High repetition rate laser produced plasma EUV light source

    公开(公告)号:US20050205810A1

    公开(公告)日:2005-09-22

    申请号:US10803526

    申请日:2004-03-17

    摘要: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

    Laser produced plasma EUV light source
    12.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20060219957A1

    公开(公告)日:2006-10-05

    申请号:US11358992

    申请日:2006-02-21

    IPC分类号: G01J3/10 H05G2/00 A61N5/06

    摘要: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    摘要翻译: 公开了一种EUV光源,其可以包括例如激光源。 CO 2激光器,等离子体室和用于将来自激光源的激光束传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。

    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS
    13.
    发明申请
    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS 有权
    用于保护来自等离子体生物反应器的EUV光源的内部组分的系统

    公开(公告)号:US20060192151A1

    公开(公告)日:2006-08-31

    申请号:US11067099

    申请日:2005-02-25

    IPC分类号: G01J1/00

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Systems and methods for EUV light source metrology
    14.
    发明申请
    Systems and methods for EUV light source metrology 有权
    EUV光源计量系统和方法

    公开(公告)号:US20070008517A1

    公开(公告)日:2007-01-11

    申请号:US11177501

    申请日:2005-07-08

    IPC分类号: G01J1/42

    摘要: Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi-layer mirror.

    摘要翻译: 披露了EUV光源计量系统和方法。 在第一方面,用于测量EUV光源功率输出的系统可以包括沿着EUV光路设置的光电子源材料,以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面,用于测量EUV光强度的系统可以包括多层反射镜,例如Mo / Si,沿着EUV光路径可弃,以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面,离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。

    Alternative fuels for EUV light source
    15.
    发明申请
    Alternative fuels for EUV light source 失效
    EUV光源的替代燃料

    公开(公告)号:US20060249699A1

    公开(公告)日:2006-11-09

    申请号:US11406216

    申请日:2006-04-17

    IPC分类号: G01J3/10

    摘要: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and/or Indium.

    摘要翻译: 公开了一种EUV光源,其可以包括具有表面的至少一个光学元件,例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面,源材料可以基本上由锡化合物组成,并且可以通过沉积在光学元件上的等离子体形成而产生锡屑,此外,锡化合物可以包括有效地从光学蚀刻沉积的锡的元素 元素表面。 锡化合物可以包括SnBr 4,SnBr 2和SnH 4。 另一方面,EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料,源材料包含锡和至少一种其它金属,例如锡与镓和/或铟。

    EUV light source optical elements
    17.
    发明申请
    EUV light source optical elements 有权
    EUV光源光学元件

    公开(公告)号:US20050199830A1

    公开(公告)日:2005-09-15

    申请号:US11021261

    申请日:2004-12-22

    摘要: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

    摘要翻译: 公开了用于形成等离子体产生的EUV光源光学元件的装置和方法,例如,包括使用各种二元层材料的MLM堆叠的反射器和包括用于等离子体产生的EUV光源室中的单个和二进制封盖层的封盖层,特别是在 等离子体源材料与一种或多种MLM材料反应。

    High repetition rate laser produced plasma EUV light source

    公开(公告)号:US20080197297A1

    公开(公告)日:2008-08-21

    申请号:US11471434

    申请日:2006-06-20

    IPC分类号: G01J3/10

    摘要: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

    Collector for EUV light source
    19.
    发明申请

    公开(公告)号:US20070114470A1

    公开(公告)日:2007-05-24

    申请号:US11603732

    申请日:2006-11-21

    申请人: Norbert Bowering

    发明人: Norbert Bowering

    IPC分类号: G01J3/10

    摘要: An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4. The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4.

    Systems for protecting internal components of an EUV light source from plasma-generated debris
    20.
    发明申请
    Systems for protecting internal components of an EUV light source from plasma-generated debris 失效
    用于保护EUV光源的内部部件免受等离子体产生的碎片的系统

    公开(公告)号:US20070029512A1

    公开(公告)日:2007-02-08

    申请号:US11512821

    申请日:2006-08-30

    IPC分类号: G01J3/10

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。