公开(公告)号：US07817811B2

公开(公告)日：2010-10-19

申请号：US11341655

申请日：2006-01-30

申请人： Shinichiro Umemura ,  Takashi Azuma ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Toshiyuki Mine ,  Syuntaro Machida

发明人： Shinichiro Umemura ,  Takashi Azuma ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Toshiyuki Mine ,  Syuntaro Machida

IPC分类号： H04R25/00

CPC分类号： B06B1/0292

摘要： The present invention aims to stabilize sound-electricity conversion characteristics of a diaphragm-type sound-electricity conversion device as well as to decrease the noise level of an ultrasonic diagnostic apparatus using the sound-electricity conversion device. The sound-electricity conversion device is configured by a capacitor cell including a lower electrode formed on a silicon substrate and an upper electrode over the lower electrode, the lower and upper electrodes sandwiching a cavity. An electrode short-circuit prevention film is formed on the upper electrode on the cavity side. The electrode short-circuit prevention film is formed of a material with an electrical time constant shorter than 1 second and longer than 10 microseconds, such as silicon nitride containing a stoichiometrically excessive amount of silicon. As a result, the electrode short-circuit prevention film has small electric conductivity, and thus it is made possible to prevent the film from being charged with electric charge and to avoid the drift of the electric charge. Consequently, the sound-electricity conversion characteristics of the sound-electricity conversion device stabilize, and further the sound noise level of the ultrasonic diagnostic apparatus decreases.

摘要翻译： 本发明旨在稳定隔膜式声电转换装置的声电转换特性，并且降低使用声电转换装置的超声波诊断装置的噪声水平。 声电转换装置由包括形成在硅基板上的下电极和下电极上的上电极的电容器单元构成，下电极和上电极夹着空腔。 在空腔侧的上部电极上形成电极短路防止膜。 电极短路防止膜由电气时间常数短于1秒且长于10微秒的材料形成，例如含有化学计量过量的硅的氮化硅。 结果，电极短路防止膜具有小的导电性，因此可以防止膜被充电并避免电荷的漂移。 因此，声电转换装置的声电转换特性稳定，超声波诊断装置的声音噪声水平进一步降低。

公开(公告)号：US20060284519A1

公开(公告)日：2006-12-21

申请号：US11341655

申请日：2006-01-30

申请人： Shinichiro Umemura ,  Takashi Azuma ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Toshiyuki Mine ,  Syuntaro Machida

发明人： Shinichiro Umemura ,  Takashi Azuma ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Toshiyuki Mine ,  Syuntaro Machida

IPC分类号： H01L41/00

CPC分类号： B06B1/0292

摘要： The present invention aims to stabilize sound-electricity conversion characteristics of a diaphragm-type sound-electricity conversion device as well as to decrease the noise level of an ultrasonic diagnostic apparatus using the sound-electricity conversion device. The sound-electricity conversion device is configured by a capacitor cell including a lower electrode formed on a silicon substrate and an upper electrode over the lower electrode, the lower and upper electrodes sandwiching a cavity. An electrode short-circuit prevention film is formed on the upper electrode on the cavity side. The electrode short-circuit prevention film is formed of a material with an electrical time constant shorter than 1 second and longer than 10 microseconds, such as silicon nitride containing a stoichiometrically excessive amount of silicon. As a result, the electrode short-circuit prevention film has small electric conductivity, and thus it is made possible to prevent the film from being charged with electric charge and to avoid the drift of the electric charge. Consequently, the sound-electricity conversion characteristics of the sound-electricity conversion device stabilize, and further the sound noise level of the ultrasonic diagnostic apparatus decreases.

摘要翻译： 本发明旨在稳定隔膜式声电转换装置的声电转换特性，并且降低使用声电转换装置的超声波诊断装置的噪声水平。 声电转换装置由包括形成在硅基板上的下电极和下电极上的上电极的电容器单元构成，下电极和上电极夹着空腔。 在空腔侧的上部电极上形成电极短路防止膜。 电极短路防止膜由电气时间常数短于1秒且长于10微秒的材料形成，例如含有化学计量过量的硅的氮化硅。 结果，电极短路防止膜具有小的导电性，因此可以防止膜被充电并避免电荷的漂移。 因此，声电转换装置的声电转换特性稳定，超声波诊断装置的声音噪声水平进一步降低。

公开(公告)号：US20090301199A1

公开(公告)日：2009-12-10

申请号：US11996532

申请日：2006-01-30

申请人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

发明人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

IPC分类号： G01N29/34 ,  H02N1/08

CPC分类号： A61B8/4483 ,  A61B8/08 ,  A61B8/4281 ,  B06B1/0292 ,  G01N29/2431 ,  G01S15/00

摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103). The series of operations is controlled by the controller (104), and thus sensitivity variation caused by difference in the changes with elapsed time, particularly between the plural transducers, is calibrated.

