公开(公告)号：US6001738A

公开(公告)日：1999-12-14

申请号：US62115

申请日：1998-04-17

Applicant: Tony Lin ,  Water Lur ,  Shih-Wei Sun

Inventor： Tony Lin ,  Water Lur ,  Shih-Wei Sun

IPC: H01L21/336 ,  H01L21/283

CPC classification number: H01L29/6659 ,  H01L29/665

Abstract: A method of forming salicide, of which the characteristics is the formation of a silicon nitride layer before the source/drain being implanted with dopant. The silicon nitride layer avoid the oxygen within the oxide layer to implant into the source/drain. Thus, a better salicide is obtained. In addition, the formation of the parasitic spacers made of silicon nitride at the side wall bottom of the gate spacer increases the distance between the salicide and the junction. Consequently, the leakage current is prevented. While the silicon nitride layer is removed, the polysilicon of gate and the silicon of the source/drain are amorphized. This is advantageous to the formation of salicide without the step of ion implantation.

Abstract translation: 一种形成硅化物的方法，其特征是在掺杂有掺杂剂的源极/漏极之前形成氮化硅层。 氮化硅层避免氧化物层内的氧气注入到源极/漏极中。 因此，获得更好的自杀剂。 此外，在栅极间隔物的侧壁底部由氮化硅制成的寄生间隔物的形成增加了自对准硅化物与接合部之间的距离。 因此，防止漏电流。 当去除氮化硅层时，栅极和源极/漏极的硅的多晶硅是非晶化的。 这对于没有离子注入步骤的硅化物的形成是有利的。

公开(公告)号：US5914519A

公开(公告)日：1999-06-22

申请号：US9302

申请日：1998-01-20

Applicant: Jih-Wen Chou ,  Tony Lin

Inventor： Jih-Wen Chou ,  Tony Lin

IPC: H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/14 ,  H01L29/76

CPC classification number: H01L29/66598 ,  H01L29/4983 ,  H01L29/4991 ,  H01L29/6659 ,  H01L29/7833

Abstract: An air-gap spacer of a metal-oxide-semiconductor device comprises a spacer and a cross-sectional L-shaped air-gap. The spacer is adjacent to a sidewall of the gate electrode but not directly contacts to the gate electrode. The cross-sectional L-shaped air-gap is located between the spacer and the gate electrode and between the spacer and the substrate so that the spacer is separated from the gate electrode and the spacer is partially separated from the substrate.

Abstract translation: 金属氧化物半导体器件的气隙间隔件包括间隔件和截面L形气隙。 间隔物与栅电极的侧壁相邻，但不直接接触栅电极。 横截面的L形气隙位于间隔件和栅电极之间，并且位于间隔件和衬底之间，使得间隔件与栅电极分离，并且间隔件与衬底部分地分离。

公开(公告)号：US08454717B2

公开(公告)日：2013-06-04

申请号：US12902867

申请日：2010-10-12

Applicant: Tony Lin

Inventor： Tony Lin

IPC: B01D46/00

CPC classification number: B01D46/42 ,  B01D46/0016

Abstract: A foldable dust collector of the present invention includes a supporting portion, a case and an air pump. The supporting portion is foldable. The case is disposed on the supporting portion. The case is pivotable with respect to the supporting portion. The air pump is disposed on the case. The air pump is used for drawing air into the case.Therefore, the foldable dust collector of the present invention can be transformed. A width of the foldable dust collector is changeable. As such, the foldable dust collector is easier to be stored or be transported. Moreover, the foldable dust collector can be used in a small space.

