公开(公告)号：US06853942B2

公开(公告)日：2005-02-08

申请号：US10213485

申请日：2002-08-06

申请人： Emmanuel Drege ,  Junwei Bao ,  Srinivas Doddi ,  Vi Vuong

发明人： Emmanuel Drege ,  Junwei Bao ,  Srinivas Doddi ,  Vi Vuong

IPC分类号： G01N21/956 ,  G06F19/00 ,  G01B9/02 ,  G01B11/24 ,  G06K9/46

CPC分类号： G03F7/70516 ,  G01N21/956 ,  G03F7/70625

摘要： To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.

摘要翻译： 为了产生用于半导体结构的光学测量的系数集合，获得用于一组参数的至少三个光学测量信号。 光学测量信号指示从半导体结构衍射的光，并且改变该组参数中的至少一个参数的值以产生每个信号。 获得至少三个光学测量信号之间的功能关系，所述功能关系包括至少三个系数值。 确定来自功能关系的至少三个系数值的至少三组系数。

公开(公告)号：US06842261B2

公开(公告)日：2005-01-11

申请号：US10228692

申请日：2002-08-26

申请人： Junwei Bao ,  Wen Jin ,  Emmanuel Drege ,  Srinivas Doddi ,  Vi Vuong

发明人： Junwei Bao ,  Wen Jin ,  Emmanuel Drege ,  Srinivas Doddi ,  Vi Vuong

IPC分类号： G01B11/02 ,  G01N21/47 ,  G01N21/88 ,  G06F19/00 ,  H01L21/00

CPC分类号： G01N21/4788 ,  G03F7/70625

摘要： A profile parameter value is determined in integrated circuit metrology by: a) determining a diffraction signal difference based on a measured diffraction signal and a previously generated diffraction signal; b) determining a first profile parameter value based on the previously generated diffraction signal; c) determining a first profile parameter value change based on the diffraction signal difference; d) determining a second profile parameter value based on the first profile parameter value change; e) determining a second profile parameter value change between the first and second profile parameter values; f) determining if the second profile parameter value change meets one or more preset criteria; and g) when the second profile parameter value change fails to meet the one or more preset criteria, iterating c) to g) using as the diffraction signal difference in the iteration of step c), a diffraction signal difference determined based on the measured diffraction signal and a diffraction signal for the second profile parameter value previously determined in step d), and as the first profile parameter value in the iteration of step e), the second profile parameter value previously determined in step d).

摘要翻译： 在集成电路测量中通过以下方式确定轮廓参数值：a）基于测量的衍射信号和先前产生的衍射信号来确定衍射信号差; b）基于先前产生的衍射信号确定第一轮廓参数值; c）基于所述衍射信号差确定第一轮廓参数值变化; d）基于所述第一轮廓参数值变化来确定第二轮廓参数值; e）确定所述第一和第二轮廓参数值之间的第二轮廓参数值变化; f）确定第二轮廓参数值变化是否满足一个或多个预设标准; 并且g）当第二轮廓参数值改变不能满足一个或多个预设标准时，迭代c）至g）在步骤c）的迭代中使用作为衍射信号差的衍射信号差，基于测得的衍射 信号和用于在步骤d）中预先确定的第二轮廓参数值的衍射信号，以及作为步骤e）的迭代中的第一轮廓参数值，在步骤d）中预先确定的第二轮廓参数值。

公开(公告)号：US07523076B2

公开(公告)日：2009-04-21

申请号：US10791046

申请日：2004-03-01

申请人： Emmanuel Drege ,  Srinivas Doddi ,  Junwei Bao

发明人： Emmanuel Drege ,  Srinivas Doddi ,  Junwei Bao

IPC分类号： G06F15/18

CPC分类号： G06N99/005 ,  G03F7/70625

摘要： A profile model can be selected for use in examining a structure formed on a semiconductor wafer using optical metrology by obtaining an initial profile model having a set of profile parameters. A machine learning system is trained using the initial profile model. A simulated diffraction signal is generated for an optimized profile model using the trained machine learning system, where the optimized profile model has a set of profile parameters with the same or fewer profile parameters than the initial profile model. A determination is made as to whether the one or more termination criteria are met. If the one or more termination criteria are met, the optimized profile model is modified and another simulated diffraction signal is generated using the same trained machine learning system.

摘要翻译： 可以通过获得具有一组轮廓参数的初始轮廓模型来选择轮廓模型用于检查在半导体晶片上形成的结构。 使用初始轮廓模型训练机器学习系统。 使用训练的机器学习系统为优化的轮廓模型生成模拟衍射信号，其中优化的轮廓模型具有与初始轮廓模型相同或更少的轮廓参数的一组轮廓参数。 确定是否满足一个或多个终止标准。 如果满足一个或多个终止标准，则优化的轮廓模型被修改，并且使用相同训练的机器学习系统产生另一个模拟衍射信号。

公开(公告)号：US20050192914A1

公开(公告)日：2005-09-01

申请号：US10791046

申请日：2004-03-01

申请人： Emmanuel Drege ,  Srinivas Doddi ,  Junwei Bao

发明人： Emmanuel Drege ,  Srinivas Doddi ,  Junwei Bao

IPC分类号： G06F15/18

CPC分类号： G06N99/005 ,  G03F7/70625

摘要： A profile model can be selected for use in examining a structure formed on a semiconductor wafer using optical metrology by obtaining an initial profile model having a set of profile parameters. A machine learning system is trained using the initial profile model. A simulated diffraction signal is generated for an optimized profile model using the trained machine learning system, where the optimized profile model has a set of profile parameters with the same or fewer profile parameters than the initial profile model. A determination is made as to whether the one or more termination criteria are met. If the one or more termination criteria are met, the optimized profile model is modified and another simulated diffraction signal is generated using the same trained machine learning system.

