Radiation image capturing system, radiation image capturing method, and program
    11.
    发明授权
    Radiation image capturing system, radiation image capturing method, and program 有权
    辐射图像捕获系统,辐射图像捕获方法和程序

    公开(公告)号:US08106374B2

    公开(公告)日:2012-01-31

    申请号:US12391875

    申请日:2009-02-24

    IPC分类号: G01N23/04

    摘要: A radiation image capturing system includes a first image capturing apparatus incorporating a radiation detector for detecting a radiation which has passed through a subject and converting the radiation into radiation image information, a second image capturing apparatus incorporating a stimulable phosphor panel for detecting a radiation which has passed through a subject, converting the radiation into radiation image information, and holding the radiation image information, and a processor for controlling the first image capturing apparatus and the second image capturing apparatus according to image capturing instruction information. The processor includes a priority activator for activating the second image capturing apparatus in preference to the first image capturing apparatus when the processor is activated.

    摘要翻译: 辐射图像拍摄系统包括:第一图像捕获装置,其包括用于检测已经穿过被摄体的辐射并将辐射转换成辐射图像信息的辐射检测器;第二图像捕获装置,其包含用于检测辐射的可刺激的荧光屏, 通过对象,将辐射转换成放射线图像信息,并保持放射线图像信息;以及处理器,用于根据图像捕获指令信息控制第一图像捕获装置和第二图像捕获装置。 当处理器被激活时,处理器包括优先于第一图像捕获设备来激活第二图像捕获设备的优先激活器。

    WELDING INSPECTION METHOD AND WELDING INSPECTION APPARATUS
    13.
    发明申请
    WELDING INSPECTION METHOD AND WELDING INSPECTION APPARATUS 有权
    焊接检验方法和焊接检验装置

    公开(公告)号:US20100326196A1

    公开(公告)日:2010-12-30

    申请号:US12865570

    申请日:2009-01-19

    申请人: Hiroshi Fukuda

    发明人: Hiroshi Fukuda

    IPC分类号: G01N29/04

    摘要: Disclosed is a welding inspection method which does not require the inspector to be highly skilled, does not require waiting for the spot welded part to cool off, and with which the probe is not consumed or damaged. A probe temporarily mounted close to the welded part on the surface of a metal plate emits ultrasonic waves from an oblique direction with respect to the boundary surfaces between a plurality of metal plates. At this time, the probe is temporarily mounted at the position where the incident ultrasonic waves pass through the welded part at the boundary between the plurality of metal plates in an oblique direction with respect to the boundary surface. Also, a display processing means displays the intensity of the refrected ultrasonic waves. Alternatively, the display processing means displays the details of the detection result estimated based on the intensity of the reflected ultrasonic waves.

    摘要翻译: 公开了一种焊接检查方法,其不需要检查员高度熟练,不需要等待点焊部件冷却,并且探针不被消耗或损坏。 临时安装在金属板表面上的焊接部分的探针相对于多个金属板之间的边界面从倾斜方向发射超声波。 此时,探针临时安装在入射超声波相对于边界面倾斜方向穿过多个金属板之间的边界处的焊接部位的位置。 此外,显示处理装置显示反射的超声波的强度。 或者,显示处理装置显示基于反射的超声波的强度估计的检测结果的细节。

    Sound-electricity conversion device, array-type ultrasonic transducer, and ultrasonic diagnostic apparatus
    14.
    发明授权
    Sound-electricity conversion device, array-type ultrasonic transducer, and ultrasonic diagnostic apparatus 有权
    声电转换装置,阵列式超声波换能器和超声波诊断装置

    公开(公告)号:US07817811B2

    公开(公告)日:2010-10-19

    申请号:US11341655

    申请日:2006-01-30

    IPC分类号: H04R25/00

    CPC分类号: B06B1/0292

    摘要: The present invention aims to stabilize sound-electricity conversion characteristics of a diaphragm-type sound-electricity conversion device as well as to decrease the noise level of an ultrasonic diagnostic apparatus using the sound-electricity conversion device. The sound-electricity conversion device is configured by a capacitor cell including a lower electrode formed on a silicon substrate and an upper electrode over the lower electrode, the lower and upper electrodes sandwiching a cavity. An electrode short-circuit prevention film is formed on the upper electrode on the cavity side. The electrode short-circuit prevention film is formed of a material with an electrical time constant shorter than 1 second and longer than 10 microseconds, such as silicon nitride containing a stoichiometrically excessive amount of silicon. As a result, the electrode short-circuit prevention film has small electric conductivity, and thus it is made possible to prevent the film from being charged with electric charge and to avoid the drift of the electric charge. Consequently, the sound-electricity conversion characteristics of the sound-electricity conversion device stabilize, and further the sound noise level of the ultrasonic diagnostic apparatus decreases.

