公开(公告)号：US11955334B2

公开(公告)日：2024-04-09

申请号：US17129744

申请日：2020-12-21

申请人： AZUR SPACE SOLAR POWER GMBH

发明人： Gregor Keller ,  Clemens Waechter ,  Thorsten Wierzkowski

IPC分类号： H01L21/02 ,  C23C16/30 ,  C30B25/14 ,  C30B29/42 ,  H01L29/06

CPC分类号： H01L21/02579 ,  C23C16/301 ,  C30B25/14 ,  C30B29/42 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/06

摘要： A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from a p-doping to an n-doping on a surface of a substrate or a preceding layer from the vapor phase from an epitaxial gas flow, at least one first precursor for an element of main group III, and at least one second precursor for an element of main group V. When a first growth height is reached, a first initial doping level is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, and subsequently, by stepwise or continuously changing the ratio of the first mass flow to the second mass flow and by stepwise or continuously increasing a mass flow of a third precursor for an n-type dopant in the epitaxial gas flow.

公开(公告)号：US20240105450A1

公开(公告)日：2024-03-28

申请号：US18090766

申请日：2022-12-29

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Yoganand Saripalli ,  Russell Fields ,  Brian Goodlin ,  Qhalid Fareed

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/44 ,  C30B25/08 ,  C30B29/40 ,  H01J37/32

CPC分类号： H01L21/02661 ,  C23C16/301 ,  C23C16/4405 ,  C30B25/08 ,  C30B29/40 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01J37/32816 ,  H01J2237/332

摘要： A Group III-V semiconductor device and a method of fabricating the same including an in-situ surface passivation layer. A two-stage cleaning process may be effectuated for cleaning a reactor chamber prior to growing one or more epitaxial layers and forming subsequent surface passivation layers, wherein a first cleaning process may involve a remotely generated plasma containing fluorine-based reactive species for removing SiXNY residual material accumulated in the reactor chamber and/or over any components disposed therein.

公开(公告)号：US10060030B2

公开(公告)日：2018-08-28

申请号：US15160556

申请日：2016-05-20

申请人： Ceres Technologies, Inc.

发明人： Egbert Woelk ,  Ronald L. DiCarlo

IPC分类号： C23C16/455 ,  C23C14/24 ,  C23C14/54 ,  C23C16/448 ,  C30B23/00 ,  C30B25/14 ,  C23C16/30 ,  C23C14/06

CPC分类号： C23C16/455 ,  C23C14/0617 ,  C23C14/0629 ,  C23C14/243 ,  C23C14/54 ,  C23C16/301 ,  C23C16/306 ,  C23C16/4482 ,  C30B23/00 ,  C30B25/14

摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

公开(公告)号：US09758261B1

公开(公告)日：2017-09-12

申请号：US14597566

申请日：2015-01-15

申请人： SolAero Technologies Corp.

发明人： Jeffrey Steinfeldt

IPC分类号： B64G1/44 ,  H01L31/041 ,  H01L31/0725 ,  C23C16/30 ,  H01L31/0735 ,  H01L31/18

CPC分类号： B64G1/443 ,  C23C16/301 ,  H01L31/041 ,  H01L31/048 ,  H01L31/0508 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544

摘要： A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

公开(公告)号：US09695201B2

公开(公告)日：2017-07-04

申请号：US14358069

申请日：2012-11-28

申请人： Umicore AG. & Co. KG

发明人： Ralf Karch ,  Andreas Rivas-Nass ,  Annika Frey ,  Tobias Burkert ,  Eileen Woerner ,  Angelino Doppiu

IPC分类号： C07F7/00 ,  C23C16/00 ,  C07F5/00 ,  C23C16/30 ,  C23C16/18

CPC分类号： C07F5/00 ,  C23C16/18 ,  C23C16/301 ,  Y02P20/582

摘要： The invention relates to a process for preparing trialkylmetal compounds of the general formula R3M (where M=metal of group IIIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R=C1-C5-alkyl, preferably methyl or ethyl).The process is based on the reaction of metal trichloride (MeCl3) with alkylaluminium sesquichloride (R3Al2Cl3) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120° C. and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350° C. and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process.The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.

公开(公告)号：US09587312B2

公开(公告)日：2017-03-07

申请号：US14232246

申请日：2012-07-05

申请人： Hugo Silva ,  Nico Jouault ,  Victor Saywell ,  Fred Crawley ,  Martin Dauelsberg ,  Johannes Lindner

发明人： Hugo Silva ,  Nico Jouault ,  Victor Saywell ,  Fred Crawley ,  Martin Dauelsberg ,  Johannes Lindner

IPC分类号： C23C16/455 ,  C23C16/30 ,  C30B25/14

CPC分类号： C23C16/45591 ,  C23C16/301 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45576 ,  C30B25/14

摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口 的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。 冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。 气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热 出口板。

公开(公告)号：US20160265113A1

公开(公告)日：2016-09-15

申请号：US15160556

申请日：2016-05-20

申请人： Rohm and Haas Electronic Materials LLC

发明人： Egbert WOELK ,  Ronald L. DiCARLO

IPC分类号： C23C16/52 ,  C23C16/455

CPC分类号： C23C16/455 ,  C23C14/0617 ,  C23C14/0629 ,  C23C14/243 ,  C23C14/54 ,  C23C16/301 ,  C23C16/306 ,  C23C16/4482 ,  C30B23/00 ,  C30B25/14

摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

公开(公告)号：US09053935B2

公开(公告)日：2015-06-09

申请号：US14533650

申请日：2014-11-05

申请人： Veeco Instruments Inc.

发明人： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/205

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

公开(公告)号：US08937000B2

公开(公告)日：2015-01-20

申请号：US13128163

申请日：2009-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/469 ,  C23C16/455 ,  C23C16/30 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US20140287141A1

公开(公告)日：2014-09-25

申请号：US14358069

申请日：2012-11-28

申请人： Umicore AG. & Co. KG

发明人： Ralf Karch ,  Andreas Rivas-Nass ,  Annika Frey ,  Tobias Burkert ,  Eileen Woerner ,  Angelino Doppiu

IPC分类号： C07F5/00 ,  C23C16/18

CPC分类号： C07F5/00 ,  C23C16/18 ,  C23C16/301 ,  Y02P20/582

摘要： The invention relates to a process for preparing trialkylmetal compounds of the general formula R3M (where M=metal of group IIIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R═C1-C5-alkyl, preferably methyl or ethyl).The process is based on the reaction of metal trichloride (MeCl3) with alkylaluminium sesquichloride (R3Al2Cl3) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120° C. and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350° C. and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process.The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.

摘要翻译： 本发明涉及一种制备通式R3M的三烷基金属化合物的方法（其中M =元素周期表（PTE）的IIIA族金属，优选镓或铟，R = C1-C5-烷基，优选甲基 或乙基）。 该方法基于金属三氯化物（MeCl 3）与烷基铝倍半氯化物（R3Al2Cl3）在至少一种碱金属卤化物作为辅助碱的存在下的反应。 将反应混合物加热至高于120℃的温度，通过分离器将三烷基金属化合物从反应混合物中分离出来，部分烷基化产物同时再循环至反应混合物。 在另外的步骤中，将反应混合物加热至最高350℃，剩余的烷基化和部分烷基化产物被分离出来。 以这种方式获得的产品可以任选地在该过程中循环使用。 该方法显示出高产率的三烷基金属化合物以及高的金属利用率; 该产品用作MOCVD工艺的前体。