Abstract translation: 本发明的可折叠集尘器包括支撑部分，壳体和空气泵。 支撑部分是可折叠的。 壳体设置在支撑部分上。 壳体相对于支撑部分可枢转。 气泵设置在壳体上。 气泵用于将空气吸入外壳。 因此，可以改变本发明的可折叠集尘器。 可折叠集尘器的宽度是可变的。 因此，可折叠的集尘器更容易被储存或运输。 此外，可折叠式集尘器可以在很小的空间中使用。

公开(公告)号：US08394162B2

公开(公告)日：2013-03-12

申请号：US13094649

申请日：2011-04-26

Applicant: Tony Lin

Inventor： Tony Lin

IPC: B01D53/00

CPC classification number: A47L9/00 ,  A47L9/1683

Abstract: A dust collector of the present invention includes a main body, a first dust container, and two lifting apparatuses. The main body includes a shell, an expandable pipe, and a lid. The expandable pipe, which is vertically expandable, is connected between the shell and the lid. The first dust container is detachably disposed on the main body and is used to be selectively covered by the lid. The two lifting apparatuses respectively include a base, a linking up mechanism, and an operating rod. The two bases are respectively fixed on two sides of an outer wall surface of the shell. The operating rod is movably disposed on the base. One end of the linking up mechanism is disposed on the operating rod, and the other end is fixed on the lid. Thereby, the lifting apparatus can horizontally lift the lid.

Abstract translation: 本发明的集尘器包括主体，第一灰尘容器和两个提升装置。 主体包括壳体，可膨胀管道和盖子。 可膨胀管可垂直膨胀，连接在外壳和盖子之间。 第一灰尘容器可拆卸地设置在主体上，并被用来选择性地被盖子覆盖。 两个提升装置分别包括基座，连接机构和操作杆。 两个基座分别固定在外壳的外壁表面的两侧。 操作杆可移动地设置在基座上。 连接机构的一端设置在操作杆上，另一端固定在盖上。 因此，提升装置可以水平地提升盖子。

公开(公告)号：US08096614B2

公开(公告)日：2012-01-17

申请号：US12689731

申请日：2010-01-19

Applicant: Tony Lin

Inventor： Tony Lin

IPC: A47C3/03

CPC classification number: A47C3/03

Abstract: A locking mechanism for a glider rocker having a gliding chair seat mounted on a stationary base, including an operating assembly mounted on the gliding chair seat, a pair of bearing brackets mounted on the stationary base respectively, and a pair of mounting assemblies. Each mounting assembly includes a prop, a strut, a curved elongated member, a mounting bracket, and a restoring spring connected with the curved elongated member and the prop.

Abstract translation: 一种用于滑翔机摇杆的锁定机构，其具有安装在固定基座上的滑翔椅座椅，其包括安装在滑动椅座上的操作组件，分别安装在固定基座上的一对轴承座和一对安装组件。 每个安装组件包括支柱，支柱，弯曲的细长构件，安装支架和与弯曲的细长构件和支柱连接的复原弹簧。

公开(公告)号：US07955404B2

公开(公告)日：2011-06-07

申请号：US12608942

申请日：2009-10-29

Applicant: Tony Lin

Inventor： Tony Lin

IPC: B01D50/00

CPC classification number: B01D45/12 ,  B01D45/18 ,  B04C5/13 ,  B04C5/185 ,  B04C2009/005

Abstract: A dust collector includes a shell, an exit tube, an inner tube, a suction device, a first dust container, a bypass tube and a first dust bag. The shell defines a first receiving room therein. The exit tube defines an exit passage therein. The inner tube defines a connection passage which has a first opening and a second opening. The first opening communicates the first receiving room, and the second opening communicates the exit passage. The suction device provides the exit passage with a negative pressure. The first dust container defines a second receiving room therein. A mesh is disposed on a bottom surface of the first dust container to divide the second receiving room into a first chamber and a second chamber. The bypass tube defines a bypass passage therein, and it communicates the connection passage with the second chamber. The first dust bag is disposed in the first chamber.

