公开(公告)号：US20220359582A1

公开(公告)日：2022-11-10

申请号：US17333040

申请日：2021-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction.

公开(公告)号：US20170012079A1

公开(公告)日：2017-01-12

申请号：US15273660

申请日：2016-09-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/0243 ,  H01L21/324 ,  H01L21/3247 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14698

Abstract: A method for manufacturing a BSI image sensor includes following steps: A substrate is provided. The substrate includes a front side and a back side opposite to the front side. The substrate further includes a plurality of isolation structures and a plurality of sensing elements formed therein. Next, the isolation structures are exposed from the back side of the substrate. Subsequently, a thermal treatment is performed to the back side of the substrate to form a plurality of cambered surfaces on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.

Abstract translation: 一种制造BSI图像传感器的方法包括以下步骤：提供基板。 基板包括与前侧相对的前侧和后侧。 基板还包括多个隔离结构和形成在其中的多个感测元件。 接下来，隔离结构从基板的背面露出。 随后，对基板的背侧进行热处理，以在基板的背面上形成多个弧形表面。 弧形表面分别对应于传感元件形成。

公开(公告)号：US12262564B2

公开(公告)日：2025-03-25

申请号：US18676451

申请日：2024-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction. The infrared light detection structure includes an epitaxial structure disposed in the semiconductor substrate, and the visible light detection structure includes a doped region including a material identical to a material of the semiconductor substrate.

公开(公告)号：US11776979B2

公开(公告)日：2023-10-03

申请号：US16802965

申请日：2020-02-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216 ,  G02B5/30 ,  G02B3/00

CPC classification number: H01L27/14625 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02327 ,  G02B3/0006 ,  G02B5/3025 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14629 ,  H01L31/02162

Abstract: A photosensitive device includes a semiconductor substrate and a photodiode. The semiconductor substrate has a patterned semiconductor polarizer having a semiconductor surface. The photodiode is in the semiconductor substrate.

公开(公告)号：US20190081092A1

公开(公告)日：2019-03-14

申请号：US16191445

申请日：2018-11-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

Abstract: A method for fabricating an image sensor is disclosed. A substrate having a frontside surface and a backside surface is provided. A plurality of photoelectric transducer elements is disposed on the frontside surface. A dielectric isolation structure extends into the substrate from the frontside surface so as to isolate the plurality of photoelectric transducer elements from one another. The dielectric isolation structure is recess etched from the backside surface so as to form a recessed trench region in the backside surface. A grid material layer is deposited on the backside surface. The recessed trench region is completely filled with the grid material layer. The grid material layer is subjected to a lithographic process and an etching process so as to form a grid structure on the backside surface.