公开(公告)号：US20220020618A1

公开(公告)日：2022-01-20

申请号：US17369122

申请日：2021-07-07

Applicant: Tokyo Electron Limited

Inventor： Yuichi TAKENAGA ,  Takahito KASAI ,  Youngtai KANG

IPC: H01L21/67

Abstract: A control device includes a reception unit configured to receive a film characteristic at a plurality of positions of a film formed on a substrate by a film forming processing based on a processing recipe, an optimization processing unit configured to execute an optimization calculation of the processing recipe based on the film characteristic, a diagnosis unit configured to diagnose a validity of an in-plane shape of the film characteristic based on the film characteristic, and a determination unit configured to determine whether or not to notify a user of an encouraging action based on a diagnosis result by the diagnosis unit.

公开(公告)号：US20210020487A1

公开(公告)日：2021-01-21

申请号：US16926909

申请日：2020-07-13

Applicant: Tokyo Electron Limited

Inventor： Youngtai KANG ,  Yuichi TAKENAGA

IPC: H01L21/68 ,  H01L21/673 ,  H01L21/677 ,  H01L21/67 ,  H01L21/66

Abstract: A substrate processing apparatus includes a substrate transfer device that transfers a substrate accommodated in a substrate transfer container to a substrate holder; a substrate holder transfer stage that introduces the substrate holder into a reaction container; a substrate transfer controller that obtains a film thickness measurement result of the substrate, and determines a placing position of the substrate in the substrate holder by a model created in advance from the film thickness measurement result and a transfer position setting circuit; an information processing circuit that analyzes an eccentricity state from a film thickness variation state when a film thickness measurement result is newly obtained; a learning function circuit that updates the model from the eccentricity state; and an optimization function circuit that updates the placing position of the substrate by an updated model and the transfer position setting circuit.

公开(公告)号：US20130260572A1

公开(公告)日：2013-10-03

申请号：US13804036

申请日：2013-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TAKENAGA ,  Yukio TOJO

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L22/12 ,  C23C16/24 ,  C23C16/52 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a continuous processing system, a controller of a heat treatment apparatus calculates a weight of each layer from input target film thicknesses of a phosphorous-doped polysilicon film (D-poly film) and an amorphous silicon film (a-Si film), and calculates activation energy of stacked films based on the calculated weight and activation energy. The controller prepares a stacked film model based on the calculated activation energy and a relationship of a temperature of each zone and film thicknesses of the D-poly film and the a-Si film, and calculates an optimum temperature of each zone by using the prepared stacked film model. The controller controls power controllers of heaters to set a temperature in a reaction tube to be the calculated temperature of each zone and forms stacked films on a semiconductor wafer by controlling a pressure adjusting unit, flow rate adjusting units, etc.

Abstract translation: 在连续处理系统中，热处理装置的控制器根据磷掺杂多晶硅膜（D-poly膜）和非晶硅膜（a-Si膜）的输入目标膜厚计算每层的重量， 基于计算的重量和活化能计算层叠薄膜的活化能。 控制器基于所计算的活化能和D区多层薄膜与a-Si薄膜的各个区域的温度和薄膜厚度的关系，制备叠层薄膜模型，并通过使用所制备的活化能来计算每个区域的最适温度 堆叠电影模型。 控制器控制加热器的功率控制器，将反应管中的温度设定为每个区域的计算温度，并通过控制压力调节单元，流量调节单元等在半导体晶圆上形成叠层薄膜。

公开(公告)号：US20130260328A1

公开(公告)日：2013-10-03

申请号：US13799491

申请日：2013-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TAKENAGA ,  Daisuke KUDO

IPC: F27D19/00

CPC classification number: F27D19/00 ,  C23C16/46 ,  F27B17/0025 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67248

Abstract: A controller of a heat treatment apparatus forms a phosphorous-doped polysilicon film (D-poly film) on a semiconductor wafer, and determines whether the D-poly film satisfies a target heat treatment characteristic. When it is determined that the target heat treatment characteristic is not satisfied, the controller calculates a temperature in a reaction tube and flow rates of process gas supply pipes, which satisfy the target heat treatment characteristic, based on a heat treatment characteristic of the D-poly film and a model indicating relationships between changes in the temperature in the reaction tube and the flow rates of the process gas supply pipes, and a change in a heat treatment characteristic. The controller forms the D-poly film on the semiconductor wafer according to heat treatment conditions including the calculated temperature and the calculated flow rates, so as to satisfy the target heat treatment characteristic.