摘要翻译： 由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移， 由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。 为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。 充电监视部（102）监视充电量的变化。 当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。 此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。 一系列操作由控制器（104）控制，因此校正了由于经过时间的变化，特别是多个换能器之间的差异引起的灵敏度变化。

公开(公告)号：US08132462B2

公开(公告)日：2012-03-13

申请号：US11996532

申请日：2006-01-30

申请人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

发明人： Takashi Azuma ,  Shinichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

IPC分类号： G01N29/34 ,  H02N1/08

CPC分类号： A61B8/4483 ,  A61B8/08 ,  A61B8/4281 ,  B06B1/0292 ,  G01N29/2431 ,  G01S15/00

摘要： The receive sensitivity of an ultrasound array transducer structured with a diaphragm electro-acoustic transducer (101) being a basic unit is affected by change in a charge amount with elapsed time due to leakage or the like, which causes drift of the primary beam sensitivity, degradation in the acoustic SN ratio due to a rise in the acoustic noise level, and degradation in the directivity of an ultrasound beam. To addressing this problem, a charge controller (charge monitor 211) is provided to control charge in an electro-acoustic transducer (101). A charge monitoring section (102) monitors the change in the charge amount. When change in the charge amount is small, transmit sensitivity or receive sensitivity is calibrated by a controller (104) by, for example, multiplying a receive signal by a calibration coefficient corresponding to the change amount. Further, when the change in the charge amount is large, for example, charges can be re-emitted from a charge emitter (103).

摘要翻译： 由作为基本单元的隔膜电声换能器（101）构成的超声波阵列换能器的接收灵敏度受到由于泄漏等引起的经过时间的电荷量的变化的影响，导致主光束灵敏度的漂移， 由于声学噪声水平的上升引起的声学SN比的降低，以及超声波束的方向性的劣化。 为了解决这个问题，提供一种充电控制器（充电监视器211）来控制电声换能器（101）中的电荷。 充电监视部（102）监视充电量的变化。 当充电量的变化小时，通过例如将接收信号乘以对应于变化量的校准系数，由控制器（104）校准发射灵敏度或接收灵敏度。 此外，当电荷量的变化大时，例如，电荷可以从电荷发射体（103）重新发射。

公开(公告)号：US07860258B2

公开(公告)日：2010-12-28

申请号：US11491198

申请日：2006-07-24

申请人： Takashi Azuma ,  Shin-ichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

发明人： Takashi Azuma ,  Shin-ichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

IPC分类号： H04R25/00

CPC分类号： B06B1/0292 ,  H04R19/005

摘要： A transducer for transmitting and receiving ultrasonic waves to a diaphragm-based ultrasonic transducer device using silicon as a base material. An electro-acoustic transducer device which can have a first electrode formed on top of, or inside, a substrate and having a thin film provided on top of the substrate. The device can also have a second electrode formed on top of, or inside, the thin film. A void layer can be provided between the first electrode and the second electrode. A charge-storage layer can be provided between the first electrode and the second electrode. A source electrode and a drain electrode can also be provided for measuring a quantity of electricity stored in the charge-storage layer.

