公开(公告)号：US20230175115A1

公开(公告)日：2023-06-08

申请号：US17922255

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Shuji AZUMO ,  Kota UMEZAWA ,  Katsutoshi ISHII ,  Akira SHIMIZU ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yasuyuki SHIRAI ,  Takezo MAWAKI

IPC: C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  C23C16/34 ,  C23C16/40 ,  C23C16/36 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/02 ,  H01L21/0206 ,  H01L21/02312 ,  H01L21/02205 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02181 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/28568 ,  C23C16/34 ,  C23C16/401 ,  C23C16/36 ,  C23C16/345 ,  C23C16/403 ,  C23C16/405 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/02271 ,  H01L21/0228

Abstract: A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.

公开(公告)号：US20190074177A1

公开(公告)日：2019-03-07

申请号：US16123416

申请日：2018-09-06

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Akira SHIMIZU ,  Katsutoshi ISHII ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yoshinobu SHIBA

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/48

Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

公开(公告)号：US20150354060A1

公开(公告)日：2015-12-10

申请号：US14725640

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/30 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45534

Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.

Abstract translation: 通过在真空室内形成的真空气氛中堆叠基板表面上的氧化物分子层来形成薄膜的成膜装置包括：源气体供给单元，将含有源的源气体供给到基板; 气氛气体供给单元，向真空室供给气氛气体; 能量供应单元向臭氧气氛供应能量; 控制单元，被配置为输出用于重复执行包括源气体的供应，气氛气体的供给和能量供给多次的循环的控制信号; 连接到真空室的缓冲区，向缓冲区供给惰性气体; 以及分隔单元，相对于真空室分隔缓冲区域，并使缓冲区域与真空室连通。

公开(公告)号：US20150235846A1

公开(公告)日：2015-08-20

申请号：US14623160

申请日：2015-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiyuki IKEUCHI ,  Akira SHIMIZU

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02211 ,  H01L21/0228

Abstract: A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

Abstract translation: 氧化硅膜形成方法包括：形成非晶硅膜，其包括：通过将含氯和硅的源气体供应到容纳所述工件的反应室中，将含有硅的吸附物吸附到工件上，活化所述源气体，并使所述活化的 源气与工件; 通过向反应室内供给氢气，使氢气活化，并使活性氢气与被吸附物质反应而除去被吸附物中含有的氯，其中，在吸附了吸附物质后，进行氯的除去，从而形成非晶硅膜 在工件上; 并且通过向反应室中供给氧化气体并氧化非晶硅膜，在工件上形成氧化硅膜，其中形成非晶硅膜并形成氧化硅膜多次重复。

公开(公告)号：US20170342548A1

公开(公告)日：2017-11-30

申请号：US15599622

申请日：2017-05-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU ,  Masayuki KITAMURA ,  Yosuke WATANABE ,  Akinobu KAKIMOTO

IPC: C23C16/02 ,  C23C16/26 ,  C23C16/52 ,  H01L21/285

CPC classification number: C23C16/0272 ,  C23C16/26 ,  C23C16/52 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304

Abstract: There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, pyrolyzing the hydrocarbon-based carbon source gas by heating the hydrocarbon-based carbon source gas at a temperature lower than a pyrolysis temperature of the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD method. An iodine-containing gas is used as the pyrolysis temperature drop gas.

公开(公告)号：US20170314123A1

公开(公告)日：2017-11-02

申请号：US15581475

申请日：2017-04-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU

IPC: C23C16/34 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45551

Abstract: A method of filling a recess with a nitride film is performed by repeating a cycle. The cycle includes a film-forming raw material gas adsorption process of adsorbing a raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess is formed on its surface, and a nitriding process of nitriding the adsorbed raw material gas by nitriding species to fill the recess. At least a portion of a period for forming the nitride film is used as a bottom-up growth period, for which a polymer material adsorbable to the surface of the target substrate is supplied in a gaseous state and is adsorbed to an upper portion of the recess to inhibit adsorption of the film-forming raw material gas, and for which the nitride film is grown from a bottom portion of the recess.

