公开(公告)号：US20160204044A1

公开(公告)日：2016-07-14

申请号：US15077283

申请日：2016-03-22

Applicant: Veeco Instruments Inc.

Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

Abstract translation: 晶片处理工艺和设备设置有晶片载体，其布置成保持晶片并将填充气体注入到晶片和晶片载体之间的间隙中。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

公开(公告)号：US20140352619A1

公开(公告)日：2014-12-04

申请号：US14463993

申请日：2014-08-20

Applicant: Veeco Instruments Inc.

Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC: C23C16/458

CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract translation: 化学气相沉积反应器及方法。 诸如包括III族金属源和V族金属源的气体的反应性气体被引入到旋转圆盘式反应器中并且被向下引导到晶片载体和基板上，所述晶片载体和基板保持在升高的基板温度，通常高于约400° 通常约700-1100℃以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃，最优选约100℃-250℃的入口温度下被引入反应器中。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。