公开(公告)号：US20220246429A1

公开(公告)日：2022-08-04

申请号：US17647996

申请日：2022-01-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke WATANABE ,  Shota CHIDA

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/56

Abstract: A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times.

公开(公告)号：US20240014031A1

公开(公告)日：2024-01-11

申请号：US18345134

申请日：2023-06-30

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE ,  Keisuke SUZUKI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/52

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  C23C16/345 ,  C23C16/52

Abstract: With respect to a film deposition method of depositing a silicon nitride film doped with a desired metal on a substrate, the film deposition method includes (a) supplying a silicon-containing gas into a processing chamber in which the substrate is accommodated, (b) supplying a metal-containing gas into the processing chamber, the metal-containing gas containing the desired metal, (c) supplying a nitrogen-containing gas into the processing chamber, after performing (a) at least once and performing (b) at least once.

公开(公告)号：US20230420249A1

公开(公告)日：2023-12-28

申请号：US18333724

申请日：2023-06-13

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE ,  Keisuke SUZUKI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01L21/0228 ,  H01L21/02123 ,  H01L21/02178 ,  C23C16/45544 ,  C23C16/45527 ,  C23C16/4408

Abstract: A film forming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.

公开(公告)号：US20230245882A1

公开(公告)日：2023-08-03

申请号：US18161298

申请日：2023-01-30

Applicant: Tokyo Electron Limited

Inventor： Yosuke WATANABE ,  Ryoun SHIMAMOTO ,  Shota CHIDA

IPC: H01L21/02 ,  H01L21/67 ,  C23C28/04

CPC classification number: H01L21/02271 ,  H01L21/02115 ,  H01L21/67098 ,  H01L21/02205 ,  C23C28/04 ,  H01L21/02304

Abstract: A deposition method includes: forming a seed layer on a substrate; and forming a carbon film on the seed layer. The forming the seed layer includes: supplying an aminosilane-based gas to the substrate to form a Si—H bond on a surface of the substrate; and supplying a boron-containing gas to the substrate to form a B—H bond on the surface on which the Si—H bond is formed.

公开(公告)号：US20220235457A1

公开(公告)日：2022-07-28

申请号：US17648950

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455

Abstract: A method for depositing a boron nitride film is provided. In the method, a seed layer is formed on a surface of a substrate by supplying an aminosilane gas to the surface of the substrate. The surface of the substrate includes bases having different incubation times for depositing a boron nitride film. A boron nitride film is deposited on the seed layer.