r·cos(θ+2π(n−1)/N) and y=r·sin(θ+2π(n−1)/N).

公开(公告)号：US10923328B2

公开(公告)日：2021-02-16

申请号：US16012852

申请日：2018-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro Tanikawa ,  Shinji Kawada ,  Takayuki Semoto

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

公开(公告)号：US20200373130A1

公开(公告)日：2020-11-26

申请号：US16877853

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Takehiro Tanikawa ,  Shuhei Yamabe ,  Yohei Uchida ,  Yasuharu Sasaki

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

公开(公告)号：US20140312767A1

公开(公告)日：2014-10-23

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。