Abstract translation: 集尘器包括壳体，出口管，内管，抽吸装置，第一灰尘容器，旁通管和第一除尘袋。 外壳在其中限定了第一接收室。 出口管在其中限定出口通道。 内管限定具有第一开口和第二开口的连接通道。 第一开口与第一接收室通信，第二开口连通出口通道。 抽吸装置为出口通道提供负压。 第一集尘容器在其中限定第二容纳室。 网格布置在第一灰尘容器的底表面上，以将第二容纳室分成第一室和第二室。 旁通管在其中限定旁路通道，并且其将连接通道与第二室连通。 第一防尘袋设置在第一室中。

公开(公告)号：USD590283S1

公开(公告)日：2009-04-14

申请号：US29319424

申请日：2008-06-09

Applicant: James M. Critelli ,  Peter Lin ,  Tony Lin

Designer： James M. Critelli ,  Peter Lin ,  Tony Lin

公开(公告)号：US20070061429A1

公开(公告)日：2007-03-15

申请号：US11224596

申请日：2005-09-12

Applicant: Tony Lin

Inventor： Tony Lin

IPC: G06F15/177

CPC classification number: G06F9/5083 ,  G06F2209/5022

Abstract: Utilization of a resource by an application can be optimized in response to an optimization event. The event may include an expiration of a timer, a change in an operating condition of the application, a detection of work to be performed by the application, or some other event. Optimizing the application increases the operating efficiency of the application on the client as well as the application itself. Data used to optimize the application on a client may include environmental data, application operation data, and other data. The data may be weighted or considered equally.

Abstract translation: 响应于优化事件可以优化应用程序使用资源。 事件可以包括定时器的到期，应用的操作条件的变化，对应用执行的工作的检测或某些其他事件。 优化应用程序可以提高客户端应用程序的运行效率以及应用程序本身。 用于优化客户端应用程序的数据可能包括环境数据，应用程序操作数据和其他数据。 数据可以被加权或相等地考虑。

公开(公告)号：US20060118917A1

公开(公告)日：2006-06-08

申请号：US11340035

申请日：2006-01-26

Applicant: Yoyi Gong ,  Tony Lin ,  Jung-Tsung Tseng ,  Abula Yu

Inventor： Yoyi Gong ,  Tony Lin ,  Jung-Tsung Tseng ,  Abula Yu

IPC: H01L29/06

CPC classification number: H01L21/76224

Abstract: A shallow trench isolation (STI) structure and fabricating method thereof is provided. A substrate is provided. A patterned mask layer is formed over the substrate. Using the patterned mask layer as an etching mask, the substrate is patterned to form a trench. A nitridation process is performed to form a silicon nitride liner on the surface of the trench. An insulating material is deposited to fill the trench. Since the silicon nitride liner within the STI is very thin, residual stress within the substrate is reduced, and the silicon nitride liner has very little or negligible impact on the trench aspect ratio.

公开(公告)号：US06902994B2

公开(公告)日：2005-06-07

申请号：US10643675

申请日：2003-08-15

Applicant: Yoyi Gong ,  Tony Lin ,  Jung-Tsung Tseng ,  Abula Yu

Inventor： Yoyi Gong ,  Tony Lin ,  Jung-Tsung Tseng ,  Abula Yu

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/417 ,  H01L21/3205

CPC classification number: H01L29/41783 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/41775 ,  H01L29/665 ,  H01L29/66545

Abstract: A method for fabricating a transistor having a fully silicided gate is described. A silicon substrate with a semi-finished transistor formed thereon is provided, wherein the transistor comprises a gate dielectric film, a silicon gate, a cap layer on the silicon gate, a spacer and a source/drain region. A raised source/drain is formed on the source/drain region, and then the cap layer is removed. Subsequently, a full silicidation process is performed to fully silicide the silicon gate.

Abstract translation: 描述了一种制造具有完全硅化栅的晶体管的方法。 提供其上形成有半成品晶体管的硅衬底，其中晶体管包括栅极电介质膜，硅栅极，硅栅极上的覆盖层，间隔物和源极/漏极区域。 在源极/漏极区域上形成升高的源极/漏极，然后去除覆盖层。 随后，进行完全硅化处理以使硅栅极完全硅化。