公开(公告)号：US08663573B2

公开(公告)日：2014-03-04

申请号：US12929789

申请日：2011-02-16

申请人： Naoya Murakami ,  Wataru Saiki

发明人： Naoya Murakami ,  Wataru Saiki

IPC分类号： A62D3/00 ,  B01J19/00 ,  C01B33/00 ,  C01B33/08

CPC分类号： B01J19/006 ,  B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/00768 ,  B01J2219/185 ,  B01J2219/1943 ,  C01B33/10731

摘要： An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.

摘要翻译： 一种三氯硅烷的制造装置，其特征在于，包括：反应容器，具有大致圆筒形的壁体，顶板和底板，其中通过设置有气体导入通道供给反应容器的原料气体产生反应产物气体， 到圆筒壁体的下部; 以及设置在反应容器内部以加热原料气体的多个加热器，其中每个加热器具有在垂直方向上伸长并且通过带电产生热量的加热元件，以及固定到底板的安装件 并支撑加热元件; 在加热元件的中间高度设置凸缘，使得凸缘布置在气体导入通道的上方并且在水平方向上延伸; 在相邻的加热器之间形成的原料气体的通道被凸缘变窄。

公开(公告)号：US20110274851A1

公开(公告)日：2011-11-10

申请号：US13067015

申请日：2011-05-03

申请人： Takashi Miyazawa ,  Wataru Saiki

发明人： Takashi Miyazawa ,  Wataru Saiki

IPC分类号： C23C16/24 ,  B05D3/14 ,  B05C11/00

CPC分类号： C23C16/24 ,  B01J2219/00085 ,  B01J2219/00094 ,  C01B33/035 ,  C23C16/4411

摘要： An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor, in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus has: a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the cooling medium flows in the cooling path as boiling two-phase flow by controlling the pressure and flow rate of the cooling medium.

摘要翻译： 一种制造多晶硅的装置，其中将含有硅化合物的原料气体引入反应器中，其中向反应器中的硅籽晶棒供应电流以加热硅种子棒，并且其中多晶硅沉积在表面上 的硅种子杆并且生长成棒，该装置具有：钟形瓶，其具有形成反应器的室的周壁和覆盖周壁的护套，并且其中在周壁和外套之间形成的冷却路径 允许包括水的冷却介质流过其中; 冷却剂供给系统，其连接到钟罩，以将冷却介质供给到冷却路径; 冷却剂回收系统，其连接到钟罩，以便从冷却路径回收冷却介质; 压力控制部，控制冷却路径内的压力; 以及流量控制部，其控制所述冷却介质的流量，其中，所述冷却介质通过控制所述冷却介质的压力和流量而以作为沸腾的两相流的冷却路径流动。

公开(公告)号：US20110223074A1

公开(公告)日：2011-09-15

申请号：US13047214

申请日：2011-03-14

申请人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

发明人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

IPC分类号： B01J19/00

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/1928 ,  C01B33/1071

摘要： In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

摘要翻译： 在三氯硅烷的制造装置中，反应室的内部空间沿着圆周方向的第一壁在径向上分隔开，并且沿与圆周方向交叉的方向延伸的第二壁分隔成多个空间。 第一壁和第二壁的上部或下部形成有将原料气体引入循环的连通部，朝向反应室的中心部分，同时原料气体依次通过小空间，并且是 上下放置，加热器安装在小空间中，第二壁两侧的小空间之一用作向上流动通道的小空间，另一个用作向下流动通道的小空间 并且小空间经由第二壁的连通部彼此连通。

公开(公告)号：US09468042B2

公开(公告)日：2016-10-11

申请号：US13064106

申请日：2011-03-07

申请人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

发明人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

IPC分类号： H05B3/02

CPC分类号： H05B3/02

摘要： An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.

摘要翻译： 一种由含有四氯化硅和氢气的原料气体生产三氯硅烷的装置，具有：向反应室供给产生含三氯硅烷和氢气的反应气体的原料气体; 多个加热器，其加热原料气体，并且在反应室中沿垂直方向设置放热部分; 多个电极连接到加热器的基部; 并且辐射板设置在加热器的放热部分之间。

公开(公告)号：US20110215084A1

公开(公告)日：2011-09-08

申请号：US13064106

申请日：2011-03-07

申请人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

发明人： Masami Miyake ,  Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami

IPC分类号： H05B3/02

CPC分类号： H05B3/02

摘要： An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.

摘要翻译： 一种由含有四氯化硅和氢气的原料气体生产三氯硅烷的装置，具有：向反应室供给产生含三氯硅烷和氢气的反应气体的原料气体; 多个加热器，其加热原料气体，并且在反应室中沿垂直方向设置放热部分; 多个电极连接到加热器的基部; 并且辐射板设置在加热器的放热部分之间。