公开(公告)号：US20050090075A1

公开(公告)日：2005-04-28

申请号：US10973426

申请日：2004-10-27

申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L21/30 ,  H01L21/312 ,  H01L21/46 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

公开(公告)号：US07375006B2

公开(公告)日：2008-05-20

申请号：US11542216

申请日：2006-10-04

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US07666719B2

公开(公告)日：2010-02-23

申请号：US12149131

申请日：2008-04-28

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US20080206959A1

公开(公告)日：2008-08-28

申请号：US12149131

申请日：2008-04-28

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/20

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

公开(公告)号：US20070032042A1

公开(公告)日：2007-02-08

申请号：US11542216

申请日：2006-10-04

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US07122445B2

公开(公告)日：2006-10-17

申请号：US10619074

申请日：2003-07-15

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US07268487B2

公开(公告)日：2007-09-11

申请号：US10662357

申请日：2003-09-16

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

IPC分类号： H05B33/12

CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

摘要翻译： 本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。 在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀 可以防止含氟塑料的膜中的氟。 此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在 发光装置。

公开(公告)号：US07453094B2

公开(公告)日：2008-11-18

申请号：US10662508

申请日：2003-09-16

申请人： Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

发明人： Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

IPC分类号： H01L27/15

CPC分类号： H01L51/5253 ,  H01L27/3244 ,  H01L2251/5315

摘要： The present invention is to use a film containing fluoroplastics that is capable of forming into a lamination as a protective film for protecting a light-emitting device against moisture or gas such as oxygen so as to prevent of deterioration of the light-emitting device easier and improve reliability of the light-emitting device greater than the conventional light-emitting apparatus. In the present invention, another film can be stacked on the film containing fluoroplastics by forming irregularities by means of the surface preparation on the film containing fluoroplastics or by controlling the content of fluoroplastics in the film containing fluoroplastics. In addition, in the case that another film is stacked on the film containing fluoroplastics by controlling the content of fluoroplastics, the content of fluoroplastics can be controlled by means of forming the film containing fluoroplastics by sputtering using sequentially a plurality of targets that has different contents of fluoroplastics and metallic oxides.

摘要翻译： 本发明是使用含氟塑料的膜，其能够形成层压作为用于保护发光装置免受湿气或气体如氧气的保护膜，以防止发光装置的劣化更容易，以及 提高了发光装置的可靠性，比传统的发光装置大。 在本发明中，通过在包含氟塑料的膜上的表面处理或通过控制含有氟塑料的膜中的氟塑料的含量，通过形成不规则性，可以将另一种膜堆叠在含氟塑料的膜上。 此外，在通过控制氟塑料的含量将另一薄膜堆叠在含有氟塑料的薄膜的情况下，可以通过依次使用具有不同含量的多个靶进行溅射来形成含有氟塑料的薄膜来控制氟塑料的含量 的氟塑料和金属氧化物。

公开(公告)号：US08674493B2

公开(公告)日：2014-03-18

申请号：US13618384

申请日：2012-09-14

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

IPC分类号： H01L23/498

CPC分类号： G06K19/077 ,  G06K19/07703 ,  G06Q20/105 ,  G06Q20/3415 ,  G07F7/1008 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2224/45147

摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

摘要翻译： 本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

公开(公告)号：US08634041B2

公开(公告)日：2014-01-21

申请号：US13466406

申请日：2012-05-08

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。