Abstract translation: 热处理设备的控制器在半导体晶片上形成磷掺杂多晶硅膜（D-poly膜），并确定D多层膜是否满足目标热处理特性。 当确定不满足目标热处理特性时，控制器基于D型热处理特性，计算满足目标热处理特性的反应管中的温度和工艺气体供给管的流量， 表示反应管的温度变化与工艺气体供给管的流量的关系以及热处理特性的变化的模型。 控制器根据包括计算出的温度和计算流量的热处理条件在半导体晶片上形成D-poly膜，以满足目标热处理特性。

公开(公告)号：US20130256293A1

公开(公告)日：2013-10-03

申请号：US13852396

申请日：2013-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TAKENAGA ,  Wenling WANG

IPC: H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: In accordance with some embodiments of the present disclosure, a heat treatment system, a heat treatment method, and a program are provided. The heat treatment system includes a heating unit configured to heat an inside of a processing chamber receiving a plurality of objects to be processed, a heat treatment condition storing unit configured to store a heat treatment condition, a power change model storing unit configured to store a model showing a relationship between a temperature change inside the processing chamber and a power change of the heating unit, a changed temperature receiving unit configured to receive information on a change of the temperature inside the processing chamber, a power calculation unit configured to calculate power of the heating unit required at a changed temperature, and a determining unit configured to determine whether the power of the heating unit calculated by the power calculation unit is saturated.

Abstract translation: 根据本公开的一些实施例，提供热处理系统，热处理方法和程序。 热处理系统包括：加热单元，其构造成加热接收多个待处理物体的处理室的内部;热处理条件存储单元，其被配置为存储热处理条件;电力变化模型存储单元，被配置为存储 示出处理室内的温度变化与加热单元的功率变化之间的关系的模型，被配置为接收关于处理室内的温度变化的信息的变化温度接收单元，被配置为计算处理室的功率的功率的功率计算单元 所述加热单元在变化的温度下需要，以及确定单元，其被配置为确定由所述功率计算单元计算的所述加热单元的功率是否饱和。

公开(公告)号：US20240087925A1

公开(公告)日：2024-03-14

申请号：US18243059

申请日：2023-09-06

Applicant: Tokyo Electron Limited

Inventor： Youngtai KANG ,  Yuichi TAKENAGA ,  Kiwamu ITO ,  Rui IKEDA ,  Ken OKOSHI

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  H01L21/67248

Abstract: An information processing apparatus includes a data acquisition unit, a simulation execution unit, and an optimization unit. The data acquisition unit acquires execution result data including an execution result of the substrate processing based on a process parameter including a pressure in the substrate processing apparatus and including sensor data of the pressure in the substrate processing apparatus. The simulation execution unit inputs the execution result data into a simulation model pre-stored in a storage to calculate a pressure in the substrate processing apparatus that is predicted to approach a target value for a substrate processing result. The optimization unit calculates a predicted value of the substrate processing result based on the process parameter including the calculated pressure.

公开(公告)号：US20220259729A1

公开(公告)日：2022-08-18

申请号：US17650117

申请日：2022-02-07

Applicant: Tokyo Electron Limited

Inventor： Youngtai KANG ,  Yuichi TAKENAGA ,  Juhyeong LEE

IPC: C23C16/455 ,  C23C16/52

Abstract: A deposition system includes a deposition apparatus configured to deposit a film on a substrate, and a control device. The control device includes a recipe storage unit configured to store a recipe that defines a procedure of a substrate processing process performed by the deposition apparatus, and a processor configured to calculate a predicted value of a change amount from a target value of a control target indicating a film thickness or a film quality of a film deposited in a deposition step included in the substrate processing process, by using log information about the deposition apparatus, the log information being collected from when the substrate processing process based on the recipe starts, and update the recipe based on the predicted value so as to change a value of the control target to approach the target value before the deposition step.

公开(公告)号：US20130260039A1

公开(公告)日：2013-10-03

申请号：US13852235

申请日：2013-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TAKENAGA ,  Wenling WANG

IPC: B05D3/02 ,  B05C9/14

CPC classification number: B05D3/0218 ,  B05C9/14 ,  H01L21/324

Abstract: According to an embodiment of the present invention, a heat treatment system is provided. The heat treatment system includes a heating unit, a heat treatment condition memory unit, a power change model memory unit, a heat treatment change model memory unit, a heat treatment result reception unit, and an optimal temperature calculation unit. In the heat treatment system, the optimal temperature calculation unit calculates the power of the heating unit at a corresponding temperature based on the model stored in the power change model memory unit and the calculated temperature, and an optimal temperature is a temperature at which a heat treatment result is closest to the targeted heat treatment result within a range in which the calculated power of the heating unit is not saturated.

Abstract translation: 根据本发明的实施例，提供一种热处理系统。 热处理系统包括加热单元，热处理条件存储单元，功率变化模型存储单元，热处理变化模型存储单元，热处理结果接收单元和最佳温度计算单元。 在热处理系统中，最佳温度计算单元基于存储在功率变化模型存储单元中的模型和计算出的温度来计算加热单元在相应温度下的功率，最佳温度是热量 在加热单元的计算功率不饱和的范围内，处理结果最接近目标热处理结果。