    摘要翻译: 本发明旨在稳定隔膜式声电转换装置的声电转换特性,并且降低使用声电转换装置的超声波诊断装置的噪声水平。 声电转换装置由包括形成在硅基板上的下电极和下电极上的上电极的电容器单元构成,下电极和上电极夹着空腔。 在空腔侧的上部电极上形成电极短路防止膜。 电极短路防止膜由电气时间常数短于1秒且长于10微秒的材料形成,例如含有化学计量过量的硅的氮化硅。 结果,电极短路防止膜具有小的导电性,因此可以防止膜被充电并避免电荷的漂移。 因此,声电转换装置的声电转换特性稳定,超声波诊断装置的声音噪声水平进一步降低。

    Disk array apparatus
    15.
    发明授权
    Disk array apparatus 有权
    磁盘阵列设备

    公开(公告)号:US07724515B2

    公开(公告)日:2010-05-25

    申请号:US12010291

    申请日:2008-01-23

    IPC分类号: G06F1/20 H05K7/20 F01N13/00

    摘要: In a disk array apparatus, by taking note of a first sound of a specific frequency which is a noise element of original sounds generated from a fan, a second sound whose phase is inverted to that of the first sound is generated by a structure of a cooling air flow path passing through the fan, and the second sound is synthesized with the first sound on the cooling air flow path, thereby reducing the noise. For example, an exhaust duct is located on a fan unit in an upper part of the apparatus, two flow paths extending to an exhaust port are formed in an internal structure of the exhaust duct, and the two flow paths are designed so that the difference in the flow path length therebetween becomes equivalent to half wavelength of the specific frequency.

    摘要翻译: 在磁盘阵列装置中,通过记录作为从风扇产生的原始声音的噪声要素的特定频率的第一声音,其相位与第一声音的相反相反的第二声音由 通过风扇的冷却空气流动路径,并且第二声音在冷却空气流动路径上与第一声音合成,从而降低噪音。 例如,排气管位于设备上部的风扇单元上,延伸到排气口的两个流路形成在排气管的内部结构中,并且两个流路被设计成使得差异 在其流动路径中,其长度变得等于特定频率的一半波长。

    METHOD AND STRUCTURE FOR JOINING MEMBERS
    16.
    发明申请
    METHOD AND STRUCTURE FOR JOINING MEMBERS 审中-公开
    加入会员的方法与结构

    公开(公告)号:US20100001043A1

    公开(公告)日:2010-01-07

    申请号:US12447919

    申请日:2007-11-09

    申请人: Hiroshi Fukuda

    发明人: Hiroshi Fukuda

    IPC分类号: B23K20/12

    摘要: A method and a structure for joining members are provided which are suited for reinforcement of a shape.An auxiliary member 7 is inserted into respective holes 9a and 9b of first and second portions 8a and 8b of a main member 6 such that tip and base ends of the auxiliary member 7 are in the holes 9b and 9a of the second and first portions 8b and 8a, respectively. A joining tool 5 is pushed, while rotated, on the tip end of the auxiliary member 7 to soften the portion of the auxiliary member and the second portion 8b of the main member 6 due to frictional heat and plastic flow. Then, the joining tool 5 is released from the main member 6 to allow the second portion 8b and the plastic flow portion of the auxiliary member 7 to solidify. Further, the joining tool 5 is pushed, while rotated, on the base end of the auxiliary member 7 to soften the portion of the auxiliary member and the first portion 8a of the main member 6 due to frictional heat and plastic flow. Then, the joining tool 5 is released from the main member 6 to allow the first portion 8a and the plastic flow portion of the auxiliary member 7 to solidfy.