摘要翻译： 一种用于将超声波发送和接收到使用硅作为基材的基于隔膜的超声波换能器装置的换能器。 一种电声换能器装置，其可以具有形成在基板的顶部或内部并且具有设置在基板顶部上的薄膜的第一电极。 该器件还可以具有形成在薄膜的顶部或内部的第二电极。 可以在第一电极和第二电极之间设置空隙层。 可以在第一电极和第二电极之间设置电荷存储层。 还可以提供源电极和漏电极来测量存储在电荷存储层中的电量。

公开(公告)号：US20070057603A1

公开(公告)日：2007-03-15

申请号：US11491198

申请日：2006-07-24

申请人： Takashi Azuma ,  Shin-ichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

发明人： Takashi Azuma ,  Shin-ichiro Umemura ,  Tatsuya Nagata ,  Hiroshi Fukuda ,  Shuntaro Machida ,  Toshiyuki Mine

IPC分类号： H01L41/09

CPC分类号： B06B1/0292 ,  H04R19/005

摘要： In a semiconductor diaphragm type electro-acoustic transducer device having no necessity for a DC bias voltage applied as a result of a charge-stored layer being provide between electrodes, electro-mechanical conversion efficiency undergoes a change owing to time-dependent change in a quantity of stored electricity due to leakage of charge, and so forth. As for sensitivity of signal reception, provided by an ultrasonic array-transducer made up of the electro-acoustic transducer devices each as a basic unit, not only a main beam sensitivity undergoes drift as a result of drift in the electromechanical conversion efficiency, but also there result deterioration in an acoustic S/N ratio, and deterioration in directionality of an ultrasonic beam. In order to resolve those problems, there is provided an electro-acoustic transducer device comprising a first electrode formed on top of, or inside a substrate, a thin film using silicon or a silicon compound as a base material thereof, provided on top of the substrate, a second electrode formed on top of, or inside the thin film, a void layer provided between the first electrode and the second electrode, a charge-stored layer for storing charge given by the first electrode and the second electrode, provided between the first electrode and the second electrode, and a source electrode and a drain electrode, for measuring a quantity of electricity stored in the charge-storage layer.

摘要翻译： 在半导体膜式电声换能器装置中，由于在电极之间提供电荷存储层，所以不需要施加直流偏置电压，电 - 机转换效率由于时间上的变化而发生变化 由于电荷泄漏而导致的储存电力等。 对于由作为基本单元的电声换能器构成的超声波阵列换能器提供的信号接收的灵敏度，由于机电转换效率的漂移，主光束的灵敏度不但会发生漂移， 导致声S / N比的恶化，超声波束的方向性劣化。 为了解决这些问题，提供了一种电声换能器装置，其包括在基板之上或之内形成的第一电极，使用硅或硅化合物作为其基材的薄膜，其设置在 基板，形成在薄膜的上面或内部的第二电极，设置在第一电极和第二电极之间的空隙层，用于存储由第一电极和第二电极给出的电荷的电荷存储层， 第一电极和第二电极以及源电极和漏电极，用于测量存储在电荷存储层中的电量。

公开(公告)号：US20070134835A1

公开(公告)日：2007-06-14

申请号：US11566952

申请日：2006-12-05

申请人： Hiroshi Fukuda ,  Toshiyuki Mine

发明人： Hiroshi Fukuda ,  Toshiyuki Mine

IPC分类号： H01L21/00 ,  H01L29/84

CPC分类号： H01H59/0009 ,  G02B6/357 ,  G02B6/358 ,  G02B6/3584 ,  H01H2001/0042 ,  H01H2001/0063

摘要： A MEMS switch is provided with a substrate, a diaphragm which is disposed on the substrate with interposing a cavity therebetween and is elastically deformed by electrostatic force, a switch drive electrode disposed on the substrate, and a switch drive electrode disposed on the diaphragm. Further, a charge accumulation electrode is disposed on the diaphragm between the switch drive electrode and the switch drive electrode. When charge is accumulated in the charge accumulation electrode, electrostatic force is generated between the charge accumulation electrode and the switch drive electrode, thereby deforming the diaphragm. Accordingly, a small-sized bistable MEMS switch whose structure is simple, whose holding state is stable for a long period, and which can be easily mounted together with a semiconductor integrated circuit can be realized.

摘要翻译： MEMS开关设置有基板，隔膜，其设置在基板上，在其间插入空腔并且通过静电力弹性变形，设置在基板上的开关驱动电极和设置在隔膜上的开关驱动电极。 此外，电荷累积电极设置在开关驱动电极和开关驱动电极之间的隔膜上。 当在电荷累积电极中积累电荷时，在电荷累积电极和开关驱动电极之间产生静电力，从而使隔膜变形。 因此，可以实现其结构简单，其保持状态长时间稳定并且可以容易地与半导体集成电路一起安装的小尺寸双稳态MEMS开关。

公开(公告)号：US20120211718A1

公开(公告)日：2012-08-23

申请号：US13440225

申请日：2012-04-05

申请人： AKIO SHIMA ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Toshiyuki Mine ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Satoru Hanzawa

发明人： AKIO SHIMA ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Toshiyuki Mine ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Satoru Hanzawa

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory.

