公开(公告)号：US20240014031A1

公开(公告)日：2024-01-11

申请号：US18345134

申请日：2023-06-30

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE ,  Keisuke SUZUKI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/52

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  C23C16/345 ,  C23C16/52

Abstract: With respect to a film deposition method of depositing a silicon nitride film doped with a desired metal on a substrate, the film deposition method includes (a) supplying a silicon-containing gas into a processing chamber in which the substrate is accommodated, (b) supplying a metal-containing gas into the processing chamber, the metal-containing gas containing the desired metal, (c) supplying a nitrogen-containing gas into the processing chamber, after performing (a) at least once and performing (b) at least once.

公开(公告)号：US20230420249A1

公开(公告)日：2023-12-28

申请号：US18333724

申请日：2023-06-13

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE ,  Keisuke SUZUKI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01L21/0228 ,  H01L21/02123 ,  H01L21/02178 ,  C23C16/45544 ,  C23C16/45527 ,  C23C16/4408

Abstract: A film forming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.

公开(公告)号：US20170342548A1

公开(公告)日：2017-11-30

申请号：US15599622

申请日：2017-05-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU ,  Masayuki KITAMURA ,  Yosuke WATANABE ,  Akinobu KAKIMOTO

IPC: C23C16/02 ,  C23C16/26 ,  C23C16/52 ,  H01L21/285

CPC classification number: C23C16/0272 ,  C23C16/26 ,  C23C16/52 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304

Abstract: There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, pyrolyzing the hydrocarbon-based carbon source gas by heating the hydrocarbon-based carbon source gas at a temperature lower than a pyrolysis temperature of the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD method. An iodine-containing gas is used as the pyrolysis temperature drop gas.