公开(公告)号：US20210119110A1

公开(公告)日：2021-04-22

申请号：US16656304

申请日：2019-10-17

Applicant: United Microelectronics Corp.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A cell structure of magnetoresistive RAM includes a synthetic anti-ferromagnetic (SAF) layer to serve as a pinned layer; a barrier layer, disposed on the SAF layer; and a magnetic free layer, disposed on the barrier layer. The SAF layer includes: a first magnetic layer; a second magnetic layer; and a spacer layer of a first metal element sandwiched between the first magnetic layer and the second magnetic layer. The first metal element is phase separated from a second metal element of the first magnetic layer and the second magnetic layer interfacing with the spacer layer.

公开(公告)号：US10978339B2

公开(公告)日：2021-04-13

申请号：US16011615

申请日：2018-06-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.

公开(公告)号：US20210050511A1

公开(公告)日：2021-02-18

申请号：US16563924

申请日：2019-09-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Tai-Cheng Hou ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a magnetic tunneling junction (MTJ) on the metal interconnection; forming a top electrode on the MTJ; and forming a trapping layer on the top electrode for trapping hydrogen. Preferably, the trapping layer includes a concentration gradient, in which a concentration of hydrogen decreases from a top surface of the top electrode toward the MTJ.

公开(公告)号：US10692758B1

公开(公告)日：2020-06-23

申请号：US16212362

申请日：2018-12-06

Applicant: United Microelectronics Corp.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Chich-Neng Chang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.

公开(公告)号：US20250072075A1

公开(公告)日：2025-02-27

申请号：US18946839

申请日：2024-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chung-Yi Chiu

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A compound semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a passivation layer on the barrier layer, and a contact area recessed into the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. Abi-layer silicide film is disposed on the contact area. A copper contact is disposed on the bi-layer silicide film

公开(公告)号：US20250062222A1

公开(公告)日：2025-02-20

申请号：US18379668

申请日：2023-10-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tai-Cheng Hou ,  Da-Jun Lin ,  Fu-Yu Tsai ,  Bin-Siang Tsai

IPC: H01L23/522 ,  H01L21/768

Abstract: The present disclosure is related to a semiconductor device and a fabricating method thereof, and the semiconductor device includes a first dielectric layer and a first conductive structure. The first dielectric layer includes a stacked structure including a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%. The first conductive structure is disposed in the first dielectric layer.

公开(公告)号：US20250017022A1

公开(公告)日：2025-01-09

申请号：US18888142

申请日：2024-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Yi-AN Shih ,  Bin-Siang Tsai ,  Fu-Yu Tsai

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/80

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a top electrode on the MTJ, forming an inter-metal dielectric (IMD) layer around the top electrode and the MTJ, forming a landing layer on the IMD layer and the MTJ, and then patterning the landing layer to form a landing pad. Preferably, the landing pad is disposed on the top electrode and the IMD layer adjacent to one side of the top electrode.

公开(公告)号：US20240243057A1

公开(公告)日：2024-07-18

申请号：US18124591

申请日：2023-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Fu-Yu Tsai

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/00 ,  H01L27/08

CPC classification number: H01L23/5223 ,  H01L21/76805 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/11 ,  H01L27/0805 ,  H01L2224/05026 ,  H01L2224/116 ,  H01L2924/19041 ,  H01L2924/30105

Abstract: An integrated circuit includes a substrate, an interconnection layer, an insulation layer, a metal bump structure, and a metal-insulator-metal capacitor. The interconnection layer is disposed above the substrate. The interconnection layer includes an interlayer dielectric layer and an interconnection structure disposed in the interlayer dielectric layer. The insulation layer is disposed on the interconnection layer, the metal bump structure is disposed on the insulation layer, and the metal-insulator-metal capacitor is disposed conformally on the metal bump structure and the insulation layer. A manufacturing method of the integrated circuit includes the following steps.
The interconnection layer is formed above the substrate. The insulation layer is formed on the interconnection layer, the metal bump structure is formed on the insulation layer, and the metal-insulator-metal capacitor is formed conformally on the metal bump structure and the insulation layer.

公开(公告)号：US20240081154A1

公开(公告)日：2024-03-07

申请号：US18504176

申请日：2023-11-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tai-Cheng Hou ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Da-Jun Lin ,  Chau-Chung Hou ,  Wei-Xin Gao

IPC: H10N50/01 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10B61/00 ,  H10N50/80

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.

公开(公告)号：US20240032433A1

公开(公告)日：2024-01-25

申请号：US18376820

申请日：2023-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Tai-Cheng Hou ,  Bin-Siang Tsai ,  Ting-An Chien

IPC: H10N50/01 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10B61/00 ,  H10N50/80

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a top electrode on the MTJ, a trapping layer in the top electrode for trapping hydrogen, a first inter-metal dielectric (IMD) layer on the MTJ, and a first metal interconnection in the first IMD layer and on the top electrode. Preferably, a top surface of the trapping layer is lower than a bottom surface of the first IMD layer.