摘要翻译： 提供了能够进一步减小存储单元的尺寸并增加存储容量的半导体存储装置。 每个包括形成在半导体衬底上的晶体管的多个存储单元以及具有由电压供应改变并连接在晶体管的源极和漏极端子之间的电阻值的可变电阻器件被纵向排列成阵列以配置三维存储器 单元格阵列。 存储单元结构具有双通道结构，其中开关晶体管的内部填充有可变电阻元件，特别是相变材料。 通过施加电压来切换开关晶体管，以增加沟道电阻，使得电流在内部相变材料中流动以操作存储器。

公开(公告)号：US08125012B2

公开(公告)日：2012-02-28

申请号：US11639134

申请日：2006-12-15

申请人： Toshiyuki Mine ,  Kan Yasui ,  Tetsuya Ishimaru ,  Yasuhiro Shimamoto

发明人： Toshiyuki Mine ,  Kan Yasui ,  Tetsuya Ishimaru ,  Yasuhiro Shimamoto

IPC分类号： H01L21/336 ,  H01L21/31

CPC分类号： H01L29/42344 ,  H01L29/512 ,  H01L29/513 ,  H01L29/792 ,  Y10S438/954

摘要： Performance of a non-volatile semiconductor storage device which performs electron writing by hot electrons and hole erasure by hot holes is improved. A non-volatile memory cell which performs a writing operation by electrons and an erasure operation by holes has a p-type well region, isolation regions, a source region, and a drain region provided on an Si substrate. A control gate electrode is formed via a gate insulating film between the source region and the drain region. In a left-side side wall of the control gate electrode, a bottom Si oxide film, an electric charge holding film, a top Si oxide film, and a memory gate electrode are formed. The electric charge holding film is formed from an Si nitride film stoichiometrically excessively containing silicon.

摘要翻译： 通过热电子进行电子写入和通过热孔进行空穴擦除的非易失性半导体存储装置的性能得到改善。 通过电子执行写入操作和通过空穴的擦除操作的非易失性存储单元具有设置在Si衬底上的p型阱区域，隔离区域，源极区域和漏极区域。 通过栅极绝缘膜在源极区域和漏极区域之间形成控制栅电极。 在控制栅电极的左侧壁形成有底部的氧化硅膜，电荷保持膜，顶部氧化物膜和存储栅电极。 电荷保持膜由化学计量过度地含有硅的氮化硅膜形成。

公开(公告)号：US07863134B2

公开(公告)日：2011-01-04

申请号：US12695271

申请日：2010-01-28

申请人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

发明人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

IPC分类号： H01L21/336

CPC分类号： H01L29/4234 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/792

摘要： A charge holding insulating film in a memory cell is constituted by a laminated film composed of a bottom insulating film, a charge storage film, and a top insulating film on a semiconductor substrate. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atom % or more is formed on the upper surface side in the bottom insulating film. The thickness of the nitride region is set to 0.5 nm or more and 1.5 nm or less, and the peak value of nitrogen concentration is set to 5 atom % or more and 40 atom % or less, and a position of the peak value of nitrogen concentration is set within 2 nm from the upper surface of the bottom insulating film, thereby suppressing an interaction between the bottom insulating film and the charge storage film.

摘要翻译： 存储单元中的电荷保持绝缘膜由半导体衬底上的底部绝缘膜，电荷存储膜和顶部绝缘膜构成的层叠膜构成。 此外，通过对底部绝缘膜进行等离子体氮化处理，在底部绝缘膜的上表面侧形成氮浓度为1原子％以上的氮化物区域。 将氮化物区域的厚度设定为0.5nm以上至1.5nm以下，将氮浓度的峰值设定为5原子％以上且40原子％以下，将氮的峰值的位置 浓度从底部绝缘膜的上表面设定在2nm以内，从而抑制底部绝缘膜与电荷存储膜之间的相互作用。