公开(公告)号：US11978614B2

公开(公告)日：2024-05-07

申请号：US16903571

申请日：2020-06-17

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Jun Young Chung ,  Shuhei Yamabe ,  Keiichi Yamaguchi ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/32743 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed at an inner side than the sidewall and configured to open or close the opening, the shutter having a flow path for a temperature-controlled fluid.

公开(公告)号：US11984300B2

公开(公告)日：2024-05-14

申请号：US16877853

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Takehiro Tanikawa ,  Shuhei Yamabe ,  Yohei Uchida ,  Yasuharu Sasaki

IPC: H01L21/00 ,  H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32532 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

公开(公告)号：US11869750B2

公开(公告)日：2024-01-09

申请号：US17272771

申请日：2019-08-23

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Takehiro Tanikawa ,  Shuhei Yamabe ,  Yuki Machida ,  Jun Young Chung

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32504

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

公开(公告)号：US11264260B2

公开(公告)日：2022-03-01

申请号：US16409441

申请日：2019-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro Tanikawa

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  B08B5/02 ,  B08B6/00

Abstract: A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.

公开(公告)号：US10825662B2

公开(公告)日：2020-11-03

申请号：US16411559

申请日：2019-05-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rumiko Moriya ,  Takanori Banse ,  Suguru Sato ,  Yuuji Akiduki ,  Takehiro Tanikawa

IPC: H01J37/32 ,  H01L21/687 ,  G01S17/08 ,  H01J37/22 ,  H01L21/67 ,  G01S17/06 ,  H01L21/683

Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

公开(公告)号：US09892951B2

公开(公告)日：2018-02-13

申请号：US14387654

申请日：2012-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro Tanikawa ,  Kazuki Moyama

IPC: B08B9/00 ,  H01L21/683 ,  H01J37/32 ,  C23C16/44 ,  H01L21/3213

CPC classification number: H01L21/6831 ,  C23C16/4401 ,  H01J37/32192 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32137 ,  Y10T29/49998

Abstract: A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.

公开(公告)号：US09048070B2

公开(公告)日：2015-06-02

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。

公开(公告)号：US11257691B2

公开(公告)日：2022-02-22

申请号：US16394320

申请日：2019-04-25

Applicant: Tokyo Electron Limited

Inventor： Takehiro Tanikawa

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  H01R13/24

Abstract: There is provision of a substrate processing apparatus including an inner edge ring provided in a vicinity of a substrate to be placed on a stage in a processing chamber; a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism; an outer edge ring arranged outside the middle edge ring; a first spring provided between the inner edge ring and the middle edge ring; and a second spring provided between the middle edge ring and the outer edge ring.

公开(公告)号：US09728417B2

公开(公告)日：2017-08-08

申请号：US14371584

申请日：2012-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masaki Inoue ,  Toshihisa Ozu ,  Takehiro Tanikawa ,  Jun Yoshikawa

IPC: H01L21/302 ,  H01L21/461 ,  H01B13/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/311 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/4916 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

公开(公告)号：US20150075566A1

公开(公告)日：2015-03-19

申请号：US14387654

申请日：2012-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro Tanikawa ,  Kazuki Moyama

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6831 ,  C23C16/4401 ,  H01J37/32192 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32137 ,  Y10T29/49998

Abstract: A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.

Abstract translation: 控制微粒对待处理基板的粘附的方法包括：在待处理基板被携带到处理容器之前，将电压施加到静电卡盘，静电卡盘构造成在加工容器中静电吸引待处理的基板; 并且在向静电卡盘施加电压之后，将要处理的基板运送到处理容器中。 此外，在向静电卡盘施加电压时，向静电卡盘施加电压以减小聚焦环和待处理基板之间的电位差，聚焦环设置成围绕静电卡盘。