High repetition rate laser produced plasma EUV light source

    公开(公告)号:US20080197297A1

    公开(公告)日:2008-08-21

    申请号:US11471434

    申请日:2006-06-20

    CPC classification number: B82Y10/00 G03F7/70033 H05G2/003 H05G2/008

    Abstract: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

    EUV light source
    3.
    发明申请
    EUV light source 有权
    EUV光源

    公开(公告)号:US20070158596A1

    公开(公告)日:2007-07-12

    申请号:US11647007

    申请日:2006-12-27

    Abstract: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

    Abstract translation: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外(“EUV”)光源多层收集器的装置和方法; 等离子体形成室内的壳体,具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开,并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅,硅,Zerodur或ULE玻璃,铝,铍,钼,铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器,以将壳体的稳态温度维持在所选择的工作温度范围内。

    Collector for EUV light source
    4.
    发明申请

    公开(公告)号:US20070114470A1

    公开(公告)日:2007-05-24

    申请号:US11603732

    申请日:2006-11-21

    Inventor: Norbert Bowering

    Abstract: An apparatus/method may comprise, a multi-layer reflecting coating forming an EUV reflective surface which may comprise an inter-diffusion barrier layer which may comprise a carbide selected from the group ZrC and NbC or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 or a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4. The apparatus and method may comprise an EUV light source collector which may comprise a collecting mirror which may comprise a normal angle of incidence multi-layer reflecting coating; an inter-diffusion barrier layer comprising a material selected from the group comprising a carbide selected from the group ZrC and NbC, or a boride selected from the group ZrB2 and NbB2 or a disilicide selected from the group ZrSi2 and NbSi2 a nitride selected from the group BN, ZrN, NbN, BN, ScN and Si3N4.

    Systems for protecting internal components of an EUV light source from plasma-generated debris
    5.
    发明申请
    Systems for protecting internal components of an EUV light source from plasma-generated debris 失效
    用于保护EUV光源的内部部件免受等离子体产生的碎片的系统

    公开(公告)号:US20070029512A1

    公开(公告)日:2007-02-08

    申请号:US11512821

    申请日:2006-08-30

    Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    Abstract translation: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Systems and methods for EUV light source metrology
    6.
    发明申请
    Systems and methods for EUV light source metrology 有权
    EUV光源计量系统和方法

    公开(公告)号:US20070008517A1

    公开(公告)日:2007-01-11

    申请号:US11177501

    申请日:2005-07-08

    CPC classification number: G03F7/7085 B82Y10/00 G21K2201/061

    Abstract: Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi-layer mirror.

    Abstract translation: 披露了EUV光源计量系统和方法。 在第一方面,用于测量EUV光源功率输出的系统可以包括沿着EUV光路设置的光电子源材料,以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面,用于测量EUV光强度的系统可以包括多层反射镜,例如Mo / Si,沿着EUV光路径可弃,以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面,离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。

    Plasma focus light source with improved pulse power system
    7.
    发明授权
    Plasma focus light source with improved pulse power system 失效
    等离子聚焦光源具有改进的脉冲电源系统

    公开(公告)号:US06815700B2

    公开(公告)日:2004-11-09

    申请号:US10189824

    申请日:2002-07-03

    Abstract: The present invention provides a high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. The chamber contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at voltages high enough to create electrical discharges between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. Preferably the electrodes are configured co-axially. The central electrode is preferably hollow and the active gas is introduced out of the hollow electrode. This permits an optimization of the spectral line source and a separate optimization of the buffer gas. In preferred embodiments the central electrode is pulsed with a high negative electrical pulse so that the central electrode functions as a hollow cathode. Preferred embodiments present optimization of capacitance values, anode length and shape and preferred active gas delivery systems are disclosed. Preferred embodiments also include a pulse power system comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer. Special techniques are described for cooling the central electrode. In one example, water is circulated through the walls of the hollow electrode. In another example, a heat pipe cooling system is described for cooling the central electrode.

    Abstract translation: 本发明提供了一种高能量光子源。 一对等离子体夹紧电极位于真空室中。 该室包含工作气体,其包括贵重缓冲气体和被选择用于提供所需光谱线的活性气体。 脉冲电源在电压足够高的电压下提供电脉冲,以在电极之间产生放电,以在工作气体中产生非常高温度,高密度的等离子体夹持,从而在源或活性气体的光谱线处提供辐射。 优选地,电极被同轴配置。 中心电极优选是中空电极,并且活性气体从中空电极引出。 这允许对光谱线源进行优化和缓冲气体的单独优化。 在优选的实施例中,中心电极用高的负电脉冲脉冲,使得中心电极用作空心阴极。 本发明优选的实施例公开了电容值的优化,阳极长度和形状以及优选的活性气体输送系统。 优选实施例还包括脉冲功率系统,其包括充电电容器和包括脉冲变压器的磁压缩电路。 描述了用于冷却中心电极的特殊技术。 在一个实例中,水通过中空电极的壁循环。 在另一个实例中,描述了用于冷却中心电极的热管冷却系统。

    Laser produced plasma EUV light source
    8.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US08035092B2

    公开(公告)日:2011-10-11

    申请号:US12655987

    申请日:2010-01-11

    Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统,等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件,例如多个远离现场的多层反射镜,以及设置在等离子体和光学元件之间的流动气体,该气体建立足以在该距离上操作的气体压力, d,在离子到达光学器件之前,将离子能量降低到预先选定的值以下。 在一个实施方案中,气体可以包含氢气,并且在一个具体实施方案中,气体可以包含大于50体积%的氢气。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    10.
    发明授权
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US07732793B2

    公开(公告)日:2010-06-08

    申请号:US11705954

    申请日:2007-02-13

    Abstract: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    Abstract translation: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

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