公开(公告)号：US20240290847A1

公开(公告)日：2024-08-29

申请号：US18175231

申请日：2023-02-27

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Chris Hardiman ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/408 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7786

Abstract: Semiconductor devices having nitrogen-polar (N-polar) Group III-nitride semiconductor structures are provided. In one example, a semiconductor device may include a nitrogen polar (N-polar) Group III-nitride semiconductor structure. The N-polar Group III-nitride semiconductor structure may have a first surface and a second surface opposing the first surface. The semiconductor device may include an electrode. The semiconductor device may include a low-k dielectric layer located between the first surface of the N-polar Group III-nitride semiconductor structure and at least a portion of the electrode. The low-k dielectric layer may have a dielectric constant of less than about 3.9. In some examples, the N-polar Group III-nitride semiconductor structure may include a trench extending at least partially into one or more cap layers of the N-polar Group III-nitride semiconductor structure.

公开(公告)号：US20240274507A1

公开(公告)日：2024-08-15

申请号：US18168985

申请日：2023-02-14

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Chris Hardiman ,  Scott Sheppard

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/528 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/5283 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

Abstract: Semiconductor devices are provided. In one example, a semiconductor device includes a substrate. The semiconductor device includes a nitrogen-polar (N-polar) Group III-nitride semiconductor structure on the substrate. The semiconductor device includes a via passing through the substrate and the N-polar Group III-nitride semiconductor structure. A cross-sectional profile of the via changes at an interface between the substrate and the N-polar Group III-nitride semiconductor structure.

公开(公告)号：US20240072125A1

公开(公告)日：2024-02-29

申请号：US17893277

申请日：2022-08-23

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Chris Hardiman

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/04 ,  H01L21/285 ,  H01L29/16 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L29/401 ,  H01L21/0217 ,  H01L21/0485 ,  H01L21/28575 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/45 ,  H01L29/452

Abstract: A method of forming ohmic contacts on a semiconductor layer includes forming silicon ohmic contact precursors on the semiconductor layer, depositing a layer of metal on the semiconductor layer including the silicon ohmic contact precursors, reacting the layer of metal with the silicon ohmic contact precursors to form metal silicide ohmic contacts on the semiconductor layer, and selectively removing the layer of metal from the semiconductor layer without removing the metal silicide contacts from the semiconductor layer.