公开(公告)号：US20170170065A1

公开(公告)日：2017-06-15

申请号：US15377141

申请日：2016-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KITAMURA ,  Akira SHIMIZU ,  Yosuke WATANABE

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/52 ,  H01L21/285 ,  C23C16/26

CPC classification number: C23C16/46 ,  C23C16/045 ,  C23C16/26 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76877

Abstract: A carbon film forming method including: forming a first carbon film so that the first carbon film is embedded in the step shape portion by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object; etching the first carbon film so that a V-shaped etching region, which is wide in a frontage portion of the step shape portion and becomes narrow as going to a bottom portion of the step shape portion, is formed in the first carbon film existing within the step shape portion, by supplying an etching gas to the process target object; and forming a second carbon film so that the second carbon film is embedded in the etching region by supplying a film forming gas including a hydrocarbon-based carbon source gas to the process target object, in a state where the process target object is heated.

公开(公告)号：US20160265136A1

公开(公告)日：2016-09-15

申请号：US15057563

申请日：2016-03-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: C30B25/16 ,  C30B29/40 ,  C30B25/18 ,  C30B29/06 ,  C30B25/10 ,  C30B25/12

Abstract: A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.

Abstract translation: 一种用于在基板上形成氮化铝膜的成膜方法，其中在真空气氛下通过外延生长将至少一个表面部分由单晶硅形成，包括执行一次或多次循环，包括第一次供给 将含有铝化合物的原料气体输送到基板，以及第二工序，其通过氨气和吸附在硅基板上的铝化合物的反应，供给氨气，形成由氮化铝形成的种子层，同时供给 含有铝化合物的原料气体和氨气，以在种子层上形成氮化铝膜。

公开(公告)号：US20220246429A1

公开(公告)日：2022-08-04

申请号：US17647996

申请日：2022-01-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke WATANABE ,  Shota CHIDA

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/56

Abstract: A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times.

公开(公告)号：US20170345644A1

公开(公告)日：2017-11-30

申请号：US15601245

申请日：2017-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU ,  Masayuki KITAMURA ,  Yosuke WATANABE

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/26 ,  C23C16/52 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/02115 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/67098 ,  H01L21/67109

Abstract: There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.

公开(公告)号：US20150221512A1

公开(公告)日：2015-08-06

申请号：US14607591

申请日：2015-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: H01L21/02 ,  C30B25/10

CPC classification number: H01L21/02645 ,  C30B25/10 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.

Abstract translation: 提供了一种生长氮化镓基晶体的方法，包括：在硅衬底上以350-700℃的成膜温度形成包含氮化铝或氧化铝的中间层; 在含有氨或氧的气氛中加热硅衬底和中间层，使得包含在中间层中的氮化铝或氧化铝的晶核分布在硅衬底上; 以及从分布在硅衬底上的晶体核在硅衬底上生长的氮化镓基晶体。

公开(公告)号：US20230245882A1

公开(公告)日：2023-08-03

申请号：US18161298

申请日：2023-01-30

Applicant: Tokyo Electron Limited

Inventor： Yosuke WATANABE ,  Ryoun SHIMAMOTO ,  Shota CHIDA

IPC: H01L21/02 ,  H01L21/67 ,  C23C28/04

CPC classification number: H01L21/02271 ,  H01L21/02115 ,  H01L21/67098 ,  H01L21/02205 ,  C23C28/04 ,  H01L21/02304

Abstract: A deposition method includes: forming a seed layer on a substrate; and forming a carbon film on the seed layer. The forming the seed layer includes: supplying an aminosilane-based gas to the substrate to form a Si—H bond on a surface of the substrate; and supplying a boron-containing gas to the substrate to form a B—H bond on the surface on which the Si—H bond is formed.

公开(公告)号：US20220235457A1

公开(公告)日：2022-07-28

申请号：US17648950

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Shota CHIDA ,  Yosuke WATANABE

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455

Abstract: A method for depositing a boron nitride film is provided. In the method, a seed layer is formed on a surface of a substrate by supplying an aminosilane gas to the surface of the substrate. The surface of the substrate includes bases having different incubation times for depositing a boron nitride film. A boron nitride film is deposited on the seed layer.

公开(公告)号：US20140318457A1

公开(公告)日：2014-10-30

申请号：US14262334

申请日：2014-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/45523

Abstract: A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel.

Abstract translation: 一种成膜装置包括：处理室，被配置为容纳待处理的基板，所述处理室执行形成化合物半导体膜的成膜工艺; 加热装置，其构造成加热待加工的基板; 排气装置，其构造成排出处理室的内部;以及处理气体供给机构，其构造成将气体供给到处理室。 另外，清洗成膜装置的方法包括：执行清洁处理室内部和部件的处理; 执行分别清洁处理室和构件的内部的下部的过程; 以及执行清洁气体供应通道的过程，其中通过控制处理室内部的压力和温度并从气体供应通道供应清洁气体来执行处理。

公开(公告)号：US20240128081A1

公开(公告)日：2024-04-18

申请号：US18481492

申请日：2023-10-05

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Toru KANAZAWA ,  Yosuke WATANABE ,  Tatsuya MIYAHARA ,  Yuki TANABE ,  Daisuke SUZUKI ,  Masahisa WATANABE ,  Keisuke SUZUKI ,  Tuhin Shuvra Basu

IPC: H01L21/02 ,  C23C16/24

CPC classification number: H01L21/02672 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592

Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.

公开(公告)号：US20140038394A1

公开(公告)日：2014-02-06

申请号：US13958195

申请日：2013-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yosuke WATANABE ,  Kota UMEZAWA

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C23C16/303 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/0242 ,  H01L21/0262

Abstract: A method for forming a compound semiconductor film on a substrate to be processed, which includes: mounting a plurality of substrates to be processed on a substrate mounting jig; loading the substrates to be processed into a processing chamber; and heating the substrates to be processed loaded into the processing chamber; supplying a gas containing one element that constitutes a compound semiconductor, and another gas containing another element that constitutes the compound semiconductor and being different from the one element, into the processing chamber in which the substrates to be processed are loaded; and forming the compound semiconductor film on each of the substrates to be processed.

Abstract translation: 一种在待加工基板上形成化合物半导体膜的方法，包括：将多个待处理基板安装在基板安装夹具上; 将待处理的基板装载到处理室中; 并将待加工的基板加热到处理室中; 供给含有构成化合物半导体的一种元素的气体，以及含有构成化合物半导体的不同于该元素的其他元素的另一种气体加载到其中装载有待处理的基板的处理室中; 以及在要处理的每个基板上形成化合物半导体膜。