    摘要翻译: 提供一种用于连接构件的方法和结构,其适于加强形状。 辅助构件7插入到主构件6的第一和第二部分8a和8b的相应孔9a和9b中,使得辅助构件7的尖端和底端位于第二和第一部分8b的孔9b和9a中 和8a。 接合工具5在辅助构件7的顶端旋转的同时被推动,以使由于摩擦热和塑性流动的辅助构件和主构件6的第二部分8b的部分软化。 然后,接合工具5从主构件6释放,使辅助构件7的第二部分8b和塑料流动部分固化。 此外,接合工具5在辅助构件7的基端被旋转的同时被推动,以使由于摩擦热和塑性流动引起的辅助构件和主构件6的第一部分8a的部分软化。 然后,将接合工具5从主构件6释放,使辅助构件7的第一部分8a和塑料流动部分固定。

    ULTRASONOGRAPHIC DEVICE
    18.
    发明申请
    ULTRASONOGRAPHIC DEVICE 有权
    超声波设备

    公开(公告)号:US20090301199A1

    公开(公告)日:2009-12-10

    申请号:US11996532

    申请日:2006-01-30

    IPC分类号: G01N29/34 H02N1/08

    摘要: The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103). The series of operations is controlled by the controller (104), and thus sensitivity variation caused by difference in the changes with elapsed time, particularly between the plural transducers, is calibrated.

    摘要翻译: 由作为基本单元的隔膜电声换能器(101)构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响,导致主光束灵敏度的漂移, 由于声学噪声水平的上升引起的声学SN比的降低,以及超声波束的方向性的劣化。 为了解决这个问题,提供一种充电控制器(充电监视器211)来控制电声换能器(101)中的电荷。 充电监视部(102)监视充电量的变化。 当充电量的变化小时,通过例如将接收信号乘以对应于变化量的校准系数,由控制器(104)校准发射灵敏度或接收灵敏度。 此外,当电荷量的变化大时,例如,电荷可以从电荷发射体(103)重新发射。 一系列操作由控制器(104)控制,因此校正了由于经过时间的变化,特别是多个换能器之间的差异引起的灵敏度变化。

    Method for manufacturing semiconductor device, method for forming alignment mark, and semiconductor device
    19.
    发明授权
    Method for manufacturing semiconductor device, method for forming alignment mark, and semiconductor device 有权
    用于制造半导体器件的方法,用于形成对准标记的方法和半导体器件

    公开(公告)号:US07601605B2

    公开(公告)日:2009-10-13

    申请号:US11689108

    申请日:2007-03-21

    申请人: Hiroshi Fukuda

    发明人: Hiroshi Fukuda

    IPC分类号: H01L21/76

    摘要: A method for manufacturing a semiconductor device includes the steps of: forming a first dielectric film on a substrate; etching the first dielectric film in a plug forming region to form a first via hole; forming a first plug electrode in the first via hole; forming a conductive film on the first dielectric film where the first plug electrode is formed; selectively etching the conductive film to form a local wiring on the first plug electrode and to form a pad layer on the first dielectric film in a specified region; forming a second dielectric film on the first dielectric film, thereby covering the local wiring and the pad layer; selectively etching the second dielectric film, thereby forming a second via hole in the second dielectric film with the local wiring as a bottom surface, and an opening section in the second dielectric film with the pad layer as a bottom surface; forming a metal film on the second dielectric film, thereby embedding the second via hole and the opening section; and applying a CMP processing to the metal film to remove the metal film on the second dielectric film, thereby forming a second plug electrode in the second via hole and forming an alignment mark on the pad layer.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在衬底上形成第一电介质膜; 在插塞形成区域中蚀刻第一电介质膜以形成第一通孔; 在所述第一通孔中形成第一插头电极; 在形成有第一插塞电极的第一绝缘膜上形成导电膜; 选择性地蚀刻所述导电膜以在所述第一插塞电极上形成局部布线并且在特定区域中在所述第一电介质膜上形成焊盘层; 在所述第一电介质膜上形成第二电介质膜,从而覆盖所述局部布线和所述焊盘层; 选择性地蚀刻第二电介质膜,从而在第二电介质膜中形成第二通孔,其中局部布线为底面;以及第二介电膜中的开口部分,其中焊盘层为底面; 在所述第二电介质膜上形成金属膜,从而嵌入所述第二通孔和所述开口部; 以及对所述金属膜施加CMP处理以除去所述第二电介质膜上的金属膜,从而在所述第二通孔中形成第二插塞电极,并在所述焊盘层上形成对准标记。