公开(公告)号：US20190035459A1

公开(公告)日：2019-01-31

申请号：US16045749

申请日：2018-07-26

Applicant: Winbond Electronics Corp.

Inventor： Shao-Ching Liao ,  Ping-Kun Wang ,  Ming-Che Lin ,  Min-Chih Wei ,  Chia-Hua Ho ,  Chien-Min Wu

IPC: G11C13/00 ,  H01L45/00

Abstract: A forming method of a resistive memory device is provided. The forming method includes: conducting a forming procedure to apply a forming voltage to the resistive memory device such that the resistive memory device changes from a high resistive state to a low resistive state and measuring a first current of the resistive memory device; performing a thermal step on the resistive memory device and measuring a second current of the resistive memory device; and comparing the second current to the first current and determining to apply a first voltage signal or a second voltage signal to the resistive memory device or to finish the forming procedure according to a comparison result of the first current and the second current. In addition, a memory storage apparatus including a resistive memory device is also provided.

公开(公告)号：US20190006007A1

公开(公告)日：2019-01-03

申请号：US15729676

申请日：2017-10-11

Applicant: Winbond Electronics Corp.

Inventor： Ping-Kun Wang ,  Shao-Ching Liao ,  Ming-Che Lin ,  Min-Chih Wei ,  Chia-Hua Ho ,  Chien-Min Wu

IPC: G11C13/00

Abstract: A resistive memory apparatus and a setting method for a resistive memory cell thereof are provided. The setting method includes: performing a first setting operation on the resistive memory cell, and performing a first verifying operation on the resistive memory cell after the first setting operation is finished; determining whether to perform a first resetting operation on the resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the resistive memory cell after the first resetting operation is determined to be performed and is finished; and determining whether to perform a second resetting operation on the resistive memory cell according to a verifying result of the second verifying operation, and performing a third verifying operation on the resistive memory cell after the second resetting operation is determined to be performed and is finished.

公开(公告)号：US10170184B1

公开(公告)日：2019-01-01

申请号：US15729676

申请日：2017-10-11

Applicant: Winbond Electronics Corp.

Inventor： Ping-Kun Wang ,  Shao-Ching Liao ,  Ming-Che Lin ,  Min-Chih Wei ,  Chia-Hua Ho ,  Chien-Min Wu

IPC: G11C13/00

Abstract: A resistive memory apparatus and a setting method for a resistive memory cell thereof are provided. The setting method includes: performing a first setting operation on the resistive memory cell, and performing a first verifying operation on the resistive memory cell after the first setting operation is finished; determining whether to perform a first resetting operation on the resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the resistive memory cell after the first resetting operation is determined to be performed and is finished; and determining whether to perform a second resetting operation on the resistive memory cell according to a verifying result of the second verifying operation, and performing a third verifying operation on the resistive memory cell after the second resetting operation is determined to be performed and is finished.