-
公开(公告)号：US20070291816A1
公开(公告)日：2007-12-20
申请号：US11894453
申请日：2007-08-21
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
IPC分类号： G01K15/00
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
-
12.发明授权Apparatus for growing epitaxial layers on wafers by chemical vapor deposition 失效用于通过化学气相沉积在晶片上生长外延层的装置公开(公告)号：US06547876B2
公开(公告)日：2003-04-15
申请号：US09778869
申请日：2001-02-07
申请人： Ian Ferguson , Alexander Gurary , Michael Spencer
发明人： Ian Ferguson , Alexander Gurary , Michael Spencer
IPC分类号： C30B2512
CPC分类号： C30B25/10 , C30B25/12 , Y10T117/10
摘要： The invention describes an apparatus for chemical vapor deposition on substrates, a related method of deposition of epitaxial layers on the wafers and an assemblage for use therewith. In the apparatus of the invention, the wafers are placed directly on the surface of a heating filament. The apparatus of the invention may include a reaction chamber, a rotatable spindle, a plurality of rotatable electrodes mounted on the spindle for rotation together with the spindle and a heating filament in electrical contact with the rotatable electrodes. The heating filament may be rotated by rotating the rotatable electrodes, and heated by providing electric current to the electrodes. In one embodiment of the invention, heating filament may be detached from the rotatable electrodes to load or unload the wafers. Preferably, the heating filament is transported between a deposition position and a loading position. Alternatively, the heating filament is permanently mounted on the electrodes.
摘要翻译： 本发明描述了用于在衬底上进行化学气相沉积的装置，在晶片上沉积外延层的相关方法以及与其一起使用的组合件。 在本发明的装置中，将晶片直接放置在加热丝的表面上。本发明的装置可以包括反应室，可旋转主轴，多个可旋转电极，安装在主轴上以与主轴一起旋转 以及与可旋转电极电接触的加热丝。 可以通过旋转可旋转电极来旋转加热丝，并且通过向电极提供电流来加热加热丝。 在本发明的一个实施例中，加热丝可以从可旋转的电极分离以加载或卸载晶片。 优选地，加热丝在沉积位置和装载位置之间传送。 或者，加热丝被永久地安装在电极上。
-
公开(公告)号：US20120272892A1
公开(公告)日：2012-11-01
申请号：US13441531
申请日：2012-04-06
申请人： Ajit Paranjpe , Alexander Gurary , William Quinn
发明人： Ajit Paranjpe , Alexander Gurary , William Quinn
摘要： A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.
摘要翻译： 通过提供温度控制在0.5℃以内，通过新型的反应器成型，独特的晶片运动结构，热控制系统的改进，气流结构的改进，改进的气体应用方法和 温度和改进的控制系统，用于检测和减少过程变化。
-
公开(公告)号：US20120058630A1
公开(公告)日：2012-03-08
申请号：US12877775
申请日：2010-09-08
申请人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
发明人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.
摘要翻译： 线性簇沉积系统包括以线性水平布置定位的多个反应室。 第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。 具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。 基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。 选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。
-
公开(公告)号：US20060171442A1
公开(公告)日：2006-08-03
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
-
公开(公告)号：US07275861B2
公开(公告)日：2007-10-02
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
-
公开(公告)号：US5544618A
公开(公告)日：1996-08-13
申请号：US247659
申请日：1994-05-23
CPC分类号： C23C16/45512 , C23C14/243 , C23C16/4551 , C23C16/45591 , C30B25/14
摘要： An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.
摘要翻译： 用于在衬底上沉积涂层的装置基本上通过产生加热的曲折路径来消除椭圆形缺陷的发生，通过该曲折路径，源材料蒸气在沉积在衬底上之前必须行进。 此外，用于每个源材料的截止阀位于反应室中紧邻基板，从而使不同组成的层能够在相邻层之间沉积有明显的过渡。 该装置可以用于有效地涂覆大面积均匀，并且与元素或化学源材料或两者的某些组合一样良好地工作。 涂覆装置的特征可以体现在用于在常规分子束和化学束外延单元中进行改装的替换源电池中。
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.017 秒)