摘要翻译： 可以通过获得具有一组轮廓参数的初始轮廓模型来选择轮廓模型用于检查在半导体晶片上形成的结构。 使用初始轮廓模型训练机器学习系统。 使用训练的机器学习系统为优化的轮廓模型生成模拟衍射信号，其中优化的轮廓模型具有与初始轮廓模型相同或更少的轮廓参数的一组轮廓参数。 确定是否满足一个或多个终止标准。 如果满足一个或多个终止标准，则优化的轮廓模型被修改，并且使用相同训练的机器学习系统产生另一个模拟衍射信号。

公开(公告)号：US07588949B2

公开(公告)日：2009-09-15

申请号：US11699837

申请日：2007-01-29

申请人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

发明人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

IPC分类号： H01L21/00 ,  G06F19/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

摘要翻译： 评估用于测量晶片结构的光学测量模型的优化。 开发了具有度量模型变量的光学测量模型，其包括轮廓模型的轮廓模型参数。 选择计量模型优化的一个或多个目标。 选择要用于评估一个或多个所选目标的一个或多个简档模型参数。 选择要设置为固定值的一个或多个计量模型变量。 一个或多个选定的计量模型变量被设置为固定值。 设置一个或多个所选目标的一个或多个终止标准。 光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。 使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。 然后确定所获得的测量是否满足一个或多个终止标准。

公开(公告)号：US07171284B2

公开(公告)日：2007-01-30

申请号：US10946729

申请日：2004-09-21

申请人： Vi Vuong ,  Emmanuel Drege ,  Shifang Ll ,  Junwei Bao

发明人： Vi Vuong ,  Emmanuel Drege ,  Shifang Ll ,  Junwei Bao

IPC分类号： G06F19/00 ,  H01L21/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

公开(公告)号：US20070135959A1

公开(公告)日：2007-06-14

申请号：US11699837

申请日：2007-01-29

申请人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

发明人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

IPC分类号： G06F19/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

摘要翻译： 评估用于测量晶片结构的光学测量模型的优化。 开发了具有度量模型变量的光学测量模型，其包括轮廓模型的轮廓模型参数。 选择计量模型优化的一个或多个目标。 选择要用于评估一个或多个所选目标的一个或多个简档模型参数。 选择要设置为固定值的一个或多个计量模型变量。 一个或多个选定的计量模型变量被设置为固定值。 设置一个或多个所选目标的一个或多个终止标准。 光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。 使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。 然后确定所获得的测量是否满足一个或多个终止标准。

公开(公告)号：US20060064280A1

公开(公告)日：2006-03-23

申请号：US10946729

申请日：2004-09-21

申请人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

发明人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

IPC分类号： G06F15/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

公开(公告)号：US20100083200A1

公开(公告)日：2010-04-01

申请号：US12242442

申请日：2008-09-30

申请人： Li J. Song ,  Srini Doddi ,  Emmanuel Drege ,  Nickhil Jakatdar

发明人： Li J. Song ,  Srini Doddi ,  Emmanuel Drege ,  Nickhil Jakatdar

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G06F17/5036 ,  G06F17/5068

摘要： Disclosed are a method, a system, and a computer program product for implementing compact manufacturing model during various stages of electronic circuit designs. In some embodiments, the method or the system receives or identifies physics based data. In some embodiments, the method or the system receives or identifies the physics based data for the corresponding manufacturing process by using the golden manufacturing process model. In some embodiments, the method or the system uses the physics based data to fine tune, modify, or adjust the golden manufacturing process model. In some embodiments, the method or the system invokes the just-right module. In some embodiments, the method or the system implements the compact manufacturing model and the correct-by-design module and provides guidelines for the various stages of the electronic circuit design.

摘要翻译： 公开了一种用于在电子电路设计的各个阶段期间实现紧凑的制造模型的方法，系统和计算机程序产品。 在一些实施例中，该方法或系统接收或识别基于物理的数据。 在一些实施例中，该方法或系统通过使用金制造过程模型来接收或识别相应制造过程的基于物理的数据。 在一些实施例中，该方法或系统使用基于物理的数据来微调，修改或调整黄金制造过程模型。 在一些实施例中，该方法或系统调用正确的模块。 在一些实施例中，该方法或系统实现紧凑的制造模型和逐个设计模块，并为电子电路设计的各个阶段提供指导。

公开(公告)号：US08407630B1

公开(公告)日：2013-03-26

申请号：US12644478

申请日：2009-12-22

申请人： Kevin Chan ,  Emmanuel Drege ,  Nickhil Jakatdar ,  Svetlana Litvintseva ,  Mark A. Miller ,  Francis Raquel

发明人： Kevin Chan ,  Emmanuel Drege ,  Nickhil Jakatdar ,  Svetlana Litvintseva ,  Mark A. Miller ,  Francis Raquel

IPC分类号： G06F17/50

CPC分类号： G06F17/5022 ,  G06F17/5031

摘要： A method and apparatus for modeling and cross correlation of design predicted criticalities include a feedback loop where information from the manufacturing process is provided to cross correlation engine for optimization of semiconductor manufacturing. The information may include parametric information, functional information, and hot spots determination. The sharing of information allows for design intent to be reflected in manufacturing metrology space; thus, allowing for more intelligent metrology and reduces cycle time.

摘要翻译： 用于设计预测临界的建模和互相关的方法和装置包括反馈回路，其中来自制造过程的信息被提供给用于优化半导体制造的互相关引擎。 该信息可以包括参数信息，功能信息和热点确定。 信息共享允许设计意图反映在制造计量空间中; 因此，允许更智能的计量和减少循环时间。