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公开(公告)号:US20100266070A1
公开(公告)日:2010-10-21
申请号:US12753984
申请日:2010-04-05
申请人: Takanori MATSUZAKI
发明人: Takanori MATSUZAKI
IPC分类号: H04L27/06
CPC分类号: G06K19/07749 , H04L27/06
摘要: A semiconductor device is provided, which comprises a first demodulation circuit, a second demodulation circuit, a first bias circuit, a second bias circuit, a comparator, an analog buffer circuit, and a pulse detection circuit. An input portion of the pulse detection circuit is electrically connected to an output portion of the analog buffer circuit, a first output portion of the pulse detection circuit is electrically connected to an input portion of the first bias circuit, and a second output portion of the pulse detection circuit is electrically connected to an input portion of the second bias circuit.
摘要翻译: 提供一种半导体器件,其包括第一解调电路,第二解调电路,第一偏置电路,第二偏置电路,比较器,模拟缓冲电路和脉冲检测电路。 脉冲检测电路的输入部分电连接到模拟缓冲电路的输出部分,脉冲检测电路的第一输出部分电连接到第一偏置电路的输入部分,第二输出部分 脉冲检测电路电连接到第二偏置电路的输入部分。
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公开(公告)号:US20120294061A1
公开(公告)日:2012-11-22
申请号:US13472789
申请日:2012-05-16
IPC分类号: G11C5/06
CPC分类号: G11C8/14 , G11C8/08 , G11C11/408 , G11C11/4087 , G11C2216/14
摘要: A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.
摘要翻译: 提供了具有简化的电路结构并能够稳定运行的字线分配器。 提供了具有简化的电路结构并且可以稳定运行的存储装置。 泄漏电流非常低的晶体管与字线和子字线之间的部分串联连接,构成字线分配器。 晶体管可以包括其中形成沟道的半导体层的氧化物半导体。 在存储装置中使用这样的电路结构简化的字线分配器。
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公开(公告)号:US20110254600A1
公开(公告)日:2011-10-20
申请号:US13173595
申请日:2011-06-30
申请人: Kiyoshi KATO , Takanori MATSUZAKI
发明人: Kiyoshi KATO , Takanori MATSUZAKI
IPC分类号: H03L7/08
CPC分类号: H03L7/0995 , H03L7/093 , H03L7/107 , H03L7/18
摘要: An object is to provide a PLL having a wide operating range. Another object is to provide a semiconductor device or a wireless tag which has a wide operating range in a communication distance or temperature by incorporating such a PLL. The semiconductor device or the wireless tag includes a first divider circuit; a second divider circuit; a phase comparator circuit to which an output of the first divider circuit and an output of the second divider circuit are provided; a loop filter to which an output of the phase comparator circuit is supplied and in which a time constant is switched in accordance with an inputted signal; and a voltage controlled oscillator circuit to which an output of the loop filter is supplied and which supplies an output to the second divider circuit.
摘要翻译: 目的是提供具有宽工作范围的PLL。 另一个目的是提供一种半导体器件或无线标签,其通过并入这种PLL而在通信距离或温度下具有宽的工作范围。 半导体器件或无线标签包括第一除法电路; 第二分频电路; 相位比较器电路,第一分频电路的输出和第二除法电路的输出端提供给该相位比较器电路; 环路滤波器,根据输入的信号,提供相位比较器电路的输出并将时间常数切换到该环路滤波器; 以及压控振荡器电路,所述环路滤波器的输出端被提供给所述压控振荡器电路,并将输出提供给所述第二除法电路。
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公开(公告)号:US20090302481A1
公开(公告)日:2009-12-10
申请号:US12510603
申请日:2009-07-28
申请人: Takanori MATSUZAKI
发明人: Takanori MATSUZAKI
IPC分类号: H01L23/48
CPC分类号: H01L23/5225 , H01L23/552 , H01L27/124 , H01L27/13 , H01L29/78624 , H01L29/78633 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要: The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has a first conductive layer over a first insulating layer; a second insulating layer over the first conductive layer, which includes an opening extending to the first conductive layer; and a signal wiring layer for electrically connecting an integrated circuit portion to an antenna and a second conductive layer adjacent to the signal wiring layer, which are formed over the second insulating layer. The second conductive layer is in contact with the first conductive layer through the opening, and the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween.
摘要翻译: 本发明提供了以低成本和高产率制造更高性能和更高可靠性的半导体器件的技术。 本发明的半导体器件在第一绝缘层上具有第一导电层; 在第一导电层上的第二绝缘层,其包括延伸到第一导电层的开口; 以及用于将集成电路部分电连接到天线的信号布线层和与所述信号布线层相邻的第二导电层,所述第二导电层形成在所述第二绝缘层上。 第二导电层通过开口与第一导电层接触,并且第一导电层与信号布线层重叠,其间插入第二绝缘层。
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