公开(公告)号：US09429573B2

公开(公告)日：2016-08-30

申请号：US14337856

申请日：2014-07-22

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Barbara Jane Sheppard ,  Yu-Lin Wang ,  Fan Ren ,  Stephen John Pearton

IPC: G01N27/414 ,  G01N33/569

CPC classification number: G01N33/56905 ,  G01N27/414 ,  G01N27/4145 ,  Y02A50/52

Abstract: Embodiments of the present invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.

Abstract translation: 本发明的实施方案提供用于海洋或淡水病原体感测的抗体功能化的高电子迁移率晶体管（HEMT）装置。 在一个实施方案中，海洋病原体可以是牛皮癣菌（Perkinsus marinus）。 感测单元可以包括在HEMT上制造的无线发射器。 感测单元允许在不直接进入电源插座的地区进行测试，并可以使用无线发射器将测试结果发送到中央位置。 根据实施例，可以在几秒钟内实现测试结果。

公开(公告)号：US20140339700A1

公开(公告)日：2014-11-20

申请号：US14367637

申请日：2012-12-18

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Fan Ren ,  Stephen John Pearton ,  Jihyun Kim ,  Hong-Yeol Kim

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L23/53276 ,  H01L21/28562 ,  H01L21/7685 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03003 ,  H01L2224/03334 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/051 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05193 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01327 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01022 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/00

Abstract: Contacts for semiconductor devices are formed where a barrier layer comprising graphene is situated between a first layer comprising a conductor, and a second layer comprising a second conductor or a semiconductor. For example, a metal layer can be formed on a graphene layer residing on a semiconductor. The barrier layer can be directly formed on some second layers, for example, graphene can be transferred from an organic polymer/graphene bilayer structure and the organic polymer removed and replaced with a metal or other conductor that comprises the first layer of the contact. The bilayer can be formed by CVD deposition on a metallic second layer, or the graphene can be formed on a template layer, for example, a metal layer, and bound by a binding layer comprising an organic polymer to form an organic polymer/graphene/metal trilayer structure. The template layer can be removed to yield the bilayer structure. Contacts with the graphene barrier layer display enhanced reliability as the graphene layer inhibits diffusion and reaction between the layers contacting the barrier layer.

Abstract translation: 形成用于半导体器件的触点，其中包括石墨烯的阻挡层位于包括导体的第一层之间，以及包括第二导体或半导体的第二层。 例如，可以在驻留在半导体上的石墨烯层上形成金属层。 阻挡层可以直接形成在一些第二层上，例如，石墨烯可以从有机聚合物/石墨烯双层结构转移，并且有机聚合物被去除并用包含第一层接触的金属或其它导体代替。 可以通过CVD沉积在金属第二层上形成双层，或者可以在模板层（例如金属层）上形成石墨烯，并且通过包含有机聚合物的结合层结合以形成有机聚合物/石墨烯/ 金属三层结构。 可以除去模板层以产生双层结构。 与石墨烯阻挡层的接触显示增强的可靠性，因为石墨烯层抑制了与阻挡层接触的层之间的扩散和反应。