公开(公告)号：US20170125238A1

公开(公告)日：2017-05-04

申请号：US15341767

申请日：2016-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Akira SHIMIZU

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.

公开(公告)号：US20150167171A1

公开(公告)日：2015-06-18

申请号：US14573765

申请日：2014-12-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Akira SHIMIZU

IPC: C23C16/511 ,  C23C16/513

CPC classification number: C23C16/511 ,  C23C16/308 ,  C23C16/345 ,  C23C16/452 ,  H01J37/32082 ,  H01J37/32348 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32816

Abstract: A processing apparatus includes: a first active species generation unit including a first generation chamber where first active species are generated from a first gas by using silent discharge; a second active species generation unit including a second generation chamber where second active species are generated from a second gas by using at least one of inductively coupled plasma, capacitively coupled plasma and microwave plasma, the second active species generation unit being located downstream from the first active species generation unit and the first active species being supplied from the first generation chamber to the second generation chamber; and a processing chamber where a process is performed on an object to be processed by using the first and second active species supplied from the second generation chamber, the processing chamber being located downstream from the second active species generation unit.

Abstract translation: 一种处理装置，包括：第一活性物种生成单元，其包括第一生成室，其中通过使用静音放电从第一气体产生第一活性物质; 第二活性物种产生单元，其包括第二代室，其中通过使用电感耦合等离子体，电容耦合等离子体和微波等离子体中的至少一种从第二气体产生第二活性物质，所述第二活性物种产生单元位于第一 活性物种生成单元和从第一代室供应到第二代室的第一活性物质; 以及处理室，其中通过使用从第二代室提供的第一和第二活性物质对待处理物体进行处理，处理室位于第二活性物种生成单元的下游。

公开(公告)号：US20150118865A1

公开(公告)日：2015-04-30

申请号：US14525250

申请日：2014-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU

IPC: H01L21/02

CPC classification number: H01L21/0214 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45531 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/0228

Abstract: A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.

Abstract translation: 一种形成硅碳氮氧化物膜的方法包括将含有含氧基团的硅前体的气体供给到工件的工艺表面上，将含有碳前体的气体供给到工艺表面上，并将氮化气体供应到工艺 表面经过供给含有硅前体的气体，并供给含有碳前体的气体。 通过供给包含硅前体的气体，含有碳前体的供给气体和不进行氧化处理而供给氮化气体，在工序表面上形成硅碳氮氧化物膜。

公开(公告)号：US20130340678A1

公开(公告)日：2013-12-26

申请号：US13925333

申请日：2013-06-24

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Akira SHIMIZU

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C09K3/00 ,  C10L1/328 ,  C23C14/243 ,  C23C14/246 ,  C23C14/26 ,  C23C16/405 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45525 ,  C23C16/52 ,  F16K13/10 ,  F17D1/16 ,  F17D1/17 ,  Y10T137/6416

Abstract: Provided is a gas supply apparatus which includes a raw material gas supply system for supplying a raw material gas into a processing container, a tank to store a liquid raw material, a main heating unit for heating the bottom and sides of the tank, a ceiling heating unit for heating a ceiling portion of the tank, a main temperature measurement unit for measuring a temperature of a region of the main heating unit, a ceiling temperature measurement unit for measuring a temperature of the ceiling heating unit, a liquid phase temperature measurement unit for measuring a temperature of the liquid raw material, a vapor phase temperature measurement unit for measuring a temperature of a vapor phase portion in the upper part of the tank, a level measurement unit for measuring a liquid level of the liquid raw material, and a temperature control unit for controlling the heating units.

Abstract translation: 提供一种气体供给装置，其包括用于将原料气体供给到处理容器中的原料气体供给系统，储存液体原料的罐，用于加热罐的底部和侧面的主加热单元， 用于加热罐顶部的加热单元，用于测量主加热单元的区域的温度的主温度测量单元，用于测量天花板加热单元的温度的上限温度测量单元，液相温度测量单元 用于测量液体原料的温度，用于测量罐上部气相部分的温度的气相温度测量单元，用于测量液体原料的液位的液面测量单元，以及 用于控制加热单元的